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The microwave and millimeter wave frequency range is nowadays widely exploited in a large variety of fields including (wireless) communications, security, radar, spectroscopy, but also astronomy and biomedical, to name a few. This Special Issue focuses on the interaction between the nanoscale dimensions and centimeter to millimeter wavelengths. This interaction has been proven to be efficient for the design and fabrication of devices showing enhanced performance. Novel contributions are welcome in the field of devices based on nanoscaled geometries and materials. Applications cover, but not are limited to, electronics, sensors, signal processing, imaging and metrology, all exploiting nanoscale/nanotechnology at microwave and millimeter waves. Contributions can take the form of short communications, regular or review papers.
Technology: general issues --- frequency doubler --- broadband matching --- Schottky diodes --- self-bias resistor --- conversion loss --- three-dimensional electromagnetic (3D-EM) model --- millimeter wave --- terahertz --- high-gain --- compact --- wideband --- resonant cavity --- Fabry-Perot cavity --- cavity resonator --- EBG resonator --- J band --- MEMS --- switch --- microwave --- ferromagnetic --- laser processing --- substrate integrated waveguide --- nanowire --- multi-wall carbon nanotubes --- microwave impedance --- small antennas --- gas sensors --- acetone detection --- microwave application --- UV illumination --- low-noise amplifier (LNA) --- frequency-reconfigurable LNA --- multimodal circuit --- SiGe BiCMOS --- hetero junction bipolar transistor (HBT) --- RF switch --- frequency doubler --- broadband matching --- Schottky diodes --- self-bias resistor --- conversion loss --- three-dimensional electromagnetic (3D-EM) model --- millimeter wave --- terahertz --- high-gain --- compact --- wideband --- resonant cavity --- Fabry-Perot cavity --- cavity resonator --- EBG resonator --- J band --- MEMS --- switch --- microwave --- ferromagnetic --- laser processing --- substrate integrated waveguide --- nanowire --- multi-wall carbon nanotubes --- microwave impedance --- small antennas --- gas sensors --- acetone detection --- microwave application --- UV illumination --- low-noise amplifier (LNA) --- frequency-reconfigurable LNA --- multimodal circuit --- SiGe BiCMOS --- hetero junction bipolar transistor (HBT) --- RF switch
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Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
Technology: general issues --- graphene --- polycrystalline silicon --- photodiode --- phototransistor --- pixel --- high dynamic range (HDR) image --- Ni/4H-SiC Schottky barrier diodes (SBDs) --- C/Si ratios --- 1/f noise --- resonant cavity --- photodetectors --- near-infrared --- silicon --- p-Si/i-ZnO/n-AZO --- avalanche photodiode (APD) --- impact ionization coefficients --- GeSn alloys --- silicon photonics --- photonic integrated circuits --- microbolometer --- complementary metal oxide semiconductor (CMOS)-compatible --- uncooled infrared detectors --- thermal detectors --- infrared focal plane array (IRFPA) --- read-out integrated circuit (ROIC) --- photodetector --- semiconductor --- microphotonics --- group IV --- colloidal systems --- single-photon avalanche diode (SPAD) --- gating --- avalanche transients --- 3.3 V/0.35 µm complementary metal-oxide-semiconductor (CMOS) --- n/a
Choose an application
The microwave and millimeter wave frequency range is nowadays widely exploited in a large variety of fields including (wireless) communications, security, radar, spectroscopy, but also astronomy and biomedical, to name a few. This Special Issue focuses on the interaction between the nanoscale dimensions and centimeter to millimeter wavelengths. This interaction has been proven to be efficient for the design and fabrication of devices showing enhanced performance. Novel contributions are welcome in the field of devices based on nanoscaled geometries and materials. Applications cover, but not are limited to, electronics, sensors, signal processing, imaging and metrology, all exploiting nanoscale/nanotechnology at microwave and millimeter waves. Contributions can take the form of short communications, regular or review papers.
Technology: general issues --- frequency doubler --- broadband matching --- Schottky diodes --- self-bias resistor --- conversion loss --- three-dimensional electromagnetic (3D-EM) model --- millimeter wave --- terahertz --- high-gain --- compact --- wideband --- resonant cavity --- Fabry–Perot cavity --- cavity resonator --- EBG resonator --- J band --- MEMS --- switch --- microwave --- ferromagnetic --- laser processing --- substrate integrated waveguide --- nanowire --- multi-wall carbon nanotubes --- microwave impedance --- small antennas --- gas sensors --- acetone detection --- microwave application --- UV illumination --- low-noise amplifier (LNA) --- frequency-reconfigurable LNA --- multimodal circuit --- SiGe BiCMOS --- hetero junction bipolar transistor (HBT) --- RF switch --- n/a --- Fabry-Perot cavity
Choose an application
Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
graphene --- polycrystalline silicon --- photodiode --- phototransistor --- pixel --- high dynamic range (HDR) image --- Ni/4H-SiC Schottky barrier diodes (SBDs) --- C/Si ratios --- 1/f noise --- resonant cavity --- photodetectors --- near-infrared --- silicon --- p-Si/i-ZnO/n-AZO --- avalanche photodiode (APD) --- impact ionization coefficients --- GeSn alloys --- silicon photonics --- photonic integrated circuits --- microbolometer --- complementary metal oxide semiconductor (CMOS)-compatible --- uncooled infrared detectors --- thermal detectors --- infrared focal plane array (IRFPA) --- read-out integrated circuit (ROIC) --- photodetector --- semiconductor --- microphotonics --- group IV --- colloidal systems --- single-photon avalanche diode (SPAD) --- gating --- avalanche transients --- 3.3 V/0.35 µm complementary metal-oxide-semiconductor (CMOS) --- n/a
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The formulation of coated composite materials is an important field of research around the world today. Coated composite materials include inhomogeneous and anisotropic materials. These materials are formulated by an amalgamate minimum of two or more materials that accommodate different properties. These materials have a vast field of appealing applications that encourage scientists to work on them. Due to their unique properties, such as their strength, liability, swiftness, and low cost, they are used as promising candidates for reliable applications in various fields, such as biomedical, engineering, energy devices, wastewater treatment, and agriculture. Different types of composite materials have had a noticeable impact in these fields already, such as glass, plastic, and, most promisingly, metal oxide nanoparticles.
6H-SiC --- Cu-Sn alloy --- ion implantation --- wettability --- interface --- nanoparticles --- dyes --- catalysis --- reduction --- glass/Kevlar --- hybrid composites --- hand layup --- epoxy --- hardener --- tensile --- hardness shore D --- water absorption --- density --- peel --- ratio --- Al2O3-Cr2O3 composite --- consolidation behavior --- microstructure --- mechanical properties --- thermal shock resistance --- ammonia electro-oxidation --- cyclic voltammetry --- electrochemical surface area (ECSA) --- electrocatalysts --- nanocomposites --- infrared detector --- resonant cavity --- energy applications --- absorptance --- Ce–Cu oxide --- co-precipitation --- photocatalyst --- dye degradation --- CuO/γ-Al2O3 --- ammonia electro-oxidation (AEO) --- nanocomposite structure --- XRD --- photoluminescence --- rare earth element REE --- heterogeneous catalysis --- perovskite --- CH3NH3PbI3 --- solar cells --- polysilane --- decaphenylcyclopentasilane --- stability --- chlorobenzene --- calculation --- Raman scattering --- lead-free --- NBT–BMN --- weight loss --- dielectric --- piezoelectric ceramics --- bimetallic nanoparticles --- kinetics --- antioxidant studies --- catalytic activity
Choose an application
The microwave and millimeter wave frequency range is nowadays widely exploited in a large variety of fields including (wireless) communications, security, radar, spectroscopy, but also astronomy and biomedical, to name a few. This Special Issue focuses on the interaction between the nanoscale dimensions and centimeter to millimeter wavelengths. This interaction has been proven to be efficient for the design and fabrication of devices showing enhanced performance. Novel contributions are welcome in the field of devices based on nanoscaled geometries and materials. Applications cover, but not are limited to, electronics, sensors, signal processing, imaging and metrology, all exploiting nanoscale/nanotechnology at microwave and millimeter waves. Contributions can take the form of short communications, regular or review papers.
frequency doubler --- broadband matching --- Schottky diodes --- self-bias resistor --- conversion loss --- three-dimensional electromagnetic (3D-EM) model --- millimeter wave --- terahertz --- high-gain --- compact --- wideband --- resonant cavity --- Fabry–Perot cavity --- cavity resonator --- EBG resonator --- J band --- MEMS --- switch --- microwave --- ferromagnetic --- laser processing --- substrate integrated waveguide --- nanowire --- multi-wall carbon nanotubes --- microwave impedance --- small antennas --- gas sensors --- acetone detection --- microwave application --- UV illumination --- low-noise amplifier (LNA) --- frequency-reconfigurable LNA --- multimodal circuit --- SiGe BiCMOS --- hetero junction bipolar transistor (HBT) --- RF switch --- n/a --- Fabry-Perot cavity
Choose an application
The formulation of coated composite materials is an important field of research around the world today. Coated composite materials include inhomogeneous and anisotropic materials. These materials are formulated by an amalgamate minimum of two or more materials that accommodate different properties. These materials have a vast field of appealing applications that encourage scientists to work on them. Due to their unique properties, such as their strength, liability, swiftness, and low cost, they are used as promising candidates for reliable applications in various fields, such as biomedical, engineering, energy devices, wastewater treatment, and agriculture. Different types of composite materials have had a noticeable impact in these fields already, such as glass, plastic, and, most promisingly, metal oxide nanoparticles.
Technology: general issues --- 6H-SiC --- Cu-Sn alloy --- ion implantation --- wettability --- interface --- nanoparticles --- dyes --- catalysis --- reduction --- glass/Kevlar --- hybrid composites --- hand layup --- epoxy --- hardener --- tensile --- hardness shore D --- water absorption --- density --- peel --- ratio --- Al2O3-Cr2O3 composite --- consolidation behavior --- microstructure --- mechanical properties --- thermal shock resistance --- ammonia electro-oxidation --- cyclic voltammetry --- electrochemical surface area (ECSA) --- electrocatalysts --- nanocomposites --- infrared detector --- resonant cavity --- energy applications --- absorptance --- Ce–Cu oxide --- co-precipitation --- photocatalyst --- dye degradation --- CuO/γ-Al2O3 --- ammonia electro-oxidation (AEO) --- nanocomposite structure --- XRD --- photoluminescence --- rare earth element REE --- heterogeneous catalysis --- perovskite --- CH3NH3PbI3 --- solar cells --- polysilane --- decaphenylcyclopentasilane --- stability --- chlorobenzene --- calculation --- Raman scattering --- lead-free --- NBT–BMN --- weight loss --- dielectric --- piezoelectric ceramics --- bimetallic nanoparticles --- kinetics --- antioxidant studies --- catalytic activity --- 6H-SiC --- Cu-Sn alloy --- ion implantation --- wettability --- interface --- nanoparticles --- dyes --- catalysis --- reduction --- glass/Kevlar --- hybrid composites --- hand layup --- epoxy --- hardener --- tensile --- hardness shore D --- water absorption --- density --- peel --- ratio --- Al2O3-Cr2O3 composite --- consolidation behavior --- microstructure --- mechanical properties --- thermal shock resistance --- ammonia electro-oxidation --- cyclic voltammetry --- electrochemical surface area (ECSA) --- electrocatalysts --- nanocomposites --- infrared detector --- resonant cavity --- energy applications --- absorptance --- Ce–Cu oxide --- co-precipitation --- photocatalyst --- dye degradation --- CuO/γ-Al2O3 --- ammonia electro-oxidation (AEO) --- nanocomposite structure --- XRD --- photoluminescence --- rare earth element REE --- heterogeneous catalysis --- perovskite --- CH3NH3PbI3 --- solar cells --- polysilane --- decaphenylcyclopentasilane --- stability --- chlorobenzene --- calculation --- Raman scattering --- lead-free --- NBT–BMN --- weight loss --- dielectric --- piezoelectric ceramics --- bimetallic nanoparticles --- kinetics --- antioxidant studies --- catalytic activity
Choose an application
Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
Technology: general issues --- graphene --- polycrystalline silicon --- photodiode --- phototransistor --- pixel --- high dynamic range (HDR) image --- Ni/4H-SiC Schottky barrier diodes (SBDs) --- C/Si ratios --- 1/f noise --- resonant cavity --- photodetectors --- near-infrared --- silicon --- p-Si/i-ZnO/n-AZO --- avalanche photodiode (APD) --- impact ionization coefficients --- GeSn alloys --- silicon photonics --- photonic integrated circuits --- microbolometer --- complementary metal oxide semiconductor (CMOS)-compatible --- uncooled infrared detectors --- thermal detectors --- infrared focal plane array (IRFPA) --- read-out integrated circuit (ROIC) --- photodetector --- semiconductor --- microphotonics --- group IV --- colloidal systems --- single-photon avalanche diode (SPAD) --- gating --- avalanche transients --- 3.3 V/0.35 µm complementary metal-oxide-semiconductor (CMOS) --- graphene --- polycrystalline silicon --- photodiode --- phototransistor --- pixel --- high dynamic range (HDR) image --- Ni/4H-SiC Schottky barrier diodes (SBDs) --- C/Si ratios --- 1/f noise --- resonant cavity --- photodetectors --- near-infrared --- silicon --- p-Si/i-ZnO/n-AZO --- avalanche photodiode (APD) --- impact ionization coefficients --- GeSn alloys --- silicon photonics --- photonic integrated circuits --- microbolometer --- complementary metal oxide semiconductor (CMOS)-compatible --- uncooled infrared detectors --- thermal detectors --- infrared focal plane array (IRFPA) --- read-out integrated circuit (ROIC) --- photodetector --- semiconductor --- microphotonics --- group IV --- colloidal systems --- single-photon avalanche diode (SPAD) --- gating --- avalanche transients --- 3.3 V/0.35 µm complementary metal-oxide-semiconductor (CMOS)
Choose an application
The formulation of coated composite materials is an important field of research around the world today. Coated composite materials include inhomogeneous and anisotropic materials. These materials are formulated by an amalgamate minimum of two or more materials that accommodate different properties. These materials have a vast field of appealing applications that encourage scientists to work on them. Due to their unique properties, such as their strength, liability, swiftness, and low cost, they are used as promising candidates for reliable applications in various fields, such as biomedical, engineering, energy devices, wastewater treatment, and agriculture. Different types of composite materials have had a noticeable impact in these fields already, such as glass, plastic, and, most promisingly, metal oxide nanoparticles.
Technology: general issues --- 6H-SiC --- Cu-Sn alloy --- ion implantation --- wettability --- interface --- nanoparticles --- dyes --- catalysis --- reduction --- glass/Kevlar --- hybrid composites --- hand layup --- epoxy --- hardener --- tensile --- hardness shore D --- water absorption --- density --- peel --- ratio --- Al2O3-Cr2O3 composite --- consolidation behavior --- microstructure --- mechanical properties --- thermal shock resistance --- ammonia electro-oxidation --- cyclic voltammetry --- electrochemical surface area (ECSA) --- electrocatalysts --- nanocomposites --- infrared detector --- resonant cavity --- energy applications --- absorptance --- Ce–Cu oxide --- co-precipitation --- photocatalyst --- dye degradation --- CuO/γ-Al2O3 --- ammonia electro-oxidation (AEO) --- nanocomposite structure --- XRD --- photoluminescence --- rare earth element REE --- heterogeneous catalysis --- perovskite --- CH3NH3PbI3 --- solar cells --- polysilane --- decaphenylcyclopentasilane --- stability --- chlorobenzene --- calculation --- Raman scattering --- lead-free --- NBT–BMN --- weight loss --- dielectric --- piezoelectric ceramics --- bimetallic nanoparticles --- kinetics --- antioxidant studies --- catalytic activity
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