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Micro and nano-electro-mechanical system (M/NEMS) devices constitute key technological building blocks to enable increased additional functionalities within Integrated Circuits (ICs) in the More-Than-Moore era, as described in the International Technology Roadmap for Semiconductors. The CMOS ICs and M/NEMS dies can be combined in the same package (SiP), or integrated within a single chip (SoC). In the SoC approach the M/NEMS devices are monolithically integrated together with CMOS circuitry allowing the development of compact and low-cost CMOS-M/NEMS devices for multiple applications (physical sensors, chemical sensors, biosensors, actuators, energy actuators, filters, mechanical relays, and others). On-chip CMOS electronics integration can overcome limitations related to the extremely low-level signals in sub-micrometer and nanometer scale electromechanical transducers enabling novel breakthrough applications. This Special Issue aims to gather high quality research contributions dealing with MEMS and NEMS devices monolithically integrated with CMOS, independently of the final application and fabrication approach adopted (MEMS-first, interleaved MEMS, MEMS-last or others).]

encapsulation --- n/a --- NEM memory switch --- magnetotransistor --- gas sensor --- nano-system array --- metal oxide (MOX) sensor --- capacitive pressure sensor --- real-time temperature compensation loop --- mechanical relays --- single-crystal silicon (SC-Si) --- MEMS relays --- MEMS --- oscillator --- micro-electro-mechanical system (MEMS) --- uncooled IR-bolometer --- microelectromechanical systems --- microbolometer --- programmable sustaining amplifier --- micro sensor --- CMOS-MEMS --- pierce oscillator --- MEMS resonators --- micro/nanoelectromechanical systems (MEMS/NEMS) --- resonator --- microhotplate --- NEMS --- application-specific integrated circuit (ASIC) --- MEMS modelling --- magnetic field --- chopper instrumentation amplifier --- microresonators --- interface circuit --- Hall effect --- thermal detector --- temperature sensor --- infrared sensor --- CMOS–NEMS --- CMOS --- atomic force microscope --- MEMS switches --- stent --- micro-electro-mechanical systems (MEMS) sensors --- nano resonator --- silicon-on-insulator (SOI) --- MEMS-ASIC integration --- Sigma-Delta --- MEMS characterization --- high-Q capacitive accelerometer --- mass sensors --- M3D --- CMOS-NEMS

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The open access journal Micromachines invites manuscript submissions for the Special Issue “Silicon Photonics Bloom”. The past two decades have witnessed a tremendous growth of silicon photonics. Lab-scale research on simple passive component designs is now being expanded by on-chip hybrid systems architectures. With the recent injection of government and private funding, we are living the 1980s of the electronic industry, when the first merchant foundries were established. Soon, we will see more and more merchant foundries proposing well-established electronic design tools, product development kits, and mature component libraries. The open access journal Micromachines invites the submission of manuscripts in the developing area of silicon photonics. The goal of this Special Issue is to highlight the recent developments in this cutting-edge technology.]

History of engineering & technology --- quantum dot --- silicon nanocrystals --- light emitting diode --- vertical grating coupler --- WDM transmitter --- optical interconnects --- silicon photonics --- silicon optical modulator --- Silicon Photonics --- off-chip coupling --- polarisation controller --- integrated polarimeter --- polarisation multiplexing --- polarisation shift keying --- germanium --- integrated optics --- optoelectronics --- photoconductivity --- terahertz --- frequency combs --- heterogeneous integration --- second-harmonic generation --- supercontinuum --- integrated photonics --- mode-locked lasers --- nonlinear optics --- microelectromechanical systems (MEMS) --- electrostatic actuator --- parallel plate actuation --- optical switch --- silicon-on-insulator (SOI) --- micro-platform --- optical waveguide --- silicon nitride photonics --- phase change material --- integrated silicon photonic circuits --- nanophononics --- modulator --- multimode interferometer --- photonics integrated circuit --- carrier plasma --- Mach–Zehnder interferometers --- silicon oxynitride --- thin film --- photoluminescence --- chemical vapor deposition --- physical vapor deposition --- dispersion control --- Bragg gratings --- photonic processors --- unitary transformation --- amorphous silicon oxycarbide --- nitrogen doping --- defect --- plasma enhanced chemical vapor deposition --- n/a --- Mach-Zehnder interferometers

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As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.

quantum mechanical --- n/a --- neuromorphic computation --- off-current (Ioff) --- double-gate tunnel field-effect-transistor --- topological insulator --- back current blocking layer (BCBL) --- CMOS power amplifier IC --- information integration --- distributed Bragg --- spike-timing-dependent plasticity --- electron affinity --- enhancement-mode --- current collapse --- gallium nitride (GaN) --- band-to-band tunneling --- vertical field-effect transistor (VFET) --- ionic liquid --- luminescent centres --- thermal coupling --- vision localization --- PC1D --- UAV --- ZnO/Si --- dual-switching transistor --- memristor --- field-effect transistor --- higher order synchronization --- shallow trench isolation (STI) --- memristive device --- on-current (Ion) --- low voltage --- reflection transmision method --- dielectric layer --- source/drain (S/D) --- high efficiency --- nanostructure synthesis --- InAlN/GaN heterostructure --- supercapacitor --- high-electron mobility transistor (HEMTs) --- heterojunction --- p-GaN --- recessed channel array transistor (RCAT) --- gate field effect --- charge injection --- saddle FinFET (S-FinFET) --- L-shaped tunnel field-effect-transistor --- conductivity --- energy storage --- hierarchical --- PECVD --- sample grating --- MISHEMT --- bistability --- threshold voltage (VTH) --- bandgap tuning --- oscillatory neural networks --- UV irradiation --- Mott transition --- third harmonic tuning --- topological magnetoelectric effect --- cross-gain modulation --- 2D material --- solar cells --- silicon on insulator (SOI) --- Green’s function --- optoelectronic devices --- semiconductor optical amplifier --- ZnO films --- graphene --- AlGaN/GaN --- polarization effect --- two-photon process --- conductive atomic force microscopy (cAFM) --- 2DEG density --- vanadium dioxide --- interface traps --- potential drop width (PDW) --- pattern recognition --- drain-induced barrier lowering (DIBL) --- atomic layer deposition (ALD) --- normally off power devices --- gate-induced drain leakage (GIDL) --- insulator–metal transition (IMT) --- zinc oxide --- synaptic device --- subthreshold slope (SS) --- landing --- silicon --- corner-effect --- conditioned reflex --- quantum dot --- gallium nitride --- bismuth ions --- conduction band offset --- variational form --- Green's function --- insulator-metal transition (IMT)