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57.017.3 --- Adaptability. Accommodation. Acclimatization. Ability to recover. Regeneration --- 57.017.3 Adaptability. Accommodation. Acclimatization. Ability to recover. Regeneration --- Adaptation (Biology). --- Anpassung.

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This Special Issue “Characterization of Nanomaterials” collects nine selected papers presented at the 6th Dresden Nanoanalysis Symposium, held at Fraunhofer Institute for Ceramic Technologies and Systems in Dresden, Germany, on 31 August 2018. Following the specific motto of this annual symposium “Materials challenges—Micro- and nanoscale characterization”, it covered various topics of nanoscale materials characterization along the whole value and innovation chain, from fundamental research up to industrial applications. The scope of this Special Issue is to provide an overview of the current status, recent developments and research activities in the field of nanoscale materials characterization, with a particular emphasis on future scenarios. Primarily, analytical techniques for the characterization of thin films and nanostructures are discussed, including modeling and simulation. We anticipate that this Special Issue will be accessible to a wide audience, as it explores not only methodical aspects of nanoscale materials characterization, but also materials synthesis, fabrication of devices and applications.

Technology: general issues --- physical vapor deposition --- magnetron sputtering --- AlN/Al coating --- silicon substrate --- residual stresses --- wafer curvature method --- nanoscale residual stress profiling --- indentation failure modes --- nanoindentation adhesion --- intermetallic phases --- growth kinetics --- Al–Ni system --- zinc oxide --- nanoparticles --- paper transistors --- printed electronics --- electrolyte-gated transistors --- microwave synthesis --- oxide dissociation --- doping --- rare earth ions --- upconversion --- liquid alloys --- 2D materials --- thin films --- Ga–Sn–Zn alloys --- gallium alloys --- nanoanalysis --- lithium-ion --- nickel–manganese–cobalt oxide (NMC) --- leaching --- recycling --- recover --- degradation --- SEM-EDX --- Raman spectroscopy --- resistive switching memories --- multi-level cell --- copper oxide --- grain boundaries --- aluminum oxide --- p-type TFT --- p-type oxide semiconductors --- SnO electrical properties --- oxide structure analysis --- ToF-SIMS 3D imaging --- compositional depth profiling --- high aspect ratio (HAR) structures --- silicon doped hafnium oxide (HSO) ALD deposition --- lateral high aspect ratio (LHAR) --- ToF-SIMS analysis --- n/a --- Al-Ni system --- Ga-Sn-Zn alloys --- nickel-manganese-cobalt oxide (NMC)

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• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

This Special Issue “Characterization of Nanomaterials” collects nine selected papers presented at the 6th Dresden Nanoanalysis Symposium, held at Fraunhofer Institute for Ceramic Technologies and Systems in Dresden, Germany, on 31 August 2018. Following the specific motto of this annual symposium “Materials challenges—Micro- and nanoscale characterization”, it covered various topics of nanoscale materials characterization along the whole value and innovation chain, from fundamental research up to industrial applications. The scope of this Special Issue is to provide an overview of the current status, recent developments and research activities in the field of nanoscale materials characterization, with a particular emphasis on future scenarios. Primarily, analytical techniques for the characterization of thin films and nanostructures are discussed, including modeling and simulation. We anticipate that this Special Issue will be accessible to a wide audience, as it explores not only methodical aspects of nanoscale materials characterization, but also materials synthesis, fabrication of devices and applications.

Technology: general issues --- physical vapor deposition --- magnetron sputtering --- AlN/Al coating --- silicon substrate --- residual stresses --- wafer curvature method --- nanoscale residual stress profiling --- indentation failure modes --- nanoindentation adhesion --- intermetallic phases --- growth kinetics --- Al-Ni system --- zinc oxide --- nanoparticles --- paper transistors --- printed electronics --- electrolyte-gated transistors --- microwave synthesis --- oxide dissociation --- doping --- rare earth ions --- upconversion --- liquid alloys --- 2D materials --- thin films --- Ga-Sn-Zn alloys --- gallium alloys --- nanoanalysis --- lithium-ion --- nickel-manganese-cobalt oxide (NMC) --- leaching --- recycling --- recover --- degradation --- SEM-EDX --- Raman spectroscopy --- resistive switching memories --- multi-level cell --- copper oxide --- grain boundaries --- aluminum oxide --- p-type TFT --- p-type oxide semiconductors --- SnO electrical properties --- oxide structure analysis --- ToF-SIMS 3D imaging --- compositional depth profiling --- high aspect ratio (HAR) structures --- silicon doped hafnium oxide (HSO) ALD deposition --- lateral high aspect ratio (LHAR) --- ToF-SIMS analysis --- physical vapor deposition --- magnetron sputtering --- AlN/Al coating --- silicon substrate --- residual stresses --- wafer curvature method --- nanoscale residual stress profiling --- indentation failure modes --- nanoindentation adhesion --- intermetallic phases --- growth kinetics --- Al-Ni system --- zinc oxide --- nanoparticles --- paper transistors --- printed electronics --- electrolyte-gated transistors --- microwave synthesis --- oxide dissociation --- doping --- rare earth ions --- upconversion --- liquid alloys --- 2D materials --- thin films --- Ga-Sn-Zn alloys --- gallium alloys --- nanoanalysis --- lithium-ion --- nickel-manganese-cobalt oxide (NMC) --- leaching --- recycling --- recover --- degradation --- SEM-EDX --- Raman spectroscopy --- resistive switching memories --- multi-level cell --- copper oxide --- grain boundaries --- aluminum oxide --- p-type TFT --- p-type oxide semiconductors --- SnO electrical properties --- oxide structure analysis --- ToF-SIMS 3D imaging --- compositional depth profiling --- high aspect ratio (HAR) structures --- silicon doped hafnium oxide (HSO) ALD deposition --- lateral high aspect ratio (LHAR) --- ToF-SIMS analysis