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Book
Nanoscale Self-Assembly: Nanopatterning and Metrology
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Year: 2021 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

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Abstract

The self-assembly process underlies a plethora of natural phenomena from the macro to the nano scale. Often, technological development has found great inspiration in the natural world, as evidenced by numerous fabrication techniques based on self-assembly (SA). One striking example is given by epitaxial growths, in which atoms represent the building blocks. In lithography, the use of self-assembling materials is considered an extremely promising patterning option to overcome the size scale limitations imposed by the conventional photolithographic methods. To this purpose, in the last two decades several supramolecular self-assembling materials have been investigated and successfully applied to create patterns at a nanometric scale. Although considerable progress has been made so far in the control of self-assembly processes applied to nanolithography, a number of unresolved problems related to the reproducibility and metrology of the self-assembled features are still open. Addressing these issues is mandatory in order to allow the widespread diffusion of SA materials for applications such as microelectronics, photonics, or biology. In this context, the aim of the present Special Issue is to gather original research papers and comprehensive reviews covering various aspects of the self-assembly processes applied to nanopatterning. Topics include the development of novel SA methods, the realization of nanometric structures and devices, and the improvement of their long-range order. Moreover, metrology issues related to the nanoscale characterization of self-assembled structures are addressed.

Keywords

Technology: general issues --- block copolymer self-assembly --- analytical ultracentrifugation --- tannic acid --- 3D printing --- nano-resolution --- arbitrary distribution --- multimaterials --- deposition surface --- rapidity --- large scale --- conjugated polymers --- polyfullerenes --- processing by convective self-assembly --- thin films and microstructure --- photoluminescence quenching --- block copolymers --- self-assembly --- polymer interface --- nanostructure metrology --- line edge roughness LER --- (S)TEM --- STEM-EELS of PS and PMMA --- directed self-assembly --- nanospheres lithography --- colloidal nanospheres --- direct laser-writing --- directed self-assembly (DSA) --- block copolymers (BCPs) --- chemo-epitaxy --- polystyrene-block-polymethylmethacrylate (PS-b-PMMA) --- line/space patterning --- line edge roughness (LER) --- line width roughness (LWR) --- sequential infiltration synthesis --- block copolymer --- nanoparticles --- colloidal clusters --- colloidal molecules --- sedimentation --- separation --- classification of nanoparticles --- analytical centrifugation --- differential centrifugal sedimentation --- disk centrifuge --- density gradient centrifugation --- block copolymer self-assembly --- analytical ultracentrifugation --- tannic acid --- 3D printing --- nano-resolution --- arbitrary distribution --- multimaterials --- deposition surface --- rapidity --- large scale --- conjugated polymers --- polyfullerenes --- processing by convective self-assembly --- thin films and microstructure --- photoluminescence quenching --- block copolymers --- self-assembly --- polymer interface --- nanostructure metrology --- line edge roughness LER --- (S)TEM --- STEM-EELS of PS and PMMA --- directed self-assembly --- nanospheres lithography --- colloidal nanospheres --- direct laser-writing --- directed self-assembly (DSA) --- block copolymers (BCPs) --- chemo-epitaxy --- polystyrene-block-polymethylmethacrylate (PS-b-PMMA) --- line/space patterning --- line edge roughness (LER) --- line width roughness (LWR) --- sequential infiltration synthesis --- block copolymer --- nanoparticles --- colloidal clusters --- colloidal molecules --- sedimentation --- separation --- classification of nanoparticles --- analytical centrifugation --- differential centrifugal sedimentation --- disk centrifuge --- density gradient centrifugation


Book
Nanoscale Self-Assembly: Nanopatterning and Metrology
Author:
Year: 2021 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

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Abstract

The self-assembly process underlies a plethora of natural phenomena from the macro to the nano scale. Often, technological development has found great inspiration in the natural world, as evidenced by numerous fabrication techniques based on self-assembly (SA). One striking example is given by epitaxial growths, in which atoms represent the building blocks. In lithography, the use of self-assembling materials is considered an extremely promising patterning option to overcome the size scale limitations imposed by the conventional photolithographic methods. To this purpose, in the last two decades several supramolecular self-assembling materials have been investigated and successfully applied to create patterns at a nanometric scale. Although considerable progress has been made so far in the control of self-assembly processes applied to nanolithography, a number of unresolved problems related to the reproducibility and metrology of the self-assembled features are still open. Addressing these issues is mandatory in order to allow the widespread diffusion of SA materials for applications such as microelectronics, photonics, or biology. In this context, the aim of the present Special Issue is to gather original research papers and comprehensive reviews covering various aspects of the self-assembly processes applied to nanopatterning. Topics include the development of novel SA methods, the realization of nanometric structures and devices, and the improvement of their long-range order. Moreover, metrology issues related to the nanoscale characterization of self-assembled structures are addressed.


Book
Nanoscale Self-Assembly: Nanopatterning and Metrology
Author:
Year: 2021 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

Loading...
Export citation

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Bookmark

Abstract

The self-assembly process underlies a plethora of natural phenomena from the macro to the nano scale. Often, technological development has found great inspiration in the natural world, as evidenced by numerous fabrication techniques based on self-assembly (SA). One striking example is given by epitaxial growths, in which atoms represent the building blocks. In lithography, the use of self-assembling materials is considered an extremely promising patterning option to overcome the size scale limitations imposed by the conventional photolithographic methods. To this purpose, in the last two decades several supramolecular self-assembling materials have been investigated and successfully applied to create patterns at a nanometric scale. Although considerable progress has been made so far in the control of self-assembly processes applied to nanolithography, a number of unresolved problems related to the reproducibility and metrology of the self-assembled features are still open. Addressing these issues is mandatory in order to allow the widespread diffusion of SA materials for applications such as microelectronics, photonics, or biology. In this context, the aim of the present Special Issue is to gather original research papers and comprehensive reviews covering various aspects of the self-assembly processes applied to nanopatterning. Topics include the development of novel SA methods, the realization of nanometric structures and devices, and the improvement of their long-range order. Moreover, metrology issues related to the nanoscale characterization of self-assembled structures are addressed.


Book
Miniaturized Transistors
Authors: ---
ISBN: 3039210114 3039210106 Year: 2019 Publisher: MDPI - Multidisciplinary Digital Publishing Institute

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Abstract

What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

Keywords

MOSFET --- n/a --- total ionizing dose (TID) --- low power consumption --- process simulation --- two-dimensional material --- negative-capacitance --- power consumption --- technology computer aided design (TCAD) --- thin-film transistors (TFTs) --- band-to-band tunneling (BTBT) --- nanowires --- inversion channel --- metal oxide semiconductor field effect transistor (MOSFET) --- spike-timing-dependent plasticity (STDP) --- field effect transistor --- segregation --- systematic variations --- Sentaurus TCAD --- indium selenide --- nanosheets --- technology computer-aided design (TCAD) --- high-? dielectric --- subthreshold bias range --- statistical variations --- fin field effect transistor (FinFET) --- compact models --- non-equilibrium Green’s function --- etching simulation --- highly miniaturized transistor structure --- compact model --- silicon nanowire --- surface potential --- Silicon-Germanium source/drain (SiGe S/D) --- nanowire --- plasma-aided molecular beam epitaxy (MBE) --- phonon scattering --- mobility --- silicon-on-insulator --- drain engineered --- device simulation --- variability --- semi-floating gate --- synaptic transistor --- neuromorphic system --- theoretical model --- CMOS --- ferroelectrics --- tunnel field-effect transistor (TFET) --- SiGe --- metal gate granularity --- buried channel --- ON-state --- bulk NMOS devices --- ambipolar --- piezoelectrics --- tunnel field effect transistor (TFET) --- FinFETs --- polarization --- field-effect transistor --- line edge roughness --- random discrete dopants --- radiation hardened by design (RHBD) --- low energy --- flux calculation --- doping incorporation --- low voltage --- topography simulation --- MOS devices --- low-frequency noise --- high-k --- layout --- level set --- process variations --- subthreshold --- metal gate stack --- electrostatic discharge (ESD) --- non-equilibrium Green's function

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