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As the scaling of electronic semiconductor devices displays signs of saturation, the main focus of research in microelectronics is shifting towards finding new computing paradigms. Electron spin offers additional functionality to digital charge-based devices. Several fundamental problems, including spin injection to a semiconductor, spin propagation and relaxation, and spin manipulation by the gate voltage, have been successfully resolved to open a path towards spin-based reprogrammable electron switches. Devices employing electron spin are nonvolatile; they are able to preserve the stored information without external power. Emerging nonvolatile devices are electrically addressable, possess a simple structure, and offer endurance and speed superior to flash memory. Having nonvolatile memory very close to CMOS offers a prospect of data processing in the nonvolatile segment, where the same devices are used to store and process the information. This opens perspectives for conceptually new low-power computing paradigms within Artificial Intelligence of Things (AIoT). This Special Issue focuses on all topics related to spintronic devices such as spin-based switches, magnetoresistive memories, energy harvesting devices, and sensors that can be employed in in-memory computing concepts and in Artificial Intelligence.
Research & information: general --- Physics --- magnetic contacts --- reliability --- practical tests --- reaction distance --- extreme conditions --- spin-orbit torque MRAM --- reinforcement learning --- two-pulse switching scheme --- magnetic field-free switching --- machine learning --- torque --- the calculation in memory --- automation --- magnetic recording --- magnetic read heads --- current perpendicular-to-the-plane giant magnetoresistance --- Heusler alloys --- bit-patterned media --- exchange-coupled-composite media --- microwave-assisted magnetic recording --- hysteresis loop --- combined spin-transfer torque (STT) and spin-orbit torque (SOT) switching --- field like torque --- damping like torque --- magnetic tunnel junction --- magnetic contacts --- reliability --- practical tests --- reaction distance --- extreme conditions --- spin-orbit torque MRAM --- reinforcement learning --- two-pulse switching scheme --- magnetic field-free switching --- machine learning --- torque --- the calculation in memory --- automation --- magnetic recording --- magnetic read heads --- current perpendicular-to-the-plane giant magnetoresistance --- Heusler alloys --- bit-patterned media --- exchange-coupled-composite media --- microwave-assisted magnetic recording --- hysteresis loop --- combined spin-transfer torque (STT) and spin-orbit torque (SOT) switching --- field like torque --- damping like torque --- magnetic tunnel junction
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As the scaling of electronic semiconductor devices displays signs of saturation, the main focus of research in microelectronics is shifting towards finding new computing paradigms. Electron spin offers additional functionality to digital charge-based devices. Several fundamental problems, including spin injection to a semiconductor, spin propagation and relaxation, and spin manipulation by the gate voltage, have been successfully resolved to open a path towards spin-based reprogrammable electron switches. Devices employing electron spin are nonvolatile; they are able to preserve the stored information without external power. Emerging nonvolatile devices are electrically addressable, possess a simple structure, and offer endurance and speed superior to flash memory. Having nonvolatile memory very close to CMOS offers a prospect of data processing in the nonvolatile segment, where the same devices are used to store and process the information. This opens perspectives for conceptually new low-power computing paradigms within Artificial Intelligence of Things (AIoT). This Special Issue focuses on all topics related to spintronic devices such as spin-based switches, magnetoresistive memories, energy harvesting devices, and sensors that can be employed in in-memory computing concepts and in Artificial Intelligence.
magnetic contacts --- reliability --- practical tests --- reaction distance --- extreme conditions --- spin-orbit torque MRAM --- reinforcement learning --- two-pulse switching scheme --- magnetic field-free switching --- machine learning --- torque --- the calculation in memory --- automation --- magnetic recording --- magnetic read heads --- current perpendicular-to-the-plane giant magnetoresistance --- Heusler alloys --- bit-patterned media --- exchange-coupled-composite media --- microwave-assisted magnetic recording --- hysteresis loop --- combined spin-transfer torque (STT) and spin-orbit torque (SOT) switching --- field like torque --- damping like torque --- magnetic tunnel junction --- n/a
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Antiferromagnetic spintronics is an emerging topic in spintronics that is attracting interest due to its wide range of advantages, including terahertz operation, memory without stray fields, and highly efficient spin generation. The discussion of this topic covers aspects ranging from the development of new antiferromagnetic materials to the applications of these materials in devices. Traditionally, antiferromagnets were treated as less common magnetic materials for fundamental studies and applications. However, recent miniaturisation and high-frequency operation have revealed that they are advantageous over conventional ferromagnets. This Special Issue reviews the current status and future perspectives of antiferromagnetic spintronics.
magnetoelectric effect --- antiferromagnetism --- Cr2O3 thin film --- exchange bias --- antiferromagnetic spintronics --- spintronics --- MnN --- magnetism and magnetic materials --- antiferromagnets --- Heusler alloys --- blocking temperature --- spintronic devices --- perpendicular magnetic anisotropy --- ferrimagnet --- perpendicular exchange bias --- amorphous thin films --- spintronic applications --- magnons --- synthetic antiferromagnets --- antiferromagnetic resonance --- micromagnetics --- spin pumping --- spin-orbit torque --- insulating antiferromagnet --- sub-terahertz waves --- spin-Hall effect --- garnet ferrite --- compensated ferrimagnet --- metal organic decomposition --- n/a
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This book focuses on advanced nanomaterials for energy conversion and storage, covering their design, synthesis, properties and applications in various fields. Developing advanced nanomaterials for high-performance and low-cost energy conversion and storage devices and technologies is of great significance in order to solve the issues of energy crisis and environmental pollution. In this book, various advanced nanomaterials for batteries, capacitors, electrocatalysis, nanogenerators, and magnetic nanomaterials are presented
Technology: general issues --- porous carbon --- ternary composite --- molybdenum oxide --- molybdenum carbide --- energy storage --- Li-O2 batteries --- composite --- ORR --- OER --- Nb2O5 --- Nb4N5 --- heterostructure --- lithium-sulfur batteries --- catalyst --- TiN/Ta2O5 --- multidimensional carbon --- manipulation --- two-dimension amorphous --- component interaction --- geometric configuration --- electrochemistry --- self-powered --- sports monitoring --- hydrogel --- hybrid nano-generator --- janus --- MXenes --- magnetic properties --- DFT --- MXene --- nitrogen reduction --- electrocatalysis --- Gibbs free energy --- doped graphene --- oxygen reduction reaction --- phosphorus-doped --- codoped --- neutron diffraction --- exchange-bias --- magnetocaloric effect --- spin–orbit torque --- perpendicular magnetic anisotropy --- perpendicular effective field --- zero-field switching --- N/P/Fe co-doped carbon --- self-templating synthesis --- 3D porous structure --- oxygen reduction reaction electrocatalysts --- nanomagnets --- Co nanorods --- solvothermal route --- alcohol–thermal method --- magnetic interaction --- single-atom catalyst --- Au/WSSe --- tensile strain --- n/a --- spin-orbit torque --- alcohol-thermal method
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Antiferromagnetic spintronics is an emerging topic in spintronics that is attracting interest due to its wide range of advantages, including terahertz operation, memory without stray fields, and highly efficient spin generation. The discussion of this topic covers aspects ranging from the development of new antiferromagnetic materials to the applications of these materials in devices. Traditionally, antiferromagnets were treated as less common magnetic materials for fundamental studies and applications. However, recent miniaturisation and high-frequency operation have revealed that they are advantageous over conventional ferromagnets. This Special Issue reviews the current status and future perspectives of antiferromagnetic spintronics.
Technology: general issues --- History of engineering & technology --- Energy industries & utilities --- magnetoelectric effect --- antiferromagnetism --- Cr2O3 thin film --- exchange bias --- antiferromagnetic spintronics --- spintronics --- MnN --- magnetism and magnetic materials --- antiferromagnets --- Heusler alloys --- blocking temperature --- spintronic devices --- perpendicular magnetic anisotropy --- ferrimagnet --- perpendicular exchange bias --- amorphous thin films --- spintronic applications --- magnons --- synthetic antiferromagnets --- antiferromagnetic resonance --- micromagnetics --- spin pumping --- spin-orbit torque --- insulating antiferromagnet --- sub-terahertz waves --- spin-Hall effect --- garnet ferrite --- compensated ferrimagnet --- metal organic decomposition --- magnetoelectric effect --- antiferromagnetism --- Cr2O3 thin film --- exchange bias --- antiferromagnetic spintronics --- spintronics --- MnN --- magnetism and magnetic materials --- antiferromagnets --- Heusler alloys --- blocking temperature --- spintronic devices --- perpendicular magnetic anisotropy --- ferrimagnet --- perpendicular exchange bias --- amorphous thin films --- spintronic applications --- magnons --- synthetic antiferromagnets --- antiferromagnetic resonance --- micromagnetics --- spin pumping --- spin-orbit torque --- insulating antiferromagnet --- sub-terahertz waves --- spin-Hall effect --- garnet ferrite --- compensated ferrimagnet --- metal organic decomposition
Choose an application
Antiferromagnetic spintronics is an emerging topic in spintronics that is attracting interest due to its wide range of advantages, including terahertz operation, memory without stray fields, and highly efficient spin generation. The discussion of this topic covers aspects ranging from the development of new antiferromagnetic materials to the applications of these materials in devices. Traditionally, antiferromagnets were treated as less common magnetic materials for fundamental studies and applications. However, recent miniaturisation and high-frequency operation have revealed that they are advantageous over conventional ferromagnets. This Special Issue reviews the current status and future perspectives of antiferromagnetic spintronics.
Technology: general issues --- History of engineering & technology --- Energy industries & utilities --- magnetoelectric effect --- antiferromagnetism --- Cr2O3 thin film --- exchange bias --- antiferromagnetic spintronics --- spintronics --- MnN --- magnetism and magnetic materials --- antiferromagnets --- Heusler alloys --- blocking temperature --- spintronic devices --- perpendicular magnetic anisotropy --- ferrimagnet --- perpendicular exchange bias --- amorphous thin films --- spintronic applications --- magnons --- synthetic antiferromagnets --- antiferromagnetic resonance --- micromagnetics --- spin pumping --- spin-orbit torque --- insulating antiferromagnet --- sub-terahertz waves --- spin-Hall effect --- garnet ferrite --- compensated ferrimagnet --- metal organic decomposition --- n/a
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