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Since their emergence about ten years ago, perovskite solar cells show great promise. Indeed, they have achieved performances comparable to those of silicon cells and have good flexibility properties. However, their transparent conductive electrodes - transparent conductive oxides -, are not only composed of scarce elements but are also quite fragile. In the present work, silver nanowire networks will be suggested as a more viable alternative. For this purpose, the production process of perovskite solar cells will be analyzed step by step, allowing the identification of the stresses experienced by the cells. Similarly, silver nanowire networks will
be produced and characterized in order to determine what stresses they can withstand. It will be found that in the case of replacement, two main factors can cause problems: the high production temperatures of the cells and the low adhesion of the nanowire networks. Various solutions will be proposed for successful replacement.

perovskite --- solar --- cell --- transparent --- conductive --- material --- silver --- nanowire --- network --- TCM --- PSC --- TCO --- AgNW --- nanomaterial --- Physique, chimie, mathématiques & sciences de la terre > Physique

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The problem of solving complex engineering problems has always been a major topic in all industrial fields, such as aerospace, civil and mechanical engineering. The use of numerical methods has increased exponentially in the last few years, due to modern computers in the field of structural mechanics. Moreover, a wide range of numerical methods have been presented in the literature for solving such problems. Structural mechanics problems are dealt with using partial differential systems of equations that might be solved by following the two main classes of methods: Domain-decomposition methods or the so-called finite element methods and mesh-free methods where no decomposition is carried out. Both methodologies discretize a partial differential system into a set of algebraic equations that can be easily solved by computer implementation. The aim of the present Special Issue is to present a collection of recent works on these themes and a comparison of the novel advancements of both worlds in structural mechanics applications.

History of engineering & technology --- direction field --- tensor line --- principal stress --- tailored fiber placement --- heat conduction --- finite elements --- space-time --- elastodynamics --- mesh adaptation --- non-circular deep tunnel --- complex variables --- conformal mapping --- elasticity --- numerical simulation --- numerical modeling --- joint static strength --- finite element method --- parametric investigation --- reinforced joint (collar and doubler plate) --- nonlocal elasticity theory --- Galerkin weighted residual FEM --- silicon carbide nanowire --- silver nanowire --- gold nanowire --- biostructure --- rostrum --- paddlefish --- Polyodon spathula --- maximum-flow/minimum-cut --- stress patterns --- finite element modelling --- laminated composite plates --- non-uniform mechanical properties --- panel method --- marine propeller --- noise --- FW-H equations --- experimental test --- continuation methods --- bifurcations --- limit points --- cohesive elements --- functionally graded materials --- porosity distributions --- first-order shear deformation theory --- shear correction factor --- higher-order shear deformation theory --- equivalent single-layer approach --- direction field --- tensor line --- principal stress --- tailored fiber placement --- heat conduction --- finite elements --- space-time --- elastodynamics --- mesh adaptation --- non-circular deep tunnel --- complex variables --- conformal mapping --- elasticity --- numerical simulation --- numerical modeling --- joint static strength --- finite element method --- parametric investigation --- reinforced joint (collar and doubler plate) --- nonlocal elasticity theory --- Galerkin weighted residual FEM --- silicon carbide nanowire --- silver nanowire --- gold nanowire --- biostructure --- rostrum --- paddlefish --- Polyodon spathula --- maximum-flow/minimum-cut --- stress patterns --- finite element modelling --- laminated composite plates --- non-uniform mechanical properties --- panel method --- marine propeller --- noise --- FW-H equations --- experimental test --- continuation methods --- bifurcations --- limit points --- cohesive elements --- functionally graded materials --- porosity distributions --- first-order shear deformation theory --- shear correction factor --- higher-order shear deformation theory --- equivalent single-layer approach

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In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

History of engineering & technology --- random dopant --- drift-diffusion --- variability --- device simulation --- nanodevice --- screening --- Coulomb interaction --- III-V --- TASE --- MOSFETs --- Integration --- nanowire field-effect transistors --- silicon nanomaterials --- charge transport --- one-dimensional multi-subband scattering models --- Kubo–Greenwood formalism --- schrödinger-poisson solvers --- DC and AC characteristic fluctuations --- gate-all-around --- nanowire --- work function fluctuation --- aspect ratio of channel cross-section --- timing fluctuation --- noise margin fluctuation --- power fluctuation --- CMOS circuit --- statistical device simulation --- variability effects --- Monte Carlo --- Schrödinger based quantum corrections --- quantum modeling --- nonequilibrium Green’s function --- nanowire transistor --- electron–phonon interaction --- phonon–phonon interaction --- self-consistent Born approximation --- lowest order approximation --- Padé approximants --- Richardson extrapolation --- ZnO --- field effect transistor --- conduction mechanism --- metal gate --- material properties --- fabrication --- modelling --- nanojunction --- constriction --- quantum electron transport --- quantum confinement --- dimensionality reduction --- stochastic Schrödinger equations --- geometric correlations --- silicon nanowires --- nano-transistors --- quantum transport --- hot electrons --- self-cooling --- nano-cooling --- thermoelectricity --- heat equation --- non-equilibrium Green functions --- power dissipation

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In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

random dopant --- drift-diffusion --- variability --- device simulation --- nanodevice --- screening --- Coulomb interaction --- III-V --- TASE --- MOSFETs --- Integration --- nanowire field-effect transistors --- silicon nanomaterials --- charge transport --- one-dimensional multi-subband scattering models --- Kubo–Greenwood formalism --- schrödinger-poisson solvers --- DC and AC characteristic fluctuations --- gate-all-around --- nanowire --- work function fluctuation --- aspect ratio of channel cross-section --- timing fluctuation --- noise margin fluctuation --- power fluctuation --- CMOS circuit --- statistical device simulation --- variability effects --- Monte Carlo --- Schrödinger based quantum corrections --- quantum modeling --- nonequilibrium Green’s function --- nanowire transistor --- electron–phonon interaction --- phonon–phonon interaction --- self-consistent Born approximation --- lowest order approximation --- Padé approximants --- Richardson extrapolation --- ZnO --- field effect transistor --- conduction mechanism --- metal gate --- material properties --- fabrication --- modelling --- nanojunction --- constriction --- quantum electron transport --- quantum confinement --- dimensionality reduction --- stochastic Schrödinger equations --- geometric correlations --- silicon nanowires --- nano-transistors --- quantum transport --- hot electrons --- self-cooling --- nano-cooling --- thermoelectricity --- heat equation --- non-equilibrium Green functions --- power dissipation

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Silica and silicon-based nanostructures are now well-understood materials for which the technologies are mature. The most obvious applications, such as electronic devices, have been widely explored over the last two decades. The aim of this Special Issue is to bring together the state of the art in the field and to enable the emergence of new ideas and concepts for silicon and silica-based nanostructures.

Research & information: general --- Physics --- maize --- NPK --- SiO2-NPs --- productivity --- fertilizer --- mineral --- weevils --- LC50 --- toxicity --- mesoporous silica --- nanomaterials --- desulfurization --- fuel --- JP-8 --- black silicon --- light absorption enhanced --- micro-nano manufacturing --- nanometer surface --- nano-silica --- tricalcium aluminate --- pozzolanic reaction --- C-A-S-H gel --- silicon nanoparticles --- silicon nanowires --- synthesis --- high energy density --- lithium-ion batteries --- high-capacity anode --- VLS --- laser pyrolysis --- size effect --- shape effect --- biomass rice husk --- silicon --- nanocrystals --- luminescence --- high porosity --- pH sensor --- temperature sensor --- dual sensor --- metal-assisted chemical etching --- Si nanostructures --- high aspect ratio --- zone plate --- silicon nanowire --- nanowire array --- silicon anode --- n-type silicon anode --- Li-ion battery --- nanowires --- nanonets --- transistor --- integration process --- n/a --- Research. --- Physics.