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The atmospheric mutual coherence function from the first and second rytov approximations and its comparison to that of strong fluctuation theory
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Year: 2011 Publisher: Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center,

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Fluctuation Relations and Nonequilibrium Thermodynamics in Classical and Quantum Systems
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Year: 2020 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

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This Special Issue contains novel results in the area of out-of-equilibrium classical and quantum thermodynamics. Contributions are from different areas of physics, including statistical mechanics, quantum information and many-body systems.

Keywords

History of engineering & technology --- quantum Otto engine --- Curzon–Ahlborn efficiency --- endoreversible quantum thermodynamics --- large deviations --- phase transitions --- condensation of fluctuations --- fluctuation relations --- magnetic cycle --- quantum otto cycle --- quantum thermodynamics --- quantum heat engines --- nonequilibrium systems --- ergotropy --- quantum correlations --- information thermodynamics --- collision model --- thermalization --- many-body quantum systems --- fluctuation relation --- Crooks equality --- coherence --- athermality --- photon added thermal state --- photon subtracted thermal state --- binomial states --- generalised coherent states --- laser cooling --- cavitation --- sonoluminescence --- fluctuation theorems --- collisional models --- quantum Otto engine --- Curzon–Ahlborn efficiency --- endoreversible quantum thermodynamics --- large deviations --- phase transitions --- condensation of fluctuations --- fluctuation relations --- magnetic cycle --- quantum otto cycle --- quantum thermodynamics --- quantum heat engines --- nonequilibrium systems --- ergotropy --- quantum correlations --- information thermodynamics --- collision model --- thermalization --- many-body quantum systems --- fluctuation relation --- Crooks equality --- coherence --- athermality --- photon added thermal state --- photon subtracted thermal state --- binomial states --- generalised coherent states --- laser cooling --- cavitation --- sonoluminescence --- fluctuation theorems --- collisional models


Book
Fluctuation Relations and Nonequilibrium Thermodynamics in Classical and Quantum Systems
Author:
Year: 2020 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

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Abstract

This Special Issue contains novel results in the area of out-of-equilibrium classical and quantum thermodynamics. Contributions are from different areas of physics, including statistical mechanics, quantum information and many-body systems.


Book
Fluctuation Relations and Nonequilibrium Thermodynamics in Classical and Quantum Systems
Author:
Year: 2020 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

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Abstract

This Special Issue contains novel results in the area of out-of-equilibrium classical and quantum thermodynamics. Contributions are from different areas of physics, including statistical mechanics, quantum information and many-body systems.


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Les fluctuations economiques
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ISBN: 2130391257 9782130391258 Year: 1986 Volume: 2253 Publisher: Paris : PUF - Presses Universitaires de France,


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Symptom fluctuation in fibromyalgia : environmental, psychological and psychobiological influences
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ISBN: 3110313804 9783110313802 9783110313734 3110313731 Year: 2014 Publisher: Berlin : Walter de Gruyter GmbH & Co. KG,

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Fibromyalgia is a syndrome of wide spread pain that is known from all parts of the world. An aspect of the syndrome of fibromyalgia is fluctuation as in onset of pain, variation in the level of symptoms, time off from pain and recovery from pain and other symptoms. The analysis of these fluctuations might create a basis for solid suggestions regarding the nature of the syn-drome itself. E.g. the pain level is well known to vary with mental and physical load including exposure to cold. Simultaneously, fibromyalgia has been found to mean an altered balance in the autonomic nervous system. In the first section of the book a developmental stage or life before fibromyalgia is covered. Intra- and interpersonal patterns based on narrations of the afflicted are pictured. Identified patterns are psychometrically examined and environmental as well as psychobiological patterns are accounted for. In the mid-section of the book life with fibromyalgia is scrutinized including biomarkers. Patterns regarding variation in the level of pain, gaps in fibromyalgia pain and environmental factors influencing these gaps are related. The effect on life, symptoms and defense measures is elucidated from the angle of mental load. The last sections portrait psychological and environmental influences concerning recovery, but especially the striking phenomenon of recovery being scarce. Special attention is paid to cognitive-emotional functioning, the need to target dissociation and environmental influences on maintenance.


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Nanowire Field-Effect Transistor (FET)
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Year: 2021 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

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In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

Keywords

History of engineering & technology --- random dopant --- drift-diffusion --- variability --- device simulation --- nanodevice --- screening --- Coulomb interaction --- III-V --- TASE --- MOSFETs --- Integration --- nanowire field-effect transistors --- silicon nanomaterials --- charge transport --- one-dimensional multi-subband scattering models --- Kubo–Greenwood formalism --- schrödinger-poisson solvers --- DC and AC characteristic fluctuations --- gate-all-around --- nanowire --- work function fluctuation --- aspect ratio of channel cross-section --- timing fluctuation --- noise margin fluctuation --- power fluctuation --- CMOS circuit --- statistical device simulation --- variability effects --- Monte Carlo --- Schrödinger based quantum corrections --- quantum modeling --- nonequilibrium Green’s function --- nanowire transistor --- electron–phonon interaction --- phonon–phonon interaction --- self-consistent Born approximation --- lowest order approximation --- Padé approximants --- Richardson extrapolation --- ZnO --- field effect transistor --- conduction mechanism --- metal gate --- material properties --- fabrication --- modelling --- nanojunction --- constriction --- quantum electron transport --- quantum confinement --- dimensionality reduction --- stochastic Schrödinger equations --- geometric correlations --- silicon nanowires --- nano-transistors --- quantum transport --- hot electrons --- self-cooling --- nano-cooling --- thermoelectricity --- heat equation --- non-equilibrium Green functions --- power dissipation


Book
Nanowire Field-Effect Transistor (FET)
Authors: --- ---
Year: 2021 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

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Abstract

In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

Keywords

random dopant --- drift-diffusion --- variability --- device simulation --- nanodevice --- screening --- Coulomb interaction --- III-V --- TASE --- MOSFETs --- Integration --- nanowire field-effect transistors --- silicon nanomaterials --- charge transport --- one-dimensional multi-subband scattering models --- Kubo–Greenwood formalism --- schrödinger-poisson solvers --- DC and AC characteristic fluctuations --- gate-all-around --- nanowire --- work function fluctuation --- aspect ratio of channel cross-section --- timing fluctuation --- noise margin fluctuation --- power fluctuation --- CMOS circuit --- statistical device simulation --- variability effects --- Monte Carlo --- Schrödinger based quantum corrections --- quantum modeling --- nonequilibrium Green’s function --- nanowire transistor --- electron–phonon interaction --- phonon–phonon interaction --- self-consistent Born approximation --- lowest order approximation --- Padé approximants --- Richardson extrapolation --- ZnO --- field effect transistor --- conduction mechanism --- metal gate --- material properties --- fabrication --- modelling --- nanojunction --- constriction --- quantum electron transport --- quantum confinement --- dimensionality reduction --- stochastic Schrödinger equations --- geometric correlations --- silicon nanowires --- nano-transistors --- quantum transport --- hot electrons --- self-cooling --- nano-cooling --- thermoelectricity --- heat equation --- non-equilibrium Green functions --- power dissipation

Telling the evolutionary time : molecular clocks and the fossil record
Authors: ---
ISBN: 0415275245 6610054002 9786610054008 1134477309 128005400X 020364252X 0429212364 Year: 2003 Publisher: Boca Raton, FL : CRC Press [Chemical Rubber Company],


Book
Nanowire Field-Effect Transistor (FET)
Authors: --- ---
Year: 2021 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

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Abstract

In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

Keywords

History of engineering & technology --- random dopant --- drift-diffusion --- variability --- device simulation --- nanodevice --- screening --- Coulomb interaction --- III-V --- TASE --- MOSFETs --- Integration --- nanowire field-effect transistors --- silicon nanomaterials --- charge transport --- one-dimensional multi-subband scattering models --- Kubo–Greenwood formalism --- schrödinger-poisson solvers --- DC and AC characteristic fluctuations --- gate-all-around --- nanowire --- work function fluctuation --- aspect ratio of channel cross-section --- timing fluctuation --- noise margin fluctuation --- power fluctuation --- CMOS circuit --- statistical device simulation --- variability effects --- Monte Carlo --- Schrödinger based quantum corrections --- quantum modeling --- nonequilibrium Green’s function --- nanowire transistor --- electron–phonon interaction --- phonon–phonon interaction --- self-consistent Born approximation --- lowest order approximation --- Padé approximants --- Richardson extrapolation --- ZnO --- field effect transistor --- conduction mechanism --- metal gate --- material properties --- fabrication --- modelling --- nanojunction --- constriction --- quantum electron transport --- quantum confinement --- dimensionality reduction --- stochastic Schrödinger equations --- geometric correlations --- silicon nanowires --- nano-transistors --- quantum transport --- hot electrons --- self-cooling --- nano-cooling --- thermoelectricity --- heat equation --- non-equilibrium Green functions --- power dissipation --- random dopant --- drift-diffusion --- variability --- device simulation --- nanodevice --- screening --- Coulomb interaction --- III-V --- TASE --- MOSFETs --- Integration --- nanowire field-effect transistors --- silicon nanomaterials --- charge transport --- one-dimensional multi-subband scattering models --- Kubo–Greenwood formalism --- schrödinger-poisson solvers --- DC and AC characteristic fluctuations --- gate-all-around --- nanowire --- work function fluctuation --- aspect ratio of channel cross-section --- timing fluctuation --- noise margin fluctuation --- power fluctuation --- CMOS circuit --- statistical device simulation --- variability effects --- Monte Carlo --- Schrödinger based quantum corrections --- quantum modeling --- nonequilibrium Green’s function --- nanowire transistor --- electron–phonon interaction --- phonon–phonon interaction --- self-consistent Born approximation --- lowest order approximation --- Padé approximants --- Richardson extrapolation --- ZnO --- field effect transistor --- conduction mechanism --- metal gate --- material properties --- fabrication --- modelling --- nanojunction --- constriction --- quantum electron transport --- quantum confinement --- dimensionality reduction --- stochastic Schrödinger equations --- geometric correlations --- silicon nanowires --- nano-transistors --- quantum transport --- hot electrons --- self-cooling --- nano-cooling --- thermoelectricity --- heat equation --- non-equilibrium Green functions --- power dissipation

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