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The development of solid state gas sensors based on microtransducers and nanostructured sensing materials is the key point in the design of portable measurement systems able to reach sensing and identification performance comparable with analytical ones. In such a context several efforts must be spent of course in the development of the sensing material, but also in the choice of the transducer mechanism and its structure, in the electrical characterization of the performance and in the design of suitable measurement setups. This call for papers invites researchers worldwide to report about their novel results on the most recent advances and overview in design and measurements for applications in gas sensors, along with their relevant features and technological aspects. Original research papers are welcome (but not limited) on all aspects that focus on the most recent advances in: (i) basic principles and modeling of gas and VOCs sensors; (ii) new gas sensor principles and technologies; (iii) Characterization and measurements methodologies; (iv) transduction and sampling systems; (vi) package optimization; (vi) gas sensor based systems and applications.

indium oxide --- n/a --- environmental monitoring --- semiconductor --- gas sensor --- packed gas chromatographic column --- ultrathin carbon layer --- metal-oxide-semiconductor array sensor --- halitosis --- laser ablation --- capacitive micromachined ultrasonic transducers (CMUT) --- LTCC side via --- MEMS --- indirect packaging --- gas sensing --- efficiency --- bad breath --- electrospray --- array optimization --- low temperature co-fired ceramic (LTCC) --- electronic nose --- UV irradiation --- core/shell nanostructure --- combinatorial and high-throughput technique --- sensitive material --- hydrogen sulfide --- CO detection --- ZnO --- amperometric

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Despite its limitation in terms of surface covered area, the PLD technique still gathers interest among researchers by offering endless possibilities for tuning thin film composition and enhancing their properties of interest due to: (i) the easiness of a stoichiometric transfer even for very complex target materials, (ii) high adherence of the deposited structures to the substrate, (iii) controlled degree of phase, crystallinity, and thickness of deposited coatings, (iv) versatility of the experimental set-up which allows for simultaneous ablation of multiple targets resulting in combinatorial maps or consecutive ablation of multiple targets producing multi-layered structures, and (v) adjustment of the number of laser pulses, resulting in either a spread of nanoparticles, islands of materials or a complete covering of a surface. Moreover, a variation of PLD, known as Matrix Assisted Pulsed Laser Evaporation, allows for deposition of organic materials, ranging from polymers to proteins and even living cells, otherwise difficult to transfer unaltered in the form of thin films by other techniques. Furthermore, the use of laser light as transfer agent ensures purity of films and pulse-to-pulse deposition allows for an unprecedented control of film thickness at the nm level. This Special Issue is a collection of state-of-the art research papers and reviews in which the topics of interest are devoted to thin film synthesis by PLD and MAPLE, for numerous research and industry field applications, such as bio-active coatings for medical implants and hard, protective coatings for cutting and drilling tools withstanding high friction and elevated temperatures, sensors, solar cells, lithography, magnetic devices, energy-storage and conversion devices, controlled drug delivery and in situ microstructuring for boosting of surface properties.

thin films --- matrix-assisted pulsed laser evaporation --- shellac --- enteric coatings --- PLD --- ITO --- nanoimprint lithography --- coatings --- nanostructure --- iron oxide --- pulsed laser deposition --- aluminum nitride --- nanoindentation testing --- TEM imaging --- FTIR spectroscopy --- ellipsometry --- complex refractive index --- composite coatings --- MAPLE --- Lactoferrin --- macrophage interactions --- animal-origin calcium phosphate coatings --- natural hydroxyapatite --- doping --- high adherence --- pulsed laser deposition technique --- biomimetic applications --- target preparation --- room temperature ferromagnetism --- dilute magnetic semiconductor --- Indium oxide --- (InFe)2O3 --- PLD films --- energy storage --- thin-film electrodes --- thin-film solid electrolyte --- lithium microbatteries --- calcium phosphate-based coatings --- synthetic and natural hydroxyapatite --- in vivo testing --- biomedical applications --- n/a

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Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.

Technology: general issues --- History of engineering & technology --- Energy industries & utilities --- energy storage system --- power conditioning system --- silicon carbide --- vanadium redox flow batteries --- AlGaN/GaN --- SiC --- high electron mobility transistor --- Schottky barrier diode --- breakdown field --- noise --- charge traps --- radio frequency --- wide-bandgap (WBG) --- gallium nitride (GaN) --- silicon carbide (SiC) --- high electron mobility transistor (HEMT) --- metal-oxide-semiconductor field effect transistor (MOSFET) --- driving technology --- nickel oxide --- annealing temperature --- crystallite size --- optical band gap --- electrochromic device --- indium oxide thin film --- solution method --- plasma surface treatment --- bias stability --- aluminum nitride --- Schottky barrier diodes --- radio frequency sputtering --- X-ray diffraction --- X-ray photoelectron spectroscopy --- piezoelectric micromachined ultrasonic transducers --- ranging --- time of flight (TOF) --- time to digital converter circuit (TDC) --- AlGaN/GaN heterojunction --- p-GaN gate --- unidirectional operation --- rectifying electrode --- first-principles --- density functional theory --- pure β-Ga2O3 --- Sr-doped β-Ga2O3 --- p-type doping --- band structure --- density of states --- optical absorption --- AlN buffer layer --- NH3 growth interruption --- strain relaxation --- GaN-based LED --- low defect density --- gate bias modulation --- palladium catalyst --- gallium nitride --- nitrogen dioxide gas sensor --- laser micromachining --- sapphire --- AlGaN/GaN heterostructures --- high-electron mobility devices --- p-GaN gate HEMT --- normally off --- low-resistance SiC substrate --- temperature --- high electron-mobility transistor (HEMT) --- equivalent-circuit modeling --- microwave frequency --- scattering-parameter measurements --- GaN --- MIS-HEMTs --- fabrication --- threshold voltage stability --- supercritical technology --- GaN power HEMTs --- breakdown voltage --- current collapse --- compensation ratio --- auto-compensation --- carbon doping --- HVPE --- AlN --- high-temperature --- buffer layer --- nitridation --- high-electron mobility transistor --- heterogeneous integration --- SOI --- QST --- crystal growth --- cubic and hexagonal structure --- blue and yellow luminescence --- electron lifetime --- wafer dicing --- stealth dicing --- laser thermal separation --- dry processing --- laser processing --- wide bandgap semiconductor --- photovoltaic module --- digital signal processor --- synchronous buck converter --- polar --- semi-polar --- non-polar --- magnetron sputtering --- HTA --- GaN-HEMT mesa structures --- 2DEG --- X-ray sensor --- X-ray imaging --- energy storage system --- power conditioning system --- silicon carbide --- vanadium redox flow batteries --- AlGaN/GaN --- SiC --- high electron mobility transistor --- Schottky barrier diode --- breakdown field --- noise --- charge traps --- radio frequency --- wide-bandgap (WBG) --- gallium nitride (GaN) --- silicon carbide (SiC) --- high electron mobility transistor (HEMT) --- metal-oxide-semiconductor field effect transistor (MOSFET) --- driving technology --- nickel oxide --- annealing temperature --- crystallite size --- optical band gap --- electrochromic device --- indium oxide thin film --- solution method --- plasma surface treatment --- bias stability --- aluminum nitride --- Schottky barrier diodes --- radio frequency sputtering --- X-ray diffraction --- X-ray photoelectron spectroscopy --- piezoelectric micromachined ultrasonic transducers --- ranging --- time of flight (TOF) --- time to digital converter circuit (TDC) --- AlGaN/GaN heterojunction --- p-GaN gate --- unidirectional operation --- rectifying electrode --- first-principles --- density functional theory --- pure β-Ga2O3 --- Sr-doped β-Ga2O3 --- p-type doping --- band structure --- density of states --- optical absorption --- AlN buffer layer --- NH3 growth interruption --- strain relaxation --- GaN-based LED --- low defect density --- gate bias modulation --- palladium catalyst --- gallium nitride --- nitrogen dioxide gas sensor --- laser micromachining --- sapphire --- AlGaN/GaN heterostructures --- high-electron mobility devices --- p-GaN gate HEMT --- normally off --- low-resistance SiC substrate --- temperature --- high electron-mobility transistor (HEMT) --- equivalent-circuit modeling --- microwave frequency --- scattering-parameter measurements --- GaN --- MIS-HEMTs --- fabrication --- threshold voltage stability --- supercritical technology --- GaN power HEMTs --- breakdown voltage --- current collapse --- compensation ratio --- auto-compensation --- carbon doping --- HVPE --- AlN --- high-temperature --- buffer layer --- nitridation --- high-electron mobility transistor --- heterogeneous integration --- SOI --- QST --- crystal growth --- cubic and hexagonal structure --- blue and yellow luminescence --- electron lifetime --- wafer dicing --- stealth dicing --- laser thermal separation --- dry processing --- laser processing --- wide bandgap semiconductor --- photovoltaic module --- digital signal processor --- synchronous buck converter --- polar --- semi-polar --- non-polar --- magnetron sputtering --- HTA --- GaN-HEMT mesa structures --- 2DEG --- X-ray sensor --- X-ray imaging

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Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.

energy storage system --- power conditioning system --- silicon carbide --- vanadium redox flow batteries --- AlGaN/GaN --- SiC --- high electron mobility transistor --- Schottky barrier diode --- breakdown field --- noise --- charge traps --- radio frequency --- wide-bandgap (WBG) --- gallium nitride (GaN) --- silicon carbide (SiC) --- high electron mobility transistor (HEMT) --- metal-oxide-semiconductor field effect transistor (MOSFET) --- driving technology --- nickel oxide --- annealing temperature --- crystallite size --- optical band gap --- electrochromic device --- indium oxide thin film --- solution method --- plasma surface treatment --- bias stability --- aluminum nitride --- Schottky barrier diodes --- radio frequency sputtering --- X-ray diffraction --- X-ray photoelectron spectroscopy --- piezoelectric micromachined ultrasonic transducers --- ranging --- time of flight (TOF) --- time to digital converter circuit (TDC) --- AlGaN/GaN heterojunction --- p-GaN gate --- unidirectional operation --- rectifying electrode --- first-principles --- density functional theory --- pure β-Ga2O3 --- Sr-doped β-Ga2O3 --- p-type doping --- band structure --- density of states --- optical absorption --- AlN buffer layer --- NH3 growth interruption --- strain relaxation --- GaN-based LED --- low defect density --- gate bias modulation --- palladium catalyst --- gallium nitride --- nitrogen dioxide gas sensor --- laser micromachining --- sapphire --- AlGaN/GaN heterostructures --- high-electron mobility devices --- p-GaN gate HEMT --- normally off --- low-resistance SiC substrate --- temperature --- high electron-mobility transistor (HEMT) --- equivalent-circuit modeling --- microwave frequency --- scattering-parameter measurements --- GaN --- MIS-HEMTs --- fabrication --- threshold voltage stability --- supercritical technology --- GaN power HEMTs --- breakdown voltage --- current collapse --- compensation ratio --- auto-compensation --- carbon doping --- HVPE --- AlN --- high-temperature --- buffer layer --- nitridation --- high-electron mobility transistor --- heterogeneous integration --- SOI --- QST --- crystal growth --- cubic and hexagonal structure --- blue and yellow luminescence --- electron lifetime --- wafer dicing --- stealth dicing --- laser thermal separation --- dry processing --- laser processing --- wide bandgap semiconductor --- photovoltaic module --- digital signal processor --- synchronous buck converter --- polar --- semi-polar --- non-polar --- magnetron sputtering --- HTA --- GaN-HEMT mesa structures --- 2DEG --- X-ray sensor --- X-ray imaging --- n/a