Narrow your search

Library

FARO (1)

KU Leuven (1)

LUCA School of Arts (1)

Odisee (1)

Thomas More Kempen (1)

Thomas More Mechelen (1)

UCLL (1)

ULB (1)

ULiège (1)

VIVES (1)

More...

Resource type

book (3)


Language

English (3)


Year
From To Submit

2021 (3)

Listing 1 - 3 of 3
Sort by

Book
Micro- and Nanotechnology of Wide Bandgap Semiconductors
Authors: --- ---
Year: 2021 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

Loading...
Export citation

Choose an application

Bookmark

Abstract

Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.

Keywords

Technology: general issues --- GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity --- GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity


Book
Micro- and Nanotechnology of Wide Bandgap Semiconductors
Authors: --- ---
Year: 2021 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

Loading...
Export citation

Choose an application

Bookmark

Abstract

Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.


Book
Micro- and Nanotechnology of Wide Bandgap Semiconductors
Authors: --- ---
Year: 2021 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

Loading...
Export citation

Choose an application

Bookmark

Abstract

Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.

Listing 1 - 3 of 3
Sort by