Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Electronics --- oscillatoren --- filters --- FET (field-effect transistor) --- versterkers

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Electronics --- filters --- FET (field-effect transistor) --- elektronica --- thyristoren --- transistoren --- halfgeleiders --- versterkers

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

FET (field-effect transistor) --- Electronics --- transistoren --- Vermogenselektronica --- MOSFET --- MOSPOWER --- applications --- Metal oxide semiconductor field-effect transistors --- Power transistors --- Field-effect transistors --- Metal oxide semiconductors --- Junction transistors --- Power electronics --- Power semiconductors --- Transistors --- Handbooks, manuals, etc

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Dit boek biedt een degelijk inzicht in de (fysische) meettheorie en meettechniek. De kennis stelt de (toekomstige) technicus in staat om op een verantwoorde wijze meetapparatuur te kunnen aanschaffen en gebruiken. Uit de meettheorie worden in dit boek die onderwerpen behandeld die noodzakelijk zijn voor een goede presentatie, analyse en interpretatie van meetresultaten. Van de meetapparatuur wordt het globale werkingsprincipe behandeld en worden de belangrijkste functies beschreven. De nadruk ligt daarbij op de fysische omzettingsprincipes en op de hoofdfuncties van de gebruikte elektronica. Er wordt uitgebreid aandacht besteed aan koppeling van meetsystemen aan de computer. De onderwerpen worden zoveel mogelijk behandeld aan de hand van (vereenvoudigde) praktijkvoorbeelden. Bij de introductie van de wiskundige en fysische achtergronden is ernaar gestreefd aan te sluiten op het gemiddelde kennisniveau van studenten in het HTO en niet verder uit te weiden dan strikt noodzakelijk is. In een aparte uitgave zijn de uitwerkingen van alle opdrachten opgenomen.

Measuring methods in physics --- Machine elements --- filters --- LED (light emitting diode) --- modulatie --- meettoestellen --- FET (field-effect transistor) --- meettechniek --- procestechnologie --- storingen --- 681.5.01 --- meettechnieken --- grondslagen en theorie van besturingstechniek

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

MOSFET --- n/a --- total ionizing dose (TID) --- low power consumption --- process simulation --- two-dimensional material --- negative-capacitance --- power consumption --- technology computer aided design (TCAD) --- thin-film transistors (TFTs) --- band-to-band tunneling (BTBT) --- nanowires --- inversion channel --- metal oxide semiconductor field effect transistor (MOSFET) --- spike-timing-dependent plasticity (STDP) --- field effect transistor --- segregation --- systematic variations --- Sentaurus TCAD --- indium selenide --- nanosheets --- technology computer-aided design (TCAD) --- high-? dielectric --- subthreshold bias range --- statistical variations --- fin field effect transistor (FinFET) --- compact models --- non-equilibrium Green’s function --- etching simulation --- highly miniaturized transistor structure --- compact model --- silicon nanowire --- surface potential --- Silicon-Germanium source/drain (SiGe S/D) --- nanowire --- plasma-aided molecular beam epitaxy (MBE) --- phonon scattering --- mobility --- silicon-on-insulator --- drain engineered --- device simulation --- variability --- semi-floating gate --- synaptic transistor --- neuromorphic system --- theoretical model --- CMOS --- ferroelectrics --- tunnel field-effect transistor (TFET) --- SiGe --- metal gate granularity --- buried channel --- ON-state --- bulk NMOS devices --- ambipolar --- piezoelectrics --- tunnel field effect transistor (TFET) --- FinFETs --- polarization --- field-effect transistor --- line edge roughness --- random discrete dopants --- radiation hardened by design (RHBD) --- low energy --- flux calculation --- doping incorporation --- low voltage --- topography simulation --- MOS devices --- low-frequency noise --- high-k --- layout --- level set --- process variations --- subthreshold --- metal gate stack --- electrostatic discharge (ESD) --- non-equilibrium Green's function