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Book
Modeling nanowire and double-gate junctionless field-effect transistors
Authors: ---
ISBN: 1108581390 1316676897 1108557538 Year: 2018 Publisher: Cambridge : Cambridge University Press,

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Abstract

The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.

Applications of GaAs MESFETs
Authors: --- ---
ISBN: 0890061203 Year: 1983 Publisher: Dedham Artech house

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Gallium arsenide : materials, devices and circuits
Authors: ---
ISBN: 0471900486 9780471900481 Year: 1985 Volume: vol *2 Publisher: Chichester New York Toronto Wiley

Gallium arsenide digital circuits
Author:
ISBN: 0792390814 9780792390817 Year: 1990 Publisher: Boston: Kluwer,

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GaAs MESFET circuit design.
Author:
ISBN: 0890062676 9780890062678 Year: 1988 Publisher: Boston Artech house

Microwave MESFETs and HEMTs.
Author:
ISBN: 0890064261 9780890064269 Year: 1991 Publisher: Boston Artech house

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Microwave field-effect transistors : theory, design and applications.
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ISBN: 0471102083 Year: 1984 Publisher: Chichester Research studies press


Book
Device Physics, Modeling, Technology, and Analysis for Silicon MESFET
Authors: --- ---
ISBN: 3030045137 3030045129 Year: 2019 Publisher: Cham : Springer International Publishing : Imprint: Springer,

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This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications. Describes the evolution of MESFET in the semiconductor industry; Discusses challenges and solutions associated with downscaling; Provides comprehensive information on the structure and operation of silicon MESFETs.

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