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In this book, we study theoretical and practical aspects of computing methods for mathematical modelling of nonlinear systems. A number of computing techniques are considered, such as methods of operator approximation with any given accuracy; operator interpolation techniques including a non-Lagrange interpolation; methods of system representation subject to constraints associated with concepts of causality, memory and stationarity; methods of system representation with an accuracy that is the best within a given class of models; methods of covariance matrix estimation;methods for low-rank

Mathematical physics --- Padé approximant --- Physique mathématique --- Padé, Approximants de --- Padé approximant --- Mathematical physics. --- Padé approximant. --- Physique mathématique --- Padé, Approximants de --- ELSEVIER-B EPUB-LIV-FT --- Padé approximant. --- Approximant, Padé --- Approximation theory --- Continued fractions --- Polynomials --- Power series --- Physical mathematics --- Physics --- Mathematics --- Approximation rationnelle --- Convergence --- Theoretical physics --- Pade approximant.

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In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

History of engineering & technology --- random dopant --- drift-diffusion --- variability --- device simulation --- nanodevice --- screening --- Coulomb interaction --- III-V --- TASE --- MOSFETs --- Integration --- nanowire field-effect transistors --- silicon nanomaterials --- charge transport --- one-dimensional multi-subband scattering models --- Kubo–Greenwood formalism --- schrödinger-poisson solvers --- DC and AC characteristic fluctuations --- gate-all-around --- nanowire --- work function fluctuation --- aspect ratio of channel cross-section --- timing fluctuation --- noise margin fluctuation --- power fluctuation --- CMOS circuit --- statistical device simulation --- variability effects --- Monte Carlo --- Schrödinger based quantum corrections --- quantum modeling --- nonequilibrium Green’s function --- nanowire transistor --- electron–phonon interaction --- phonon–phonon interaction --- self-consistent Born approximation --- lowest order approximation --- Padé approximants --- Richardson extrapolation --- ZnO --- field effect transistor --- conduction mechanism --- metal gate --- material properties --- fabrication --- modelling --- nanojunction --- constriction --- quantum electron transport --- quantum confinement --- dimensionality reduction --- stochastic Schrödinger equations --- geometric correlations --- silicon nanowires --- nano-transistors --- quantum transport --- hot electrons --- self-cooling --- nano-cooling --- thermoelectricity --- heat equation --- non-equilibrium Green functions --- power dissipation

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

History of engineering & technology --- random dopant --- drift-diffusion --- variability --- device simulation --- nanodevice --- screening --- Coulomb interaction --- III-V --- TASE --- MOSFETs --- Integration --- nanowire field-effect transistors --- silicon nanomaterials --- charge transport --- one-dimensional multi-subband scattering models --- Kubo–Greenwood formalism --- schrödinger-poisson solvers --- DC and AC characteristic fluctuations --- gate-all-around --- nanowire --- work function fluctuation --- aspect ratio of channel cross-section --- timing fluctuation --- noise margin fluctuation --- power fluctuation --- CMOS circuit --- statistical device simulation --- variability effects --- Monte Carlo --- Schrödinger based quantum corrections --- quantum modeling --- nonequilibrium Green’s function --- nanowire transistor --- electron–phonon interaction --- phonon–phonon interaction --- self-consistent Born approximation --- lowest order approximation --- Padé approximants --- Richardson extrapolation --- ZnO --- field effect transistor --- conduction mechanism --- metal gate --- material properties --- fabrication --- modelling --- nanojunction --- constriction --- quantum electron transport --- quantum confinement --- dimensionality reduction --- stochastic Schrödinger equations --- geometric correlations --- silicon nanowires --- nano-transistors --- quantum transport --- hot electrons --- self-cooling --- nano-cooling --- thermoelectricity --- heat equation --- non-equilibrium Green functions --- power dissipation