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This document includes a definition of the concept of modulation frequencies for light-emitting diodes (LEDs), a discussion on their applications to LED lighting, a description of LED lighting applications in which modulation frequencies pose possible health risks to users, a discussion of the dimming of LEDs by modulating the frequency of driving currents-voltage, and recommendations for modulation frequencies (flicker) for LED lighting and dimming applications to help protect against known potential adverse health effects.
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Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used--the Angelov (or Chalmers) model.
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This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.
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Modulation-doped field-effect transistors. --- Modulation-doped field-effect transistors --- HEMTs (Transistors) --- HFETs (Transistors) --- Hetero-field-effect transistors --- High-electron-mobility transistors --- MODFETs (Transistors) --- SDHTs (Transistors) --- Selectively-doped heterojunction transistors --- TEGFETs (Transistors) --- Two-dimensional electron gas field-effect transistors --- Field-effect transistors
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Modulation-doped field-effect transistors. --- HEMTs (Transistors) --- HFETs (Transistors) --- Hetero-field-effect transistors --- High-electron-mobility transistors --- MODFETs (Transistors) --- SDHTs (Transistors) --- Selectively-doped heterojunction transistors --- TEGFETs (Transistors) --- Two-dimensional electron gas field-effect transistors --- Field-effect transistors
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Appareils à ondes millimétriques --- Circuits pour micro-ondes --- Computer-aided design --- Computergestuurd ontwerpen --- Conception assistée par ordinateur --- Microwave circuits --- Millimeter wave devices --- Millimetergolvenapparaten --- Modulation-doped field-effect transistors --- Ontwerpen [Computergestuurd ] --- Schakelingen voor microgolven --- Computer aided design --- Microwave integrated circuits --- Millimeter-wave devices --- Design and construction --- Modulation-doped field-effect transistors - Design and construction --- Microwave integrated circuits - Design and construction --- Millimeter-wave devices - Design and construction
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Microwave transistors --- Gallium arsenide semiconductors --- Metal-semiconductor field-effect transistors --- Modulation-doped field-effect transistors --- Transistor circuits --- Data processing --- Mathematical models --- 543.422 --- -Metal-semiconductor field-effect transistors --- -Modulation-doped field-effect transistors --- -Transistor circuits --- -Transistors, Microwave --- Microwave devices --- Transistors --- Electronic circuits --- HEMTs (Transistors) --- HFETs (Transistors) --- Hetero-field-effect transistors --- High-electron-mobility transistors --- MODFETs (Transistors) --- SDHTs (Transistors) --- Selectively-doped heterojunction transistors --- TEGFETs (Transistors) --- Two-dimensional electron gas field-effect transistors --- Field-effect transistors --- MESFETs (Metal semiconductor field-effect transistors) --- Schottky gate field-effect transistors --- Semiconductors --- Absorption spectra (radiation of different wavelengths) --- -Absorption spectra (radiation of different wavelengths) --- 543.422 Absorption spectra (radiation of different wavelengths) --- -543.422 Absorption spectra (radiation of different wavelengths) --- Transistors, Microwave --- Microwave transistors - Data processing --- Gallium arsenide semiconductors - Data processing --- Metal-semiconductor field-effect transistors - Data processing --- Modulation-doped field-effect transistors - Data processing --- Transistor circuits - Mathematical models
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Modulation-doped field-effect transistors. --- Gallium nitride. --- Wide gap semiconductors. --- Wide band gap semiconductors --- Wide bandgap semiconductors --- Semiconductors --- Gallium compounds --- Nitrides --- HEMTs (Transistors) --- HFETs (Transistors) --- Hetero-field-effect transistors --- High-electron-mobility transistors --- MODFETs (Transistors) --- SDHTs (Transistors) --- Selectively-doped heterojunction transistors --- TEGFETs (Transistors) --- Two-dimensional electron gas field-effect transistors --- Field-effect transistors
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