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Metal-assisted chemical etching (MacEtch) has recently emerged as a new etching technique capable of fabricating high aspect ratio nano- and microstructures in a few semiconductors substrates—Si, Ge, poly-Si, GaAs, and SiC—and using different catalysts—Ag, Au, Pt, Pd, Cu, Ni, and Rh. Several shapes have been demonstrated with a high anisotropy and feature size in the nanoscale—nanoporous films, nanowires, 3D objects, and trenches, which are useful components of photonic devices, microfluidic devices, bio-medical devices, batteries, Vias, MEMS, X-ray optics, etc. With no limitations of large-areas and low-cost processing, MacEtch can open up new opportunities for several applications where high precision nano- and microfabrication is required. This can make semiconductor manufacturing more accessible to researchers in various fields, and accelerate innovation in electronics, bio-medical engineering, energy, and photonics. Accordingly, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on novel methodological developments in MacEtch, and its use for various applications.

porous silicon --- Pd nanoparticles-assisted chemical etching --- etching rate --- ethanol electrooxidation --- X-ray diffractive optics --- zone plate --- high aspect ratio nanostructures --- metal-assisted chemical etching --- electroless deposition --- Al2O3 nanotube --- ultra-high aspect ratio --- gold (Au) metal assisted chemical etching --- atomic layer deposition --- anisotropic dry etching --- silicon cones --- metal assisted chemical etching --- transversal pores --- antireflection --- black GaAs --- photon recycling --- X-ray grating interferometry --- catalyst --- silicon --- gold electroplating --- magnetically guided metal-assisted chemical etching --- bulk Si etching --- curved Si structure --- catalyst encapsulation --- n/a

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Metal-assisted chemical etching (MacEtch) has recently emerged as a new etching technique capable of fabricating high aspect ratio nano- and microstructures in a few semiconductors substrates—Si, Ge, poly-Si, GaAs, and SiC—and using different catalysts—Ag, Au, Pt, Pd, Cu, Ni, and Rh. Several shapes have been demonstrated with a high anisotropy and feature size in the nanoscale—nanoporous films, nanowires, 3D objects, and trenches, which are useful components of photonic devices, microfluidic devices, bio-medical devices, batteries, Vias, MEMS, X-ray optics, etc. With no limitations of large-areas and low-cost processing, MacEtch can open up new opportunities for several applications where high precision nano- and microfabrication is required. This can make semiconductor manufacturing more accessible to researchers in various fields, and accelerate innovation in electronics, bio-medical engineering, energy, and photonics. Accordingly, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on novel methodological developments in MacEtch, and its use for various applications.

History of engineering & technology --- porous silicon --- Pd nanoparticles-assisted chemical etching --- etching rate --- ethanol electrooxidation --- X-ray diffractive optics --- zone plate --- high aspect ratio nanostructures --- metal-assisted chemical etching --- electroless deposition --- Al2O3 nanotube --- ultra-high aspect ratio --- gold (Au) metal assisted chemical etching --- atomic layer deposition --- anisotropic dry etching --- silicon cones --- metal assisted chemical etching --- transversal pores --- antireflection --- black GaAs --- photon recycling --- X-ray grating interferometry --- catalyst --- silicon --- gold electroplating --- magnetically guided metal-assisted chemical etching --- bulk Si etching --- curved Si structure --- catalyst encapsulation --- porous silicon --- Pd nanoparticles-assisted chemical etching --- etching rate --- ethanol electrooxidation --- X-ray diffractive optics --- zone plate --- high aspect ratio nanostructures --- metal-assisted chemical etching --- electroless deposition --- Al2O3 nanotube --- ultra-high aspect ratio --- gold (Au) metal assisted chemical etching --- atomic layer deposition --- anisotropic dry etching --- silicon cones --- metal assisted chemical etching --- transversal pores --- antireflection --- black GaAs --- photon recycling --- X-ray grating interferometry --- catalyst --- silicon --- gold electroplating --- magnetically guided metal-assisted chemical etching --- bulk Si etching --- curved Si structure --- catalyst encapsulation

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This Special Issue “Characterization of Nanomaterials” collects nine selected papers presented at the 6th Dresden Nanoanalysis Symposium, held at Fraunhofer Institute for Ceramic Technologies and Systems in Dresden, Germany, on 31 August 2018. Following the specific motto of this annual symposium “Materials challenges—Micro- and nanoscale characterization”, it covered various topics of nanoscale materials characterization along the whole value and innovation chain, from fundamental research up to industrial applications. The scope of this Special Issue is to provide an overview of the current status, recent developments and research activities in the field of nanoscale materials characterization, with a particular emphasis on future scenarios. Primarily, analytical techniques for the characterization of thin films and nanostructures are discussed, including modeling and simulation. We anticipate that this Special Issue will be accessible to a wide audience, as it explores not only methodical aspects of nanoscale materials characterization, but also materials synthesis, fabrication of devices and applications.

physical vapor deposition --- magnetron sputtering --- AlN/Al coating --- silicon substrate --- residual stresses --- wafer curvature method --- nanoscale residual stress profiling --- indentation failure modes --- nanoindentation adhesion --- intermetallic phases --- growth kinetics --- Al–Ni system --- zinc oxide --- nanoparticles --- paper transistors --- printed electronics --- electrolyte-gated transistors --- microwave synthesis --- oxide dissociation --- doping --- rare earth ions --- upconversion --- liquid alloys --- 2D materials --- thin films --- Ga–Sn–Zn alloys --- gallium alloys --- nanoanalysis --- lithium-ion --- nickel–manganese–cobalt oxide (NMC) --- leaching --- recycling --- recover --- degradation --- SEM-EDX --- Raman spectroscopy --- resistive switching memories --- multi-level cell --- copper oxide --- grain boundaries --- aluminum oxide --- p-type TFT --- p-type oxide semiconductors --- SnO electrical properties --- oxide structure analysis --- ToF-SIMS 3D imaging --- compositional depth profiling --- high aspect ratio (HAR) structures --- silicon doped hafnium oxide (HSO) ALD deposition --- lateral high aspect ratio (LHAR) --- ToF-SIMS analysis --- n/a --- Al-Ni system --- Ga-Sn-Zn alloys --- nickel-manganese-cobalt oxide (NMC)

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The detection and quantification of with high precision nucleic acid biomarkers and protein biomarkers in resource-limited settings is key to the early diagnosis of diseases and for monitoring the effects of treatments. As there is an enormous demand for high-quality biomarker detection platforms that are robust and highly applicable in resource-limited settings, this book is devoted to exploring methods for detection and quantification of biomarkers, focusing on the recent advances in this field.

Research & information: general --- SERS --- LPS --- bacteria --- endotoxin --- lipid A --- silver nanorods --- creatinine --- ZnO nanowires --- piezo-enzymatic-reaction effect --- self-powered biosensor --- immunosensors --- electrochemical immunosensors --- biosensors --- voltammetric immunosensors --- amperometric immunosensors --- impedimetric immunosensors --- eletrochemiluminescent immunosensors --- cysteine --- biothiols --- cystinuria --- portable --- fluorimeter --- bio-imaging --- cancer --- bladder cancer --- prostate cancer --- urinary biomarkers --- urinary VOCs --- machine olfaction --- GC-IMS --- GC-TOF-MS --- cancer markers --- immune checkpoints --- PD-1 --- PD-L1 --- high-aspect-ratio microfluidic channel --- parallelogram cross-section --- monodisperse droplet --- droplet generation

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This Special Issue “Characterization of Nanomaterials” collects nine selected papers presented at the 6th Dresden Nanoanalysis Symposium, held at Fraunhofer Institute for Ceramic Technologies and Systems in Dresden, Germany, on 31 August 2018. Following the specific motto of this annual symposium “Materials challenges—Micro- and nanoscale characterization”, it covered various topics of nanoscale materials characterization along the whole value and innovation chain, from fundamental research up to industrial applications. The scope of this Special Issue is to provide an overview of the current status, recent developments and research activities in the field of nanoscale materials characterization, with a particular emphasis on future scenarios. Primarily, analytical techniques for the characterization of thin films and nanostructures are discussed, including modeling and simulation. We anticipate that this Special Issue will be accessible to a wide audience, as it explores not only methodical aspects of nanoscale materials characterization, but also materials synthesis, fabrication of devices and applications.

Technology: general issues --- physical vapor deposition --- magnetron sputtering --- AlN/Al coating --- silicon substrate --- residual stresses --- wafer curvature method --- nanoscale residual stress profiling --- indentation failure modes --- nanoindentation adhesion --- intermetallic phases --- growth kinetics --- Al-Ni system --- zinc oxide --- nanoparticles --- paper transistors --- printed electronics --- electrolyte-gated transistors --- microwave synthesis --- oxide dissociation --- doping --- rare earth ions --- upconversion --- liquid alloys --- 2D materials --- thin films --- Ga-Sn-Zn alloys --- gallium alloys --- nanoanalysis --- lithium-ion --- nickel-manganese-cobalt oxide (NMC) --- leaching --- recycling --- recover --- degradation --- SEM-EDX --- Raman spectroscopy --- resistive switching memories --- multi-level cell --- copper oxide --- grain boundaries --- aluminum oxide --- p-type TFT --- p-type oxide semiconductors --- SnO electrical properties --- oxide structure analysis --- ToF-SIMS 3D imaging --- compositional depth profiling --- high aspect ratio (HAR) structures --- silicon doped hafnium oxide (HSO) ALD deposition --- lateral high aspect ratio (LHAR) --- ToF-SIMS analysis --- physical vapor deposition --- magnetron sputtering --- AlN/Al coating --- silicon substrate --- residual stresses --- wafer curvature method --- nanoscale residual stress profiling --- indentation failure modes --- nanoindentation adhesion --- intermetallic phases --- growth kinetics --- Al-Ni system --- zinc oxide --- nanoparticles --- paper transistors --- printed electronics --- electrolyte-gated transistors --- microwave synthesis --- oxide dissociation --- doping --- rare earth ions --- upconversion --- liquid alloys --- 2D materials --- thin films --- Ga-Sn-Zn alloys --- gallium alloys --- nanoanalysis --- lithium-ion --- nickel-manganese-cobalt oxide (NMC) --- leaching --- recycling --- recover --- degradation --- SEM-EDX --- Raman spectroscopy --- resistive switching memories --- multi-level cell --- copper oxide --- grain boundaries --- aluminum oxide --- p-type TFT --- p-type oxide semiconductors --- SnO electrical properties --- oxide structure analysis --- ToF-SIMS 3D imaging --- compositional depth profiling --- high aspect ratio (HAR) structures --- silicon doped hafnium oxide (HSO) ALD deposition --- lateral high aspect ratio (LHAR) --- ToF-SIMS analysis