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This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.

Materials science. --- Computers. --- Semiconductors. --- Electronic circuits. --- Optical materials. --- Electronic materials. --- Materials Science. --- Optical and Electronic Materials. --- Circuits and Systems. --- Computation by Abstract Devices. --- Electronic Circuits and Devices. --- Physics. --- Phase change memory. --- C-RAM (Chalcogenide RAM) --- Chalcogenide RAM --- Chalcogenide random access memory --- Memory, Ovonic unified --- Memory, Phase change --- Ovonic unified memory --- PCM memory --- PCME (Phase change memory) --- PCRAM (Phase change RAM) --- Phase change RAM --- Phase change random access memory --- PRAM (Phase change RAM) --- Unified memory, Ovonic --- Random access memory --- Semiconductor storage devices --- Natural philosophy --- Philosophy, Natural --- Physical sciences --- Dynamics --- Systems engineering. --- Computer science. --- Informatics --- Science --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Optics --- Materials --- Design and construction --- Automatic computers --- Automatic data processors --- Computer hardware --- Computing machines (Computers) --- Electronic brains --- Electronic calculating-machines --- Electronic computers --- Hardware, Computer --- Computer systems --- Cybernetics --- Machine theory --- Calculators --- Cyberspace --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Electronics --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Solid state electronics --- Electronic materials

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This book on pressure-induced phase transitions in AB2X4 chalcogenide compounds deals with one important AmBnXp material. The interest in these materials is caused by their properties. The results are discussed for three main groups of structural families: cubic-spinel structures, defective tetragonal structures, and other structures like layered and wurtzite-type modifications. A systematic analysis of the behavior of cubic (spinel), tetragonal (defect chalcopyrites and stannites) and other crystal modifications of AB2X4 compounds under hydrostatic pressure is performed. The behavior of AIIAl2S4, AIIGa2S4, AIIAl2Se4 and AIIGa2Se4 compounds with defective tetragonal structures, compounds with layered and wurtzite structures under hydrostatic pressure and the pressure dependence of the band gap, lattice parameters, interatomic distances, vibrational modes and pressure-induced phase transitions is discussed. Many of these compounds,  except oxide spinels, undergo a pressure-induced phase transition towards the rocksalt-type structure. The phase transition is preceded by disorder in the cation sublattice. The dependence of the transition pressure to the rocksalt-type structure as a function of the compound ionicity and the size criterion is analyzed.  At high pressures, all ordered-vacancy compounds are found to exhibit a band anticrossing between several conduction bands that leads to a strong decrease of its pressure coefficient and consequently to a strong non-linear pressure dependence of the direct bandgap energy. Theoretical studies of phase transitions in several ordered-vacancy compounds reveal that the existence of ordered vacancies alter the cation-anion bond distances and their compressibilities. The book is written for students, Ph D. students and specialists in materials science, phase transitions and new materials.

Chalcogenides. --- Extended X-ray absorption fine structure. --- Molecular dynamics. --- Phase change memory. --- Chalcogenides --- Physics. --- Electric properties. --- Natural philosophy --- Philosophy, Natural --- Chalkogenides --- Optical materials. --- Microwaves. --- Optical and Electronic Materials. --- Semiconductors. --- Microwaves, RF and Optical Engineering. --- Applied and Technical Physics. --- Physical sciences --- Dynamics --- Inorganic compounds --- Optics --- Materials --- Hertzian waves --- Electric waves --- Electromagnetic waves --- Geomagnetic micropulsations --- Radio waves --- Shortwave radio --- Electronic materials. --- Optical engineering. --- Mechanical engineering --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Electronics --- Solid state electronics --- Electronic materials

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Computing systems are undergoing a transformation from logic-centric towards memory-centric architectures, where overall performance and energy efficiency at the system level are determined by the density, performance, functionality and efficiency of the memory, rather than the logic sub-system.

n/a --- image classification --- bipolar resistive switching characteristics --- bioelectronic devices --- self-directed channel (SDC) --- programmable ramp-down current pulses --- nanoparticles --- protein --- DRAM --- convolutional neural networks --- silicon oxide-based memristors --- electrochemical metallization cell --- magnetic tunnel junction --- power gating --- resistance switching mechanism --- BCH --- Fast Fourier Transform --- nucleic acid --- biomemory --- conductive filament --- resistive random access memory (RRAM) --- non-von Neumann architecture --- emerging technologies --- Galois field --- variability --- logic-in-memory --- charge spreading --- memristor --- Hebbian training --- crossbar --- quantum point contact --- SONOS --- bionanohybrid material --- ECG --- neuromorphic computing --- CUDA --- low-latency --- iBM --- Oxygen-related trap --- nonvolatile memory --- phase change memory --- floating gate --- non-von neumann architecture --- 3D-stacked --- STT-MRAM --- solution-based dielectric --- GPU --- Internet of things --- configurable logic-in-memory architecture --- memory wall --- biologic gate --- synaptic weight --- guide training --- ion conduction --- perpendicular Nano Magnetic Logic (pNML) --- Weibull distribution --- real-time system --- in-DRAM cache --- task placement --- dynamic voltage scaling --- MCU (microprogrammed control unit) --- wire resistance --- multi-level cell --- chalcogenide --- decoder --- character recognition --- matrix-vector multiplication --- hybrid --- magnetoresistive random access memory --- blockchain --- electrochemical metallization (ECM) --- RISC-V --- U-shape recessed channel --- neuromorphic system --- in-memory computing --- crossbar array --- associative processor --- low-power --- plasma treatment --- voltage-controlled magnetic anisotropy --- flash memory --- resistive memory --- analogue computing --- bioprocessor --- annealing temperatures --- data retention --- flip-flop --- low-power technique