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MEMS devices are found in many of today’s electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense.

Engineering --- Technology --- History. --- high-power impulse magnetron sputtering (HiPIMS) --- silicon carbide --- aluminum nitride --- thin film --- Rutherford backscattering spectrometry (RBS) --- grazing incidence X-ray diffraction (GIXRD) --- Raman spectroscopy --- 6H-SiC --- indentation --- deformation --- material removal mechanisms --- critical load --- 4H-SiC --- critical depth of cut --- Berkovich indenter --- cleavage strength --- nanoscratching --- power electronics --- high-temperature converters --- MEMS devices --- SiC power electronic devices --- neural interface --- neural probe --- neural implant --- microelectrode array --- MEA --- SiC --- 3C-SiC --- doped SiC --- n-type --- p-type --- amorphous SiC --- epitaxial growth --- electrochemical characterization --- MESFET --- simulation --- PAE --- bulk micromachining --- electrochemical etching --- circular membrane --- bulge test --- vibrometry --- mechanical properties --- Young’s modulus --- residual stress --- FEM --- semiconductor radiation detector --- microstrip detector --- power module --- negative gate-source voltage spike --- 4H-SiC, epitaxial layer --- Schottky barrier --- radiation detector --- point defects --- deep level transient spectroscopy (DLTS) --- thermally stimulated current spectroscopy (TSC) --- electron beam induced current spectroscopy (EBIC) --- pulse height spectroscopy (PHS) --- n/a --- Young's modulus

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

MEMS devices are found in many of today’s electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense.

Engineering --- Technology --- high-power impulse magnetron sputtering (HiPIMS) --- silicon carbide --- aluminum nitride --- thin film --- Rutherford backscattering spectrometry (RBS) --- grazing incidence X-ray diffraction (GIXRD) --- Raman spectroscopy --- 6H-SiC --- indentation --- deformation --- material removal mechanisms --- critical load --- 4H-SiC --- critical depth of cut --- Berkovich indenter --- cleavage strength --- nanoscratching --- power electronics --- high-temperature converters --- MEMS devices --- SiC power electronic devices --- neural interface --- neural probe --- neural implant --- microelectrode array --- MEA --- SiC --- 3C-SiC --- doped SiC --- n-type --- p-type --- amorphous SiC --- epitaxial growth --- electrochemical characterization --- MESFET --- simulation --- PAE --- bulk micromachining --- electrochemical etching --- circular membrane --- bulge test --- vibrometry --- mechanical properties --- Young's modulus --- residual stress --- FEM --- semiconductor radiation detector --- microstrip detector --- power module --- negative gate-source voltage spike --- 4H-SiC, epitaxial layer --- Schottky barrier --- radiation detector --- point defects --- deep level transient spectroscopy (DLTS) --- thermally stimulated current spectroscopy (TSC) --- electron beam induced current spectroscopy (EBIC) --- pulse height spectroscopy (PHS) --- History. --- high-power impulse magnetron sputtering (HiPIMS) --- silicon carbide --- aluminum nitride --- thin film --- Rutherford backscattering spectrometry (RBS) --- grazing incidence X-ray diffraction (GIXRD) --- Raman spectroscopy --- 6H-SiC --- indentation --- deformation --- material removal mechanisms --- critical load --- 4H-SiC --- critical depth of cut --- Berkovich indenter --- cleavage strength --- nanoscratching --- power electronics --- high-temperature converters --- MEMS devices --- SiC power electronic devices --- neural interface --- neural probe --- neural implant --- microelectrode array --- MEA --- SiC --- 3C-SiC --- doped SiC --- n-type --- p-type --- amorphous SiC --- epitaxial growth --- electrochemical characterization --- MESFET --- simulation --- PAE --- bulk micromachining --- electrochemical etching --- circular membrane --- bulge test --- vibrometry --- mechanical properties --- Young's modulus --- residual stress --- FEM --- semiconductor radiation detector --- microstrip detector --- power module --- negative gate-source voltage spike --- 4H-SiC, epitaxial layer --- Schottky barrier --- radiation detector --- point defects --- deep level transient spectroscopy (DLTS) --- thermally stimulated current spectroscopy (TSC) --- electron beam induced current spectroscopy (EBIC) --- pulse height spectroscopy (PHS)