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Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.

Technology: general issues --- GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity --- GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity

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Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.

Technology: general issues --- GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity --- n/a

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This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.

Technology: general issues --- silicon --- yolk−shell structure --- anode --- lithium-ion batteries --- in-plane nanowire --- site-controlled --- epitaxial growth --- germanium --- nanowire-based quantum devices --- HfO2/Si0.7Ge0.3 gate stack --- ozone oxidation --- Si-cap --- interface state density --- passivation --- GOI --- photodetectors --- dark current --- responsivity --- prussian blue nanoparticles --- organotrialkoxysilane --- silica beads --- arsenite --- arsenate --- water decontamination --- vertical gate-all-around (vGAA) --- digital etch --- quasi-atomic-layer etching (q-ALE) --- selective wet etching --- HNO3 concentration --- doping effect --- vertical Gate-all-around (vGAA) --- p+-Ge0.8Si0.2/Ge stack --- dual-selective wet etching --- atomic layer etching (ALE) --- stacked SiGe/Si --- epitaxial grown --- Fin etching --- FinFET --- short-term potentiation (STP) --- long-term potentiation (LTP) --- charge-trap synaptic transistor --- band-to-band tunneling --- pattern recognition --- neural network --- neuromorphic system --- Si-MOS --- quantum dot --- spin qubits --- quantum computing --- GeSn --- CVD --- lasers --- detectors --- transistors --- III-V on Si --- heteroepitaxy --- threading dislocation densities (TDDs) --- anti-phase boundaries (APBs) --- selective epitaxial growth (SEG) --- n/a

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• Reference Manager
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This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.

Technology: general issues --- silicon --- yolk−shell structure --- anode --- lithium-ion batteries --- in-plane nanowire --- site-controlled --- epitaxial growth --- germanium --- nanowire-based quantum devices --- HfO2/Si0.7Ge0.3 gate stack --- ozone oxidation --- Si-cap --- interface state density --- passivation --- GOI --- photodetectors --- dark current --- responsivity --- prussian blue nanoparticles --- organotrialkoxysilane --- silica beads --- arsenite --- arsenate --- water decontamination --- vertical gate-all-around (vGAA) --- digital etch --- quasi-atomic-layer etching (q-ALE) --- selective wet etching --- HNO3 concentration --- doping effect --- vertical Gate-all-around (vGAA) --- p+-Ge0.8Si0.2/Ge stack --- dual-selective wet etching --- atomic layer etching (ALE) --- stacked SiGe/Si --- epitaxial grown --- Fin etching --- FinFET --- short-term potentiation (STP) --- long-term potentiation (LTP) --- charge-trap synaptic transistor --- band-to-band tunneling --- pattern recognition --- neural network --- neuromorphic system --- Si-MOS --- quantum dot --- spin qubits --- quantum computing --- GeSn --- CVD --- lasers --- detectors --- transistors --- III-V on Si --- heteroepitaxy --- threading dislocation densities (TDDs) --- anti-phase boundaries (APBs) --- selective epitaxial growth (SEG) --- silicon --- yolk−shell structure --- anode --- lithium-ion batteries --- in-plane nanowire --- site-controlled --- epitaxial growth --- germanium --- nanowire-based quantum devices --- HfO2/Si0.7Ge0.3 gate stack --- ozone oxidation --- Si-cap --- interface state density --- passivation --- GOI --- photodetectors --- dark current --- responsivity --- prussian blue nanoparticles --- organotrialkoxysilane --- silica beads --- arsenite --- arsenate --- water decontamination --- vertical gate-all-around (vGAA) --- digital etch --- quasi-atomic-layer etching (q-ALE) --- selective wet etching --- HNO3 concentration --- doping effect --- vertical Gate-all-around (vGAA) --- p+-Ge0.8Si0.2/Ge stack --- dual-selective wet etching --- atomic layer etching (ALE) --- stacked SiGe/Si --- epitaxial grown --- Fin etching --- FinFET --- short-term potentiation (STP) --- long-term potentiation (LTP) --- charge-trap synaptic transistor --- band-to-band tunneling --- pattern recognition --- neural network --- neuromorphic system --- Si-MOS --- quantum dot --- spin qubits --- quantum computing --- GeSn --- CVD --- lasers --- detectors --- transistors --- III-V on Si --- heteroepitaxy --- threading dislocation densities (TDDs) --- anti-phase boundaries (APBs) --- selective epitaxial growth (SEG)