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In this work, up to 80 Gbit/s monolithically integrated clock and data recovery (CDR) circuits with 1:2 demultiplexer are developed. The integrated circuits are manufactured using an InP double heterojunction bipolar transistor (DHBT) technology, featuring cut-off frequency values of more than 250 GHz. The outstanding and (to some extent) record achievements throughout the work make an essential contribution to the development of future optical telecommunication networks operating at 80 Gbit/s.
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In this work, up to 80 Gbit/s monolithically integrated clock and data recovery (CDR) circuits with 1:2 demultiplexer are developed. The integrated circuits are manufactured using an InP double heterojunction bipolar transistor (DHBT) technology, featuring cut-off frequency values of more than 250 GHz. The outstanding and (to some extent) record achievements throughout the work make an essential contribution to the development of future optical telecommunication networks operating at 80 Gbit/s.
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Optical materials. --- Optics --- Materials
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Optical materials. --- Optics --- Materials
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The aim of this volume is to disseminate information on the best practices for Photonics Materials and Devices, Optical Materials and Devices, NEMS/MEMS Materials and Devices, Electronic Materials and Instruments, Modeling, Simulation and Applications, etc. It offers an opportunity for engineers and scientists in academia, industry and government to address the most innovative research and development concepts, including technical challenges and social and economic issues, and to expound their ideas, results, work in progress and experience concerning all aspects of Optical and Electronic Mate
Electronics --- Optical materials --- Materials
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