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Recombination in semiconductors
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ISBN: 0521361222 Year: 1991 Publisher: Cambridge Cambridge University Press

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Abstract

This book is devoted to the main aspects of the physics of recombination in semiconductors. It is the first book to deal exclusively and comprehensively with the subject, and as such is a self-contained volume, introducing the concepts and mechanisms of recombination from a fundamental point of view. Professor Landsberg is an internationally acknowledged expert in this field, and while not neglecting the occasional historical insights, he takes the reader to the frontiers of current research. Following initial chapters on semiconductor statistics and recombination statistics, the text moves on to examine the main recombination mechanisms: Auger effects, impact ionisation, radiative recombination, defect and multiphonon recombination. The final chapter deals with the topical subject of quantum wells and low-dimensional structures. Altogether the book covers a remarkably wide area of semiconductor physics. The book will be of importance to physicists, electronic engineers and applied mathematicians who are studying or researching the physics and applications of semiconductors. Some parts of the book will be accessible to final-year undergraduates.


Book
Quantitative Recombination and Transport Properties in Silicon from Dynamic Luminescence
Author:
ISBN: 3319061577 3319061569 1322135061 Year: 2014 Publisher: Cham : Springer International Publishing : Imprint: Springer,

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Abstract

Harmonically modulated luminescence combines the advantages of highly sensitive luminescence metrology with an immediate dynamic access to carrier lifetime in semiconductors at a minimum of required a priori information. The present work covers theoretical, conceptual, and experimental advances of the harmonically modulated luminescence technique. Theoretical constraints of dynamic carrier lifetime techniques are rigorously elaborated, including the proof of their differential nature and their characteristics at nonuniform spatial distributions of recombination rate. The pathway toward a unified, reliable, and versatile harmonically modulated carrier lifetime metrology is delineated - covering the entire solar cell production chain from bare ingots to finished solar cells. Accurate access to miscellaneous relevant recombination and transport properties via harmonically modulated luminescence is demonstrated and experimentally validated, embracing injection-dependent carrier lifetimes at extremely low injection conditions, a spatially resolved carrier lifetime calibration of luminescence images, and accurate approaches to both net dopant concentration and minority carrier mobility.

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