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Book
Optical dispersion relations for "diamondlike" carbon films
Authors: --- ---
Year: 1989 Publisher: Cleveland, Ohio : NASA, Lewis Research Center,

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Book
Physics of narrow gap semiconductors : proceedings of the III international conference, Warszawa, September 12-15, 1977
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ISBN: 0444998012 Year: 1978 Publisher: Amsterdam : Panstwowe Wydawnictwo Naukowe (PWN) = Polish scientific publishers,

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The gap symmetry and fluctuations in high-Tc superconductors
Authors: --- --- ---
ISBN: 0306459345 1280206527 9786610206520 0306470810 Year: 1998 Volume: 371 Publisher: New York, NY : Springer US : Imprint: Springer,

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Since the discovery in 1986 of high temperature superconductors by J. G. Bednorz and K. A. Müller, a considerable progress has been made and several important scientific problems have emerged. Within this NATO Advanced Study Institute our intention was to focus mainly on the controversial topic of the symmetry of the superconducting gap and given the very short coherence length, the role of fluctuations. The Institute on ‘The Gap Symmetry and Fluctuations in High- Superconductors’ took place in the “Institut d’Etudes Scientifiques de Cargèse” in Corsica, France, between 1 - 13 September 1997. The 110 participantsfrom 18 countries (yet 30 nationalities) including 23 full time lecturers, have spent two memorable weeks in this charming Mediterranean resort. All lecturers were asked to prepare pedagogical papers to clearly present the central physical idea behind specific model or experiment. The better understanding of physics of high temperature superconductivity is certainly needed to guide the development of applications of these materials in high and weak current devices.


Book
Superconducting and Graphene-based Devices
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Year: 2022 Publisher: Basel MDPI - Multidisciplinary Digital Publishing Institute

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This Special Issue reprint aims to collect new or improved ideas to exploit superconducting materials, as well as graphene, towards achieving innovative devices, either at a small scale, as well as at a large scale. Several potential applications of graphene are enhanced by the possibility to modify its surface to introduce a non-zero bandgap, to tune adhesion and/or hydrophobicity/hydrophilicity, etc. These surface properties are crucial to the realization of graphene-based devices. Papers demonstrating graphene and/or superconducting devices, device processing, characterization, and applications, are particularly welcomed. Topics in this Special Issue include, but are not limited to: Graphene devices Graphene based heterostructures Superconducting interfaces Superconducting devices Electronic, optical, photonic and magnetic properties Surface and interfacial characterization techniques Device integration and fabrication

Keywords

Technology: general issues --- GFET --- RF --- access region --- superconducting devices --- photodetectors --- nanostructured materials --- nanostructured and microstructured superconductors --- high temperature superconductors --- bolometers --- quantum electronics --- noise spectroscopy --- granular aluminum oxide --- superconducting nanowires --- current-resistance effects --- iron-based superconductors --- nanowires --- single-photon detectors --- superconductivity --- transport properties --- energy gap --- superconducting order parameter --- proximity effect --- nano-junction --- Andreev reflection --- chemical --- vapor deposition --- graphene oxide --- transition-metal dichalcogenides --- WS2 --- perfect graphene (p-Gr) --- defective graphene (d-Gr) --- Gr/Si slab --- diffusion barrier --- CI-NEB calculation --- GFET --- RF --- access region --- superconducting devices --- photodetectors --- nanostructured materials --- nanostructured and microstructured superconductors --- high temperature superconductors --- bolometers --- quantum electronics --- noise spectroscopy --- granular aluminum oxide --- superconducting nanowires --- current-resistance effects --- iron-based superconductors --- nanowires --- single-photon detectors --- superconductivity --- transport properties --- energy gap --- superconducting order parameter --- proximity effect --- nano-junction --- Andreev reflection --- chemical --- vapor deposition --- graphene oxide --- transition-metal dichalcogenides --- WS2 --- perfect graphene (p-Gr) --- defective graphene (d-Gr) --- Gr/Si slab --- diffusion barrier --- CI-NEB calculation


Book
Narrow gap semiconductors 2007 : proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK
Authors: --- ---
ISBN: 1281920347 9786611920340 1402084250 1402084242 Year: 2008 Publisher: Dordrecht ; Bristol : Springer Verlag in association with Canopus,

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Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.

Physics and properties of narrow gap semiconductors
Authors: ---
ISBN: 1281133590 9786611133597 0387748016 0387747435 1441925686 Year: 2008 Publisher: New York ; London : Springer,

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Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently, these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. For example, narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. In this book, the authors offer clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. Physics and Properties of Narrow Gap Semiconductors helps readers to understand semiconductor physics and related areas of materials science and how they relate to advanced opto-electronic devices.


Book
Device physics of narrow gap semiconductors
Authors: ---
ISBN: 1441910395 1441910417 9786612833236 1441910409 1282833235 1461424801 Year: 2010 Publisher: New York ; London : Springer,

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Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.


Book
Superconducting and Graphene-based Devices
Author:
Year: 2022 Publisher: Basel MDPI - Multidisciplinary Digital Publishing Institute

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Abstract

This Special Issue reprint aims to collect new or improved ideas to exploit superconducting materials, as well as graphene, towards achieving innovative devices, either at a small scale, as well as at a large scale. Several potential applications of graphene are enhanced by the possibility to modify its surface to introduce a non-zero bandgap, to tune adhesion and/or hydrophobicity/hydrophilicity, etc. These surface properties are crucial to the realization of graphene-based devices. Papers demonstrating graphene and/or superconducting devices, device processing, characterization, and applications, are particularly welcomed. Topics in this Special Issue include, but are not limited to: Graphene devices Graphene based heterostructures Superconducting interfaces Superconducting devices Electronic, optical, photonic and magnetic properties Surface and interfacial characterization techniques Device integration and fabrication

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