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The open access journal Micromachines invites manuscript submissions for the Special Issue “Silicon Photonics Bloom”. The past two decades have witnessed a tremendous growth of silicon photonics. Lab-scale research on simple passive component designs is now being expanded by on-chip hybrid systems architectures. With the recent injection of government and private funding, we are living the 1980s of the electronic industry, when the first merchant foundries were established. Soon, we will see more and more merchant foundries proposing well-established electronic design tools, product development kits, and mature component libraries. The open access journal Micromachines invites the submission of manuscripts in the developing area of silicon photonics. The goal of this Special Issue is to highlight the recent developments in this cutting-edge technology.]

History of engineering & technology --- quantum dot --- silicon nanocrystals --- light emitting diode --- vertical grating coupler --- WDM transmitter --- optical interconnects --- silicon photonics --- silicon optical modulator --- Silicon Photonics --- off-chip coupling --- polarisation controller --- integrated polarimeter --- polarisation multiplexing --- polarisation shift keying --- germanium --- integrated optics --- optoelectronics --- photoconductivity --- terahertz --- frequency combs --- heterogeneous integration --- second-harmonic generation --- supercontinuum --- integrated photonics --- mode-locked lasers --- nonlinear optics --- microelectromechanical systems (MEMS) --- electrostatic actuator --- parallel plate actuation --- optical switch --- silicon-on-insulator (SOI) --- micro-platform --- optical waveguide --- silicon nitride photonics --- phase change material --- integrated silicon photonic circuits --- nanophononics --- modulator --- multimode interferometer --- photonics integrated circuit --- carrier plasma --- Mach–Zehnder interferometers --- silicon oxynitride --- thin film --- photoluminescence --- chemical vapor deposition --- physical vapor deposition --- dispersion control --- Bragg gratings --- photonic processors --- unitary transformation --- amorphous silicon oxycarbide --- nitrogen doping --- defect --- plasma enhanced chemical vapor deposition --- n/a --- Mach-Zehnder interferometers

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The open access journal Micromachines invites manuscript submissions for the Special Issue “Silicon Photonics Bloom”. The past two decades have witnessed a tremendous growth of silicon photonics. Lab-scale research on simple passive component designs is now being expanded by on-chip hybrid systems architectures. With the recent injection of government and private funding, we are living the 1980s of the electronic industry, when the first merchant foundries were established. Soon, we will see more and more merchant foundries proposing well-established electronic design tools, product development kits, and mature component libraries. The open access journal Micromachines invites the submission of manuscripts in the developing area of silicon photonics. The goal of this Special Issue is to highlight the recent developments in this cutting-edge technology.]

History of engineering & technology --- quantum dot --- silicon nanocrystals --- light emitting diode --- vertical grating coupler --- WDM transmitter --- optical interconnects --- silicon photonics --- silicon optical modulator --- Silicon Photonics --- off-chip coupling --- polarisation controller --- integrated polarimeter --- polarisation multiplexing --- polarisation shift keying --- germanium --- integrated optics --- optoelectronics --- photoconductivity --- terahertz --- frequency combs --- heterogeneous integration --- second-harmonic generation --- supercontinuum --- integrated photonics --- mode-locked lasers --- nonlinear optics --- microelectromechanical systems (MEMS) --- electrostatic actuator --- parallel plate actuation --- optical switch --- silicon-on-insulator (SOI) --- micro-platform --- optical waveguide --- silicon nitride photonics --- phase change material --- integrated silicon photonic circuits --- nanophononics --- modulator --- multimode interferometer --- photonics integrated circuit --- carrier plasma --- Mach-Zehnder interferometers --- silicon oxynitride --- thin film --- photoluminescence --- chemical vapor deposition --- physical vapor deposition --- dispersion control --- Bragg gratings --- photonic processors --- unitary transformation --- amorphous silicon oxycarbide --- nitrogen doping --- defect --- plasma enhanced chemical vapor deposition

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This Special Issue introduces recent research results on MEMS packaging and 3D integration whose subjects can be divided as follow; three papers on biocompatible implantable packaging, three papers on interconnect, three papers on bonding technologies, one paper on vacuum packaging, and three papers on modeling and simulation.

heterogeneous integration --- wafer bonding --- wafer sealing --- room-temperature bonding --- Au-Au bonding --- surface activated bonding --- Au film thickness --- surface roughness --- microelectromechanical systems (MEMS) packaging --- inkjet printing --- redistribution layers --- capacitive micromachined ultrasound transducers (CMUT) --- fan-out wafer-level packaging (FOWLP) --- adhesion --- thin film metal --- parylene --- neural probe --- scotch tape test --- FEM --- MEMS resonator --- temperature coefficient --- thermal stress --- millimeter-wave --- redundant TSV --- equivalent circuit model --- S-parameters extraction --- technology evaluation --- MEMS and IC integration --- MCDM --- fuzzy AHP --- fuzzy VIKOR --- fan-out wafer-level package --- finite element --- glass substrate --- reliability life --- packaging-on-packaging --- thermal sensors --- TMOS sensor --- finite difference time domain --- optical and electromagnetics simulations --- finite element analysis --- ultrasonic bonding --- metal direct bonding --- microsystem integration --- biocompatible packaging --- implantable --- reliability --- Finite element method (FEM) --- simulation --- multilayer reactive bonding --- integrated nanostructure-multilayer reactive system --- spontaneous self-ignition --- self-propagating exothermic reaction --- Pd/Al reactive multilayer system --- Ni/Al reactive multilayer system --- low-temperature MEMS packaging --- crack propagation --- microbump --- deflection angle --- stress intensity factor (SIF) --- polymer packaging --- neural interface --- chronic implantation --- n/a

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Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.

Technology: general issues --- History of engineering & technology --- Energy industries & utilities --- energy storage system --- power conditioning system --- silicon carbide --- vanadium redox flow batteries --- AlGaN/GaN --- SiC --- high electron mobility transistor --- Schottky barrier diode --- breakdown field --- noise --- charge traps --- radio frequency --- wide-bandgap (WBG) --- gallium nitride (GaN) --- silicon carbide (SiC) --- high electron mobility transistor (HEMT) --- metal-oxide-semiconductor field effect transistor (MOSFET) --- driving technology --- nickel oxide --- annealing temperature --- crystallite size --- optical band gap --- electrochromic device --- indium oxide thin film --- solution method --- plasma surface treatment --- bias stability --- aluminum nitride --- Schottky barrier diodes --- radio frequency sputtering --- X-ray diffraction --- X-ray photoelectron spectroscopy --- piezoelectric micromachined ultrasonic transducers --- ranging --- time of flight (TOF) --- time to digital converter circuit (TDC) --- AlGaN/GaN heterojunction --- p-GaN gate --- unidirectional operation --- rectifying electrode --- first-principles --- density functional theory --- pure β-Ga2O3 --- Sr-doped β-Ga2O3 --- p-type doping --- band structure --- density of states --- optical absorption --- AlN buffer layer --- NH3 growth interruption --- strain relaxation --- GaN-based LED --- low defect density --- gate bias modulation --- palladium catalyst --- gallium nitride --- nitrogen dioxide gas sensor --- laser micromachining --- sapphire --- AlGaN/GaN heterostructures --- high-electron mobility devices --- p-GaN gate HEMT --- normally off --- low-resistance SiC substrate --- temperature --- high electron-mobility transistor (HEMT) --- equivalent-circuit modeling --- microwave frequency --- scattering-parameter measurements --- GaN --- MIS-HEMTs --- fabrication --- threshold voltage stability --- supercritical technology --- GaN power HEMTs --- breakdown voltage --- current collapse --- compensation ratio --- auto-compensation --- carbon doping --- HVPE --- AlN --- high-temperature --- buffer layer --- nitridation --- high-electron mobility transistor --- heterogeneous integration --- SOI --- QST --- crystal growth --- cubic and hexagonal structure --- blue and yellow luminescence --- electron lifetime --- wafer dicing --- stealth dicing --- laser thermal separation --- dry processing --- laser processing --- wide bandgap semiconductor --- photovoltaic module --- digital signal processor --- synchronous buck converter --- polar --- semi-polar --- non-polar --- magnetron sputtering --- HTA --- GaN-HEMT mesa structures --- 2DEG --- X-ray sensor --- X-ray imaging --- n/a

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Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.

Technology: general issues --- History of engineering & technology --- Energy industries & utilities --- energy storage system --- power conditioning system --- silicon carbide --- vanadium redox flow batteries --- AlGaN/GaN --- SiC --- high electron mobility transistor --- Schottky barrier diode --- breakdown field --- noise --- charge traps --- radio frequency --- wide-bandgap (WBG) --- gallium nitride (GaN) --- silicon carbide (SiC) --- high electron mobility transistor (HEMT) --- metal-oxide-semiconductor field effect transistor (MOSFET) --- driving technology --- nickel oxide --- annealing temperature --- crystallite size --- optical band gap --- electrochromic device --- indium oxide thin film --- solution method --- plasma surface treatment --- bias stability --- aluminum nitride --- Schottky barrier diodes --- radio frequency sputtering --- X-ray diffraction --- X-ray photoelectron spectroscopy --- piezoelectric micromachined ultrasonic transducers --- ranging --- time of flight (TOF) --- time to digital converter circuit (TDC) --- AlGaN/GaN heterojunction --- p-GaN gate --- unidirectional operation --- rectifying electrode --- first-principles --- density functional theory --- pure β-Ga2O3 --- Sr-doped β-Ga2O3 --- p-type doping --- band structure --- density of states --- optical absorption --- AlN buffer layer --- NH3 growth interruption --- strain relaxation --- GaN-based LED --- low defect density --- gate bias modulation --- palladium catalyst --- gallium nitride --- nitrogen dioxide gas sensor --- laser micromachining --- sapphire --- AlGaN/GaN heterostructures --- high-electron mobility devices --- p-GaN gate HEMT --- normally off --- low-resistance SiC substrate --- temperature --- high electron-mobility transistor (HEMT) --- equivalent-circuit modeling --- microwave frequency --- scattering-parameter measurements --- GaN --- MIS-HEMTs --- fabrication --- threshold voltage stability --- supercritical technology --- GaN power HEMTs --- breakdown voltage --- current collapse --- compensation ratio --- auto-compensation --- carbon doping --- HVPE --- AlN --- high-temperature --- buffer layer --- nitridation --- high-electron mobility transistor --- heterogeneous integration --- SOI --- QST --- crystal growth --- cubic and hexagonal structure --- blue and yellow luminescence --- electron lifetime --- wafer dicing --- stealth dicing --- laser thermal separation --- dry processing --- laser processing --- wide bandgap semiconductor --- photovoltaic module --- digital signal processor --- synchronous buck converter --- polar --- semi-polar --- non-polar --- magnetron sputtering --- HTA --- GaN-HEMT mesa structures --- 2DEG --- X-ray sensor --- X-ray imaging