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Book
2009 17th International Conference on Advanced Thermal Processing of Semiconductors
Authors: ---
ISBN: 1424438144 1424438152 1424438160 Year: 2009 Publisher: [Place of publication not identified] I E E E

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2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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ISBN: 1665422017 1665422025 Year: 2022 Publisher: Piscataway, New Jersey : IEEE,

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Impurity doping processes in silicon
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ISBN: 0444860959 Year: 1981 Publisher: Amsterdam North-Holland

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Doping in III-V semiconductors
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ISBN: 0521419190 Year: 1993 Publisher: Cambridge : Cambridge university press,

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Book
A survey of semiconductor radiation techniques
Authors: --- --- ---
Year: 1983 Publisher: Moscow : Mir,

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Book
Ion implantation : equipment & techniques : proceedings of the Fifth International Conference on Ion Implantation Equipment & Techniques, Smugglers' Notch, Jeffersonville VT, USA, July 23-27, 1984

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Book
Doping in III-V semiconductors
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ISBN: 051159982X Year: 1993 Publisher: Cambridge : Cambridge University Press,

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This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.


Book
IEEE Standard for Exposed Semiconducting Shields on Premolded High Voltage Cable Joints and Separable Insulated Connectors
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ISBN: 073814388X Year: 1977 Publisher: New York : Institute of Electrical and Electronics Engineers (IEEE),

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Cable accessories, specifically separable insulated connectors and cable joints, used with extruded dielectric cable rated above 5 kV, are required to have an outer semiconducting shield covering their insulation surfaces. The shield is intended to protect the insulation, to provide voltage stress relief, to maintain the accessory surface at or near ground potential under normal operating conditions, and to initiate fault current arcing if accessory insulation should fail. This standard sets forth tests and requirements to demonstrate that the shield will perform these duties. One of the requirements in this standard specifies a maximum shield resistance. This requirement is to assure that the accessory shield provides stress relief and that the shield surface is maintained at or near ground potential. Another requirement in this standard specifies a shield fault current initiation test. This test is designed to demonstrate the ability of the accessory shield to initiate fault current arcs to ground which will cause overcurrent protective devices to operate should the accessory insulation fail.

Impurities in semiconductors : solubility, migration, and interactions
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ISBN: 0415308313 9780415308311 Year: 2004 Publisher: Boca Raton: CRC,

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Book
IIT 2002 proceedings : ion implementation technology : 2002 14th International Conference on Ion Implantation Technology proceedings, Taos, New Mexico, USA, 22-27 September 2002
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Year: 2002 Publisher: [Place of publication not identified] IEEE

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