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In this work, silicon nitride/silicon carbide composites are manufactured and characterized for tribologically highly stressed applications. The characterization of the composite materials shows the influence of the silicon carbide content on the resulting microstructure and the mechanical properties. The friction properties of the composite materials were characterized in tribological experiments. The composites show very good friction and wear behavior.
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In this work, silicon nitride/silicon carbide composites are manufactured and characterized for tribologically highly stressed applications. The characterization of the composite materials shows the influence of the silicon carbide content on the resulting microstructure and the mechanical properties. The friction properties of the composite materials were characterized in tribological experiments. The composites show very good friction and wear behavior.
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In this work, silicon nitride/silicon carbide composites are manufactured and characterized for tribologically highly stressed applications. The characterization of the composite materials shows the influence of the silicon carbide content on the resulting microstructure and the mechanical properties. The friction properties of the composite materials were characterized in tribological experiments. The composites show very good friction and wear behavior.
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The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm 2 , 15 kV class bipolar devices have been demonstrated, including PN Diodes, IG
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Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021).
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