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Chemical potentials. --- Conductivities. --- Diffusion coefficients. --- Electrolyte solutions. --- Ion mobility. --- Ionizing solvents. --- Transport numbers.

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Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.

Technology: general issues --- GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity --- GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity

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Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective – Area Metalorganic Vapour – Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.

Technology: general issues --- GaN HEMT --- self-heating effect --- microwave power amplifier --- thermal impedance --- thermal time constant --- thermal equivalent circuit --- GaN --- crystal growth --- ammonothermal method --- HVPE --- ion implantation --- gallium nitride --- thermodynamics --- ultra-high-pressure annealing --- diffusion --- diffusion coefficients --- molecular beam epitaxy --- nitrides --- laser diode --- tunnel junction --- LTE --- AlN --- AlGaN/GaN --- interface state density --- conductance-frequency --- MISHEMT --- gallium nitride nanowires --- polarity --- Kelvin probe force microscopy --- selective area growth --- selective epitaxy --- AlGaN/GaN heterostructures --- edge effects --- effective diffusion length --- MOVPE --- nanowires --- AlGaN --- LEDs --- growth polarity --- n/a

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Globally, fire regimes are being altered by changing climatic conditions and land use changes. This has the potential to drive species extinctions and cause ecosystem state changes, with a range of consequences for ecosystem services. Accurate prediction of the risk of forest fires over short timescales (weeks or months) is required for land managers to target suppression resources in order to protect people, property, and infrastructure, as well as fire-sensitive ecosystems. Over longer timescales, prediction of changes in forest fire regimes is required to model the effect of wildfires on the terrestrial carbon cycle and subsequent feedbacks into the climate system.This was the motivation to publish this book, which is focused on quantifying and modelling the risk factors of forest fires. More specifically, the chapters in this book address four topics: (i) the use of fire danger metrics and other approaches to understand variation in wildfire activity; (ii) understanding changes in the flammability of live fuel; (iii) modeling dead fuel moisture content; and (iv) estimations of emission factors.The book will be of broad relevance to scientists and managers working with fire in different forest ecosystems globally.

fire danger rating --- fire management --- fire regime --- fire size --- fire weather --- Portugal --- critical LFMC threshold --- forest/grassland fire --- radiative transfer model --- remote sensing --- southwest China --- acid rain --- aerosol --- biomass burning --- forest fire --- PM2.5 --- direct estimation --- meteorological factor regression --- moisture content --- time lag --- forest fire driving factors --- forest fire occurrence --- random forest --- forest fire management --- China --- Cupressus sempervirens --- fire risk --- fuels --- fuel moisture content --- mass loss calorimeter --- Seiridium cardinale --- vulnerability to wildfires --- disease --- alien pathogen --- allochthonous species --- introduced fungus --- drying tests --- humidity diffusion coefficients --- wildfire --- prescribed burning --- modeling --- drought --- flammability --- fuel moisture --- leaf water potential --- plant traits --- climate change --- MNI --- fire season --- fire behavior --- crown fire --- fire modeling --- senescence --- foliar moisture content --- canopy bulk density --- fire danger --- fire weather patterns --- RCP --- FWI system --- SSR --- occurrence of forest fire --- machine learning --- variable importance --- prediction accuracy --- epicormic resprouter --- eucalyptus --- fire severity --- flammability feedbacks --- temperate forest --- n/a

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The book reprints a set of important scientific papers applying physics and mathematics to address the problem of selective ionic conduction in narrow water-filled channels and pores. It is a long-standing problem, and an extremely important one. Life in all its forms depends on ion channels and, furthermore, the technological applications of artificial ion channels are already widespread and growing rapidly. They include desalination, DNA sequencing, energy harvesting, molecular sensors, fuel cells, batteries, personalised medicine, and drug design. Further applications are to be anticipated.The book will be helpful to researchers and technologists already working in the area, or planning to enter it. It gives detailed descriptions of a diversity of modern approaches, and shows how they can be particularly effective and mutually reinforcing when used together. It not only provides a snapshot of current cutting-edge scientific activity in the area, but also offers indications of how the subject is likely to evolve in the future.

Research & information: general --- Technology: general issues --- reversal potential --- effects of diffusion coefficients --- permanent charge --- bioelectricity --- electrochemistry --- thermodynamics --- electrokinetics --- molecular mean-field theory --- Boltzmann and Fermi distributions --- Poisson-Boltzmann --- Poisson-Fermi --- Poisson-Bikerman --- Nernst-Planck --- steric and correlation effects --- ion channels --- ion activity --- double-layer capacitance --- nanofluidics --- steric effect --- Poisson-Boltzmann model --- Bikerman model --- entropy --- specific ion size --- electric double layer --- orientational ordering of water dipoles --- Helmholtz free energy --- modified Langevin Poisson-Boltzmann model --- nanopores --- reduced models --- Monte Carlo --- classical density functional theory --- Poisson-Nernst-Planck --- ion transport --- nanopore --- graphene --- crown ether --- ion channel --- selectivity --- permeability --- patch-clamp --- computer simulations --- ionic Coulomb blockade --- 2D materials --- nanotubes --- angstrom slits --- protein dynamics --- molecular dynamics --- non-Hermitian Hamiltonians --- algebraic topology --- semiclassical methods --- statistical mechanics --- polarization --- maxwell equations --- gating current --- dielectric constant --- statistical theory --- linear response --- ionic transport --- NaChBac --- computational electrophysiology --- electrodiffusion model --- stochastic simulations --- current-voltage dependence --- committor probabilities --- reversal potential --- effects of diffusion coefficients --- permanent charge --- bioelectricity --- electrochemistry --- thermodynamics --- electrokinetics --- molecular mean-field theory --- Boltzmann and Fermi distributions --- Poisson-Boltzmann --- Poisson-Fermi --- Poisson-Bikerman --- Nernst-Planck --- steric and correlation effects --- ion channels --- ion activity --- double-layer capacitance --- nanofluidics --- steric effect --- Poisson-Boltzmann model --- Bikerman model --- entropy --- specific ion size --- electric double layer --- orientational ordering of water dipoles --- Helmholtz free energy --- modified Langevin Poisson-Boltzmann model --- nanopores --- reduced models --- Monte Carlo --- classical density functional theory --- Poisson-Nernst-Planck --- ion transport --- nanopore --- graphene --- crown ether --- ion channel --- selectivity --- permeability --- patch-clamp --- computer simulations --- ionic Coulomb blockade --- 2D materials --- nanotubes --- angstrom slits --- protein dynamics --- molecular dynamics --- non-Hermitian Hamiltonians --- algebraic topology --- semiclassical methods --- statistical mechanics --- polarization --- maxwell equations --- gating current --- dielectric constant --- statistical theory --- linear response --- ionic transport --- NaChBac --- computational electrophysiology --- electrodiffusion model --- stochastic simulations --- current-voltage dependence --- committor probabilities