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This document includes a definition of the concept of modulation frequencies for light-emitting diodes (LEDs), a discussion on their applications to LED lighting, a description of LED lighting applications in which modulation frequencies pose possible health risks to users, a discussion of the dimming of LEDs by modulating the frequency of driving currents-voltage, and recommendations for modulation frequencies (flicker) for LED lighting and dimming applications to help protect against known potential adverse health effects.

Modulation-doped field-effect transistors.

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Metal semiconductor field-effect transistors --- Modulation-doped field-effect transistors --- Gallium arsenide semiconductors --- Digital integrated circuits

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This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.

Electrical engineering --- Computer. Automation --- algoritmen --- elektrische circuits --- Modulation-doped field-effect transistors. --- Radio frequency integrated circuits. --- Semiconductors.

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Modulation-doped field-effect transistors. --- HEMTs (Transistors) --- HFETs (Transistors) --- Hetero-field-effect transistors --- High-electron-mobility transistors --- MODFETs (Transistors) --- SDHTs (Transistors) --- Selectively-doped heterojunction transistors --- TEGFETs (Transistors) --- Two-dimensional electron gas field-effect transistors --- Field-effect transistors

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Microwave transistors --- Gallium arsenide semiconductors --- Metal-semiconductor field-effect transistors --- Modulation-doped field-effect transistors --- Transistor circuits --- Data processing --- Mathematical models --- 543.422 --- -Metal-semiconductor field-effect transistors --- -Modulation-doped field-effect transistors --- -Transistor circuits --- -Transistors, Microwave --- Microwave devices --- Transistors --- Electronic circuits --- HEMTs (Transistors) --- HFETs (Transistors) --- Hetero-field-effect transistors --- High-electron-mobility transistors --- MODFETs (Transistors) --- SDHTs (Transistors) --- Selectively-doped heterojunction transistors --- TEGFETs (Transistors) --- Two-dimensional electron gas field-effect transistors --- Field-effect transistors --- MESFETs (Metal semiconductor field-effect transistors) --- Schottky gate field-effect transistors --- Semiconductors --- Absorption spectra (radiation of different wavelengths) --- -Absorption spectra (radiation of different wavelengths) --- 543.422 Absorption spectra (radiation of different wavelengths) --- -543.422 Absorption spectra (radiation of different wavelengths) --- Transistors, Microwave --- Microwave transistors - Data processing --- Gallium arsenide semiconductors - Data processing --- Metal-semiconductor field-effect transistors - Data processing --- Modulation-doped field-effect transistors - Data processing --- Transistor circuits - Mathematical models