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Grain boundaries --- Semiconductors --- Congresses
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This thesis explores the fundamental processes involved in thin film growth, focusing on the origin of compressive stress and the dynamics during the early growth stages. Key topics include the correlation between compressive stress and grain boundary densification in molybdenum films, the effects of pulsed deposition fluxes, and the role of energetic argon ions in high power impulse magnetron sputtering (HiPIMS). The research demonstrates that compressive stresses originate from grain boundaries due to atom insertion, and that increasing the flux modulation frequency can reduce the thickness required for continuous film formation. The study utilizes a combination of in situ real-time measurements, ex situ imaging, and kinetic Monte Carlo simulations to analyze these phenomena. Intended for a scientific audience, particularly those interested in materials science and thin film technology, the work provides insights into improving film density and reducing defects through advanced deposition techniques.
Thin films. --- Grain boundaries. --- Thin films --- Grain boundaries
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The present volume contains 175 selected papers from the 4th International Conference on Ultrafine-Grained and Nano-structured Materials (UFGNSM2013). This is the fourth biennial conference in UFGNSM series, jointly organized by Center of Excellence for High Performance Materials (CEHPM), University of Tehran, IRAN and University of Patras, GREECE. This volume presents a selection of papers submitted to the conference from universities and industries. These papers cover various aspects of ultrafine grained and nanostructured materials including: novel approaches to produce ultrafine grained an
Metallography --- Nanostructured materials --- Grain boundaries
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GRAIN BOUNDARIES --- Monograph --- Grain boundaries. --- Crystal grain boundaries --- Crystal growth --- Dislocations in crystals --- Twinning (Crystallography)
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