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Recommended methods and standardized reporting practices for electrical characterization of printed and organic transistors are covered. Due to the nature of printed and organic electronics, significant measurement errors can be introduced if the electrical characterization design-of-experiment is not properly addressed. This standard describes the most common sources of measurement error, particularly for high-impedance electrical measurements commonly required for printed and organic transistors. This standard also gives recommended practices in order to minimize and/or characterize the effect of measurement artifacts and other sources of error encountered while measuring printed and organic transistors. Keywords: electrical characterization, FET, flexible electronics, high impedance, nanocomposite, nanotechnology, OFET, organic electronics, organic transistor, printed electronics, printing, transistor.
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This standard deals with the methods of measurement of important characteristics of transistors. In general, these characteristics are referred to as parameters of the devices. Because of the youthfulness of the transistor art, methods of testing transistors will continue to change considerably before the art can be considered to have "stabilized" sufficiently for complete standardization. This standard corresponds to the current state of transistor testing methods, and its publication by the IRE is considered preferable to waiting for a future stabilization of the many rapid changes now characteristic of this field.
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