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This Special Issue reprint presents articles from researchers working on materials processing via electron beams as well as on their characterization, properties, and applications. The articles presented cover various topics, including metal melting and welding, additive manufacturing, electron beam irradiation, electron beam lithography, process modeling, etc.
electron-beam welding --- welded metal structure --- dynamic positioning of an electron beam --- electron beam --- additive manufacturing --- titanium alloys --- wire feed process --- residual stresses --- mechanical properties --- EBI --- γ-ray --- GC-MS --- FT-IR --- larch sapwood --- wood extractives --- melting --- melting temperature --- numerical simulation --- electron beam additive manufacturing --- nanoindentation --- strain rate sensitivity --- creep --- corn starch --- potato starch --- moisture content --- specific heat capacity --- pH --- color parameters --- copper technogenic material --- thermodynamic analysis --- removal efficiency --- patterned sapphire substrate --- electron etching --- gold --- cathodoluminescent analysis --- anisotropy --- light-emitting diodes --- windows --- electron beam welding --- aluminum 6082 --- porosity --- beam figure --- electron-beam lithography --- Monte Carlo method --- proximity function --- electrons scattering --- technogenic Co–Cr–Mo alloy --- electron beam recycling --- refining process --- degree of removal
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This Special Issue reprint presents articles from researchers working on materials processing via electron beams as well as on their characterization, properties, and applications. The articles presented cover various topics, including metal melting and welding, additive manufacturing, electron beam irradiation, electron beam lithography, process modeling, etc.
Research & information: general --- Physics --- electron-beam welding --- welded metal structure --- dynamic positioning of an electron beam --- electron beam --- additive manufacturing --- titanium alloys --- wire feed process --- residual stresses --- mechanical properties --- EBI --- γ-ray --- GC-MS --- FT-IR --- larch sapwood --- wood extractives --- melting --- melting temperature --- numerical simulation --- electron beam additive manufacturing --- nanoindentation --- strain rate sensitivity --- creep --- corn starch --- potato starch --- moisture content --- specific heat capacity --- pH --- color parameters --- copper technogenic material --- thermodynamic analysis --- removal efficiency --- patterned sapphire substrate --- electron etching --- gold --- cathodoluminescent analysis --- anisotropy --- light-emitting diodes --- windows --- electron beam welding --- aluminum 6082 --- porosity --- beam figure --- electron-beam lithography --- Monte Carlo method --- proximity function --- electrons scattering --- technogenic Co–Cr–Mo alloy --- electron beam recycling --- refining process --- degree of removal --- electron-beam welding --- welded metal structure --- dynamic positioning of an electron beam --- electron beam --- additive manufacturing --- titanium alloys --- wire feed process --- residual stresses --- mechanical properties --- EBI --- γ-ray --- GC-MS --- FT-IR --- larch sapwood --- wood extractives --- melting --- melting temperature --- numerical simulation --- electron beam additive manufacturing --- nanoindentation --- strain rate sensitivity --- creep --- corn starch --- potato starch --- moisture content --- specific heat capacity --- pH --- color parameters --- copper technogenic material --- thermodynamic analysis --- removal efficiency --- patterned sapphire substrate --- electron etching --- gold --- cathodoluminescent analysis --- anisotropy --- light-emitting diodes --- windows --- electron beam welding --- aluminum 6082 --- porosity --- beam figure --- electron-beam lithography --- Monte Carlo method --- proximity function --- electrons scattering --- technogenic Co–Cr–Mo alloy --- electron beam recycling --- refining process --- degree of removal
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This Special Issue reprint presents articles from researchers working on materials processing via electron beams as well as on their characterization, properties, and applications. The articles presented cover various topics, including metal melting and welding, additive manufacturing, electron beam irradiation, electron beam lithography, process modeling, etc.
Research & information: general --- Physics --- electron-beam welding --- welded metal structure --- dynamic positioning of an electron beam --- electron beam --- additive manufacturing --- titanium alloys --- wire feed process --- residual stresses --- mechanical properties --- EBI --- γ-ray --- GC-MS --- FT-IR --- larch sapwood --- wood extractives --- melting --- melting temperature --- numerical simulation --- electron beam additive manufacturing --- nanoindentation --- strain rate sensitivity --- creep --- corn starch --- potato starch --- moisture content --- specific heat capacity --- pH --- color parameters --- copper technogenic material --- thermodynamic analysis --- removal efficiency --- patterned sapphire substrate --- electron etching --- gold --- cathodoluminescent analysis --- anisotropy --- light-emitting diodes --- windows --- electron beam welding --- aluminum 6082 --- porosity --- beam figure --- electron-beam lithography --- Monte Carlo method --- proximity function --- electrons scattering --- technogenic Co–Cr–Mo alloy --- electron beam recycling --- refining process --- degree of removal
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Significant progress has been made in nanophotonics and the use of nanostructured materials for optoelectronic devices, including light-emitting diodes (LEDs) and laser diodes, which have recently attracted considerable attention due to their unique geometry. Nanostructures in small dimensions, comprising nanowires, nanotubes, and nanoparticles, etc,. can be perfectly integrated into a variety of technological platforms, offering novel physical and chemical properties for high-performance, light-emitting devices. This Special Issue aims to present the most recent advances in the field of nanophotonics, which focuses on LEDs and laser diodes. We invite contributions of original research articles, as well as review articles that are aligned to the following topics that include, but are not limited to, thetheoretical calculation, synthesis, characterization, and application of such novel nanostructures for light-emitting devices. The application of nanostructured light-emitters in general lighting, imaging, and displays is also highly encouraged.
History of engineering & technology --- Liquid phase deposition method --- InGaN/GaN light-emitting diode --- silver nanoparticle --- zinc oxide --- localized surface plasmon --- β-Ga2O3 --- III-Nitrides --- monoclinic --- hexagonal arrangement --- high-power --- current distribution --- vertical structure LED --- blue organic light emitting diodes --- transport materials --- host-dopant --- nanoparticles --- luminescence --- non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals --- photoluminescence properties --- tunable fluorescence emission --- one-pot approach --- perovskite light-emitting diodes --- three-step spin coating --- hole transport layer --- PEDOT:PSS/MoO3-ammonia composite --- μLED displays --- μLEDs --- GaN nanowires --- core-shell structure --- ultraviolet (UV) emitter --- surface plasmon --- Pt nanoparticles --- hole-pattern --- photon emission efficiency --- distributed Bragg reflectors --- gratings --- GaN-based lasers --- linewidth --- epsilon-near-zero --- wideband absorber --- plasmon mode --- Brewster mode --- visible light communication --- photonic crystals --- flip-chip LED --- Purcell effect --- light extraction efficiency --- nanostructured materials --- surface/interface properties --- nanostructured light-emitting devices --- physical mechanism --- surface/interface modification --- surface/interface control --- micro-scale light emitting diode --- sapphire substrate --- encapsulation --- compound semiconductor --- nanostructure --- ultraviolet --- light-emitting diode (LED) --- molecular beam epitaxy --- GaN --- AlN --- photonic nanojet --- photonic nanojet array --- self-assembly --- template-assisted self-assembly --- patterning efficiency --- III-nitride thin film --- nanostructures --- ultraviolet emitters --- surface passivation --- luminescence intensity --- Liquid phase deposition method --- InGaN/GaN light-emitting diode --- silver nanoparticle --- zinc oxide --- localized surface plasmon --- β-Ga2O3 --- III-Nitrides --- monoclinic --- hexagonal arrangement --- high-power --- current distribution --- vertical structure LED --- blue organic light emitting diodes --- transport materials --- host-dopant --- nanoparticles --- luminescence --- non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals --- photoluminescence properties --- tunable fluorescence emission --- one-pot approach --- perovskite light-emitting diodes --- three-step spin coating --- hole transport layer --- PEDOT:PSS/MoO3-ammonia composite --- μLED displays --- μLEDs --- GaN nanowires --- core-shell structure --- ultraviolet (UV) emitter --- surface plasmon --- Pt nanoparticles --- hole-pattern --- photon emission efficiency --- distributed Bragg reflectors --- gratings --- GaN-based lasers --- linewidth --- epsilon-near-zero --- wideband absorber --- plasmon mode --- Brewster mode --- visible light communication --- photonic crystals --- flip-chip LED --- Purcell effect --- light extraction efficiency --- nanostructured materials --- surface/interface properties --- nanostructured light-emitting devices --- physical mechanism --- surface/interface modification --- surface/interface control --- micro-scale light emitting diode --- sapphire substrate --- encapsulation --- compound semiconductor --- nanostructure --- ultraviolet --- light-emitting diode (LED) --- molecular beam epitaxy --- GaN --- AlN --- photonic nanojet --- photonic nanojet array --- self-assembly --- template-assisted self-assembly --- patterning efficiency --- III-nitride thin film --- nanostructures --- ultraviolet emitters --- surface passivation --- luminescence intensity
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While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
ohmic contact --- n/a --- MESFET --- optical band gap --- wide-bandgap semiconductor --- annealing temperature --- junction termination extension (JTE) --- channel length modulation --- silicon carbide (SiC) --- amorphous InGaZnO (a-IGZO) --- light output power --- GaN --- electrochromism --- large signal performance --- passivation layer --- 4H-SiC --- positive gate bias stress (PGBS) --- asymmetric power combining --- ultrahigh upper gate height --- high electron mobility transistors --- space application --- gallium nitride (GaN) --- phase balance --- edge termination --- distributed Bragg reflector --- cathode field plate (CFP) --- ammonothermal GaN --- anode field plate (AFP) --- W band --- GaN high electron mobility transistor (HEMT) --- 1T DRAM --- growth of GaN --- tungsten trioxide film --- thin-film transistor (TFT) --- micron-sized patterned sapphire substrate --- power added efficiency --- T-anode --- analytical model --- AlGaN/GaN --- harsh environment --- high-temperature operation --- amplitude balance --- buffer layer --- characteristic length --- Ku-band --- DIBL effect --- I–V kink effect --- flip-chip light-emitting diodes --- high electron mobility transistors (HEMTs) --- power amplifier --- sidewall GaN --- external quantum efficiency --- breakdown voltage (BV) --- threshold voltage (Vth) stability --- regrown contact --- AlGaN/GaN HEMT --- TCAD --- high electron mobility transistor (HEMT) --- I-V kink effect
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Significant progress has been made in nanophotonics and the use of nanostructured materials for optoelectronic devices, including light-emitting diodes (LEDs) and laser diodes, which have recently attracted considerable attention due to their unique geometry. Nanostructures in small dimensions, comprising nanowires, nanotubes, and nanoparticles, etc,. can be perfectly integrated into a variety of technological platforms, offering novel physical and chemical properties for high-performance, light-emitting devices. This Special Issue aims to present the most recent advances in the field of nanophotonics, which focuses on LEDs and laser diodes. We invite contributions of original research articles, as well as review articles that are aligned to the following topics that include, but are not limited to, thetheoretical calculation, synthesis, characterization, and application of such novel nanostructures for light-emitting devices. The application of nanostructured light-emitters in general lighting, imaging, and displays is also highly encouraged.
History of engineering & technology --- Liquid phase deposition method --- InGaN/GaN light-emitting diode --- silver nanoparticle --- zinc oxide --- localized surface plasmon --- β-Ga2O3 --- III-Nitrides --- monoclinic --- hexagonal arrangement --- high-power --- current distribution --- vertical structure LED --- blue organic light emitting diodes --- transport materials --- host-dopant --- nanoparticles --- luminescence --- non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals --- photoluminescence properties --- tunable fluorescence emission --- one-pot approach --- perovskite light-emitting diodes --- three-step spin coating --- hole transport layer --- PEDOT:PSS/MoO3-ammonia composite --- μLED displays --- μLEDs --- GaN nanowires --- core-shell structure --- ultraviolet (UV) emitter --- surface plasmon --- Pt nanoparticles --- hole-pattern --- photon emission efficiency --- distributed Bragg reflectors --- gratings --- GaN-based lasers --- linewidth --- epsilon-near-zero --- wideband absorber --- plasmon mode --- Brewster mode --- visible light communication --- photonic crystals --- flip-chip LED --- Purcell effect --- light extraction efficiency --- nanostructured materials --- surface/interface properties --- nanostructured light-emitting devices --- physical mechanism --- surface/interface modification --- surface/interface control --- micro-scale light emitting diode --- sapphire substrate --- encapsulation --- compound semiconductor --- nanostructure --- ultraviolet --- light-emitting diode (LED) --- molecular beam epitaxy --- GaN --- AlN --- photonic nanojet --- photonic nanojet array --- self-assembly --- template-assisted self-assembly --- patterning efficiency --- III-nitride thin film --- nanostructures --- ultraviolet emitters --- surface passivation --- luminescence intensity --- n/a
Choose an application
Significant progress has been made in nanophotonics and the use of nanostructured materials for optoelectronic devices, including light-emitting diodes (LEDs) and laser diodes, which have recently attracted considerable attention due to their unique geometry. Nanostructures in small dimensions, comprising nanowires, nanotubes, and nanoparticles, etc,. can be perfectly integrated into a variety of technological platforms, offering novel physical and chemical properties for high-performance, light-emitting devices. This Special Issue aims to present the most recent advances in the field of nanophotonics, which focuses on LEDs and laser diodes. We invite contributions of original research articles, as well as review articles that are aligned to the following topics that include, but are not limited to, thetheoretical calculation, synthesis, characterization, and application of such novel nanostructures for light-emitting devices. The application of nanostructured light-emitters in general lighting, imaging, and displays is also highly encouraged.
Liquid phase deposition method --- InGaN/GaN light-emitting diode --- silver nanoparticle --- zinc oxide --- localized surface plasmon --- β-Ga2O3 --- III-Nitrides --- monoclinic --- hexagonal arrangement --- high-power --- current distribution --- vertical structure LED --- blue organic light emitting diodes --- transport materials --- host-dopant --- nanoparticles --- luminescence --- non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals --- photoluminescence properties --- tunable fluorescence emission --- one-pot approach --- perovskite light-emitting diodes --- three-step spin coating --- hole transport layer --- PEDOT:PSS/MoO3-ammonia composite --- μLED displays --- μLEDs --- GaN nanowires --- core-shell structure --- ultraviolet (UV) emitter --- surface plasmon --- Pt nanoparticles --- hole-pattern --- photon emission efficiency --- distributed Bragg reflectors --- gratings --- GaN-based lasers --- linewidth --- epsilon-near-zero --- wideband absorber --- plasmon mode --- Brewster mode --- visible light communication --- photonic crystals --- flip-chip LED --- Purcell effect --- light extraction efficiency --- nanostructured materials --- surface/interface properties --- nanostructured light-emitting devices --- physical mechanism --- surface/interface modification --- surface/interface control --- micro-scale light emitting diode --- sapphire substrate --- encapsulation --- compound semiconductor --- nanostructure --- ultraviolet --- light-emitting diode (LED) --- molecular beam epitaxy --- GaN --- AlN --- photonic nanojet --- photonic nanojet array --- self-assembly --- template-assisted self-assembly --- patterning efficiency --- III-nitride thin film --- nanostructures --- ultraviolet emitters --- surface passivation --- luminescence intensity --- n/a
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