Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Radiation detection is important in many fields, and it poses significant challenges for instrument designers. Radiation detection instruments, particularly for nuclear decommissioning and security applications, are required to operate in unknown environments and should detect and characterise radiation fields in real time. This book covers both theory and practice, and it solicits recent advances in radiation detection, with a particular focus on radiation detection instrument design, real-time data processing, radiation simulation and experimental work, robot design, control systems, task planning and radiation shielding.

Technology: general issues --- passive radiation detection --- gamma-ray --- neutron --- illicit trafficking --- national security --- non-proliferation --- ground-penetrating radar --- gamma ray detector --- sensor fusion --- nuclear wastes --- nuclear decommissioning --- radiation detection --- radiological characterisation --- rheology --- rapid prototyping --- radiation sensing technologies --- partial discharges --- scintillations --- air insulation --- photomultiplier --- COTS commercial MAPS --- radiation response --- integral time --- gain --- high-energy α-particle detection --- low voltage --- thick depletion width detectors --- remote-depth profiling --- gamma spectral analysis --- Bayesian inference --- uncertainty estimation --- radioactive nuclear waste --- radiological characterization --- low-resolution detector --- remote depth profiling --- radioisotope identification --- low-level radioactive contaminants --- spectrum-to-dose conversion operator --- G(E) function --- gaussian process regression --- dose rate uncertainty --- real-time dosimetry --- operational quantities --- plastic gamma spectra --- energy broadening correction --- Compton edge reconstruction --- deep learning --- deep autoencoder

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Radiation detection is important in many fields, and it poses significant challenges for instrument designers. Radiation detection instruments, particularly for nuclear decommissioning and security applications, are required to operate in unknown environments and should detect and characterise radiation fields in real time. This book covers both theory and practice, and it solicits recent advances in radiation detection, with a particular focus on radiation detection instrument design, real-time data processing, radiation simulation and experimental work, robot design, control systems, task planning and radiation shielding.

Technology: general issues --- passive radiation detection --- gamma-ray --- neutron --- illicit trafficking --- national security --- non-proliferation --- ground-penetrating radar --- gamma ray detector --- sensor fusion --- nuclear wastes --- nuclear decommissioning --- radiation detection --- radiological characterisation --- rheology --- rapid prototyping --- radiation sensing technologies --- partial discharges --- scintillations --- air insulation --- photomultiplier --- COTS commercial MAPS --- radiation response --- integral time --- gain --- high-energy α-particle detection --- low voltage --- thick depletion width detectors --- remote-depth profiling --- gamma spectral analysis --- Bayesian inference --- uncertainty estimation --- radioactive nuclear waste --- radiological characterization --- low-resolution detector --- remote depth profiling --- radioisotope identification --- low-level radioactive contaminants --- spectrum-to-dose conversion operator --- G(E) function --- gaussian process regression --- dose rate uncertainty --- real-time dosimetry --- operational quantities --- plastic gamma spectra --- energy broadening correction --- Compton edge reconstruction --- deep learning --- deep autoencoder

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

It is impossible to imagine the modern world without sensors, or without real-time information about almost everything—from local temperature to material composition and health parameters. We sense, measure, and process data and act accordingly all the time. In fact, real-time monitoring and information is key to a successful business, an assistant in life-saving decisions that healthcare professionals make, and a tool in research that could revolutionize the future. To ensure that sensors address the rapidly developing needs of various areas of our lives and activities, scientists, researchers, manufacturers, and end-users have established an efficient dialogue so that the newest technological achievements in all aspects of real-time sensing can be implemented for the benefit of the wider community. This book documents some of the results of such a dialogue and reports on advances in sensors and sensor systems for existing and emerging real-time monitoring applications.

IR-UWB radar sensor --- movement disorder --- hyperactivity --- actigraphy --- fertilizer --- phosphorus element --- laser-induced breakdown spectroscopy --- chemometrics --- high temperature pipe --- pipe wall thinning --- flow accelerated corrosion --- freeze-drying process diagnosis --- ultrasonic transducer (UT) --- freezing/drying point --- drying period --- electrostatic sensor --- digital approach --- rotational speed --- correlation algorithm --- underground structure safety --- train tracking --- incursion detection --- ultra-weak FBG --- distributed vibration --- dynamic measurement --- turbidity --- low-cost --- continuous water quality monitor --- water --- particle detection --- sensitivity --- resonance --- amorphous core --- signal extraction --- support vector regression --- grid method --- genetic algorithm --- particle swarm optimization --- least squares --- railway crossing --- condition monitoring --- condition indicator --- correlation analysis --- weather impact --- numerical verification --- smartphone colorimetrics --- lateral flow assay quantification --- color space --- image correction --- food contaminant screening --- allergens --- background correction --- point of site analyses --- soil salinity --- soil water content --- FDR sensor --- soil pore water electrical conductivity --- sensor calibration and validation --- real time monitoring --- diesel engine --- condition recognition --- CNN --- LSTM --- adaptive dropout --- parallel position --- bridge structure --- temperature --- vibrating wire strain sensor --- traveling wave ultrasonic motor --- pre-pressure --- contact state --- power dissipation --- optimization criterion --- wheel-rail impact --- train hunting --- railway track maintenance --- highly nonlinear solitary waves --- nondestructive evaluation --- wireless sensing --- Bluetooth technology --- water quality --- real-time monitoring --- multisensor system --- molecularly imprinted polymers --- functionalised coating --- microwave spectroscopy --- body condition score --- 3D surface roughness parameters --- rotary parlor --- 3D camera --- regression analysis --- satellite compass --- accuracy --- spectrum analysis --- Fourier transform

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits.

Technology: general issues --- GaN --- high-electron-mobility transistor (HEMT) --- ultra-wide band gap --- GaN-based vertical-cavity surface-emitting laser (VCSEL) --- composition-graded AlxGa1−xN electron blocking layer (EBL) --- electron leakage --- GaN laser diode --- distributed feedback (DFB) --- surface gratings --- sidewall gratings --- AlGaN/GaN --- proton irradiation --- time-dependent dielectric breakdown (TDDB) --- reliability --- normally off --- power cycle test --- SiC micro-heater chip --- direct bonded copper (DBC) substrate --- Ag sinter paste --- wide band-gap (WBG) --- thermal resistance --- amorphous InGaZnO --- thin-film transistor --- nitrogen-doping --- buried-channel --- stability --- 4H-SiC --- turn-off loss --- ON-state voltage --- breakdown voltage (BV) --- IGBT --- wide-bandgap semiconductor --- high electron mobility transistors --- vertical gate structure --- normally-off operation --- gallium nitride --- asymmetric multiple quantum wells --- barrier thickness --- InGaN laser diodes --- optical absorption loss --- electron leakage current --- wide band gap semiconductors --- numerical simulation --- terahertz Gunn diode --- grooved-anode diode --- Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) --- vertical breakdown voltage --- buffer trapping effect --- gallium nitride (GaN) --- power switching device --- active power filter (APF) --- power quality (PQ) --- metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) --- recessed gate --- double barrier --- high-electron-mobility transistors --- copper metallization --- millimeter wave --- wide bandgap semiconductors --- flexible devices --- silver nanoring --- silver nanowire --- polyol method --- cosolvent --- tungsten trioxide film --- spin coating --- optical band gap --- morphology --- electrochromism --- self-align --- hierarchical nanostructures --- ZnO nanorod/NiO nanosheet --- photon extraction efficiency --- photonic emitter --- wideband --- HEMT --- power amplifier --- jammer system --- GaN 5G --- high electron mobility transistors (HEMT) --- new radio --- RF front-end --- AESA radars --- transmittance --- distortions --- optimization --- GaN-on-GaN --- schottky barrier diodes --- high-energy α-particle detection --- low voltage --- thick depletion width detectors --- n/a

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits.

Technology: general issues --- GaN --- high-electron-mobility transistor (HEMT) --- ultra-wide band gap --- GaN-based vertical-cavity surface-emitting laser (VCSEL) --- composition-graded AlxGa1−xN electron blocking layer (EBL) --- electron leakage --- GaN laser diode --- distributed feedback (DFB) --- surface gratings --- sidewall gratings --- AlGaN/GaN --- proton irradiation --- time-dependent dielectric breakdown (TDDB) --- reliability --- normally off --- power cycle test --- SiC micro-heater chip --- direct bonded copper (DBC) substrate --- Ag sinter paste --- wide band-gap (WBG) --- thermal resistance --- amorphous InGaZnO --- thin-film transistor --- nitrogen-doping --- buried-channel --- stability --- 4H-SiC --- turn-off loss --- ON-state voltage --- breakdown voltage (BV) --- IGBT --- wide-bandgap semiconductor --- high electron mobility transistors --- vertical gate structure --- normally-off operation --- gallium nitride --- asymmetric multiple quantum wells --- barrier thickness --- InGaN laser diodes --- optical absorption loss --- electron leakage current --- wide band gap semiconductors --- numerical simulation --- terahertz Gunn diode --- grooved-anode diode --- Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) --- vertical breakdown voltage --- buffer trapping effect --- gallium nitride (GaN) --- power switching device --- active power filter (APF) --- power quality (PQ) --- metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) --- recessed gate --- double barrier --- high-electron-mobility transistors --- copper metallization --- millimeter wave --- wide bandgap semiconductors --- flexible devices --- silver nanoring --- silver nanowire --- polyol method --- cosolvent --- tungsten trioxide film --- spin coating --- optical band gap --- morphology --- electrochromism --- self-align --- hierarchical nanostructures --- ZnO nanorod/NiO nanosheet --- photon extraction efficiency --- photonic emitter --- wideband --- HEMT --- power amplifier --- jammer system --- GaN 5G --- high electron mobility transistors (HEMT) --- new radio --- RF front-end --- AESA radars --- transmittance --- distortions --- optimization --- GaN-on-GaN --- schottky barrier diodes --- high-energy α-particle detection --- low voltage --- thick depletion width detectors