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This study has developed a complete procedure for the measurement of oxygen isotopes in arsenic oxyanions in natural waters by using different adsorbents. The experimental results of kinetic exchange of oxygen between AsO43- and water show that the entire exchange procedure happens in a very short time at different pH conditions and temperatures.

Sauerstoff-Isotopenkomposition --- Arsenitspezies --- arsenate species --- kinetic exchange --- quantitative separation --- oxygen isotope composition --- Arsenatspezies --- Kinetischer Austausch --- arsenite species --- Quantitative Trennung

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This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.

Technology: general issues --- silicon --- yolk−shell structure --- anode --- lithium-ion batteries --- in-plane nanowire --- site-controlled --- epitaxial growth --- germanium --- nanowire-based quantum devices --- HfO2/Si0.7Ge0.3 gate stack --- ozone oxidation --- Si-cap --- interface state density --- passivation --- GOI --- photodetectors --- dark current --- responsivity --- prussian blue nanoparticles --- organotrialkoxysilane --- silica beads --- arsenite --- arsenate --- water decontamination --- vertical gate-all-around (vGAA) --- digital etch --- quasi-atomic-layer etching (q-ALE) --- selective wet etching --- HNO3 concentration --- doping effect --- vertical Gate-all-around (vGAA) --- p+-Ge0.8Si0.2/Ge stack --- dual-selective wet etching --- atomic layer etching (ALE) --- stacked SiGe/Si --- epitaxial grown --- Fin etching --- FinFET --- short-term potentiation (STP) --- long-term potentiation (LTP) --- charge-trap synaptic transistor --- band-to-band tunneling --- pattern recognition --- neural network --- neuromorphic system --- Si-MOS --- quantum dot --- spin qubits --- quantum computing --- GeSn --- CVD --- lasers --- detectors --- transistors --- III-V on Si --- heteroepitaxy --- threading dislocation densities (TDDs) --- anti-phase boundaries (APBs) --- selective epitaxial growth (SEG) --- n/a

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• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.

Technology: general issues --- silicon --- yolk−shell structure --- anode --- lithium-ion batteries --- in-plane nanowire --- site-controlled --- epitaxial growth --- germanium --- nanowire-based quantum devices --- HfO2/Si0.7Ge0.3 gate stack --- ozone oxidation --- Si-cap --- interface state density --- passivation --- GOI --- photodetectors --- dark current --- responsivity --- prussian blue nanoparticles --- organotrialkoxysilane --- silica beads --- arsenite --- arsenate --- water decontamination --- vertical gate-all-around (vGAA) --- digital etch --- quasi-atomic-layer etching (q-ALE) --- selective wet etching --- HNO3 concentration --- doping effect --- vertical Gate-all-around (vGAA) --- p+-Ge0.8Si0.2/Ge stack --- dual-selective wet etching --- atomic layer etching (ALE) --- stacked SiGe/Si --- epitaxial grown --- Fin etching --- FinFET --- short-term potentiation (STP) --- long-term potentiation (LTP) --- charge-trap synaptic transistor --- band-to-band tunneling --- pattern recognition --- neural network --- neuromorphic system --- Si-MOS --- quantum dot --- spin qubits --- quantum computing --- GeSn --- CVD --- lasers --- detectors --- transistors --- III-V on Si --- heteroepitaxy --- threading dislocation densities (TDDs) --- anti-phase boundaries (APBs) --- selective epitaxial growth (SEG) --- silicon --- yolk−shell structure --- anode --- lithium-ion batteries --- in-plane nanowire --- site-controlled --- epitaxial growth --- germanium --- nanowire-based quantum devices --- HfO2/Si0.7Ge0.3 gate stack --- ozone oxidation --- Si-cap --- interface state density --- passivation --- GOI --- photodetectors --- dark current --- responsivity --- prussian blue nanoparticles --- organotrialkoxysilane --- silica beads --- arsenite --- arsenate --- water decontamination --- vertical gate-all-around (vGAA) --- digital etch --- quasi-atomic-layer etching (q-ALE) --- selective wet etching --- HNO3 concentration --- doping effect --- vertical Gate-all-around (vGAA) --- p+-Ge0.8Si0.2/Ge stack --- dual-selective wet etching --- atomic layer etching (ALE) --- stacked SiGe/Si --- epitaxial grown --- Fin etching --- FinFET --- short-term potentiation (STP) --- long-term potentiation (LTP) --- charge-trap synaptic transistor --- band-to-band tunneling --- pattern recognition --- neural network --- neuromorphic system --- Si-MOS --- quantum dot --- spin qubits --- quantum computing --- GeSn --- CVD --- lasers --- detectors --- transistors --- III-V on Si --- heteroepitaxy --- threading dislocation densities (TDDs) --- anti-phase boundaries (APBs) --- selective epitaxial growth (SEG)