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Significant progress has been made in nanophotonics and the use of nanostructured materials for optoelectronic devices, including light-emitting diodes (LEDs) and laser diodes, which have recently attracted considerable attention due to their unique geometry. Nanostructures in small dimensions, comprising nanowires, nanotubes, and nanoparticles, etc,. can be perfectly integrated into a variety of technological platforms, offering novel physical and chemical properties for high-performance, light-emitting devices. This Special Issue aims to present the most recent advances in the field of nanophotonics, which focuses on LEDs and laser diodes. We invite contributions of original research articles, as well as review articles that are aligned to the following topics that include, but are not limited to, thetheoretical calculation, synthesis, characterization, and application of such novel nanostructures for light-emitting devices. The application of nanostructured light-emitters in general lighting, imaging, and displays is also highly encouraged.

History of engineering & technology --- Liquid phase deposition method --- InGaN/GaN light-emitting diode --- silver nanoparticle --- zinc oxide --- localized surface plasmon --- β-Ga2O3 --- III-Nitrides --- monoclinic --- hexagonal arrangement --- high-power --- current distribution --- vertical structure LED --- blue organic light emitting diodes --- transport materials --- host-dopant --- nanoparticles --- luminescence --- non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals --- photoluminescence properties --- tunable fluorescence emission --- one-pot approach --- perovskite light-emitting diodes --- three-step spin coating --- hole transport layer --- PEDOT:PSS/MoO3-ammonia composite --- μLED displays --- μLEDs --- GaN nanowires --- core-shell structure --- ultraviolet (UV) emitter --- surface plasmon --- Pt nanoparticles --- hole-pattern --- photon emission efficiency --- distributed Bragg reflectors --- gratings --- GaN-based lasers --- linewidth --- epsilon-near-zero --- wideband absorber --- plasmon mode --- Brewster mode --- visible light communication --- photonic crystals --- flip-chip LED --- Purcell effect --- light extraction efficiency --- nanostructured materials --- surface/interface properties --- nanostructured light-emitting devices --- physical mechanism --- surface/interface modification --- surface/interface control --- micro-scale light emitting diode --- sapphire substrate --- encapsulation --- compound semiconductor --- nanostructure --- ultraviolet --- light-emitting diode (LED) --- molecular beam epitaxy --- GaN --- AlN --- photonic nanojet --- photonic nanojet array --- self-assembly --- template-assisted self-assembly --- patterning efficiency --- III-nitride thin film --- nanostructures --- ultraviolet emitters --- surface passivation --- luminescence intensity --- Liquid phase deposition method --- InGaN/GaN light-emitting diode --- silver nanoparticle --- zinc oxide --- localized surface plasmon --- β-Ga2O3 --- III-Nitrides --- monoclinic --- hexagonal arrangement --- high-power --- current distribution --- vertical structure LED --- blue organic light emitting diodes --- transport materials --- host-dopant --- nanoparticles --- luminescence --- non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals --- photoluminescence properties --- tunable fluorescence emission --- one-pot approach --- perovskite light-emitting diodes --- three-step spin coating --- hole transport layer --- PEDOT:PSS/MoO3-ammonia composite --- μLED displays --- μLEDs --- GaN nanowires --- core-shell structure --- ultraviolet (UV) emitter --- surface plasmon --- Pt nanoparticles --- hole-pattern --- photon emission efficiency --- distributed Bragg reflectors --- gratings --- GaN-based lasers --- linewidth --- epsilon-near-zero --- wideband absorber --- plasmon mode --- Brewster mode --- visible light communication --- photonic crystals --- flip-chip LED --- Purcell effect --- light extraction efficiency --- nanostructured materials --- surface/interface properties --- nanostructured light-emitting devices --- physical mechanism --- surface/interface modification --- surface/interface control --- micro-scale light emitting diode --- sapphire substrate --- encapsulation --- compound semiconductor --- nanostructure --- ultraviolet --- light-emitting diode (LED) --- molecular beam epitaxy --- GaN --- AlN --- photonic nanojet --- photonic nanojet array --- self-assembly --- template-assisted self-assembly --- patterning efficiency --- III-nitride thin film --- nanostructures --- ultraviolet emitters --- surface passivation --- luminescence intensity

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Significant progress has been made in nanophotonics and the use of nanostructured materials for optoelectronic devices, including light-emitting diodes (LEDs) and laser diodes, which have recently attracted considerable attention due to their unique geometry. Nanostructures in small dimensions, comprising nanowires, nanotubes, and nanoparticles, etc,. can be perfectly integrated into a variety of technological platforms, offering novel physical and chemical properties for high-performance, light-emitting devices. This Special Issue aims to present the most recent advances in the field of nanophotonics, which focuses on LEDs and laser diodes. We invite contributions of original research articles, as well as review articles that are aligned to the following topics that include, but are not limited to, thetheoretical calculation, synthesis, characterization, and application of such novel nanostructures for light-emitting devices. The application of nanostructured light-emitters in general lighting, imaging, and displays is also highly encouraged.

Liquid phase deposition method --- InGaN/GaN light-emitting diode --- silver nanoparticle --- zinc oxide --- localized surface plasmon --- β-Ga2O3 --- III-Nitrides --- monoclinic --- hexagonal arrangement --- high-power --- current distribution --- vertical structure LED --- blue organic light emitting diodes --- transport materials --- host-dopant --- nanoparticles --- luminescence --- non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals --- photoluminescence properties --- tunable fluorescence emission --- one-pot approach --- perovskite light-emitting diodes --- three-step spin coating --- hole transport layer --- PEDOT:PSS/MoO3-ammonia composite --- μLED displays --- μLEDs --- GaN nanowires --- core-shell structure --- ultraviolet (UV) emitter --- surface plasmon --- Pt nanoparticles --- hole-pattern --- photon emission efficiency --- distributed Bragg reflectors --- gratings --- GaN-based lasers --- linewidth --- epsilon-near-zero --- wideband absorber --- plasmon mode --- Brewster mode --- visible light communication --- photonic crystals --- flip-chip LED --- Purcell effect --- light extraction efficiency --- nanostructured materials --- surface/interface properties --- nanostructured light-emitting devices --- physical mechanism --- surface/interface modification --- surface/interface control --- micro-scale light emitting diode --- sapphire substrate --- encapsulation --- compound semiconductor --- nanostructure --- ultraviolet --- light-emitting diode (LED) --- molecular beam epitaxy --- GaN --- AlN --- photonic nanojet --- photonic nanojet array --- self-assembly --- template-assisted self-assembly --- patterning efficiency --- III-nitride thin film --- nanostructures --- ultraviolet emitters --- surface passivation --- luminescence intensity --- n/a