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Systematically discusses the growth method, material properties, and applications for key semiconductor materialsMOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics.Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique.Covers, in order, the growth method, material properties, and applications for each materialIncludes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoringLooks at important materials such as III-V and II-VI compounds, quantum dots, and nanowiresProvides topical and wide-ranging coverage from well-known authors in the fieldPart of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Metal organic chemical vapor deposition

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This dissertation by Hengfang Zhang investigates the development of N-polar group-III nitride materials, focusing on their application in high electron mobility transistors (HEMTs). It explores the use of hot-wall metal-organic chemical vapor deposition (MOCVD) to grow high-quality N-polar AlN and GaN on SiC substrates. The study aims to enhance device performance for radio frequency (RF) applications, such as power amplifiers and 5G wireless base stations. The research addresses challenges like high surface roughness and polarity inversion, using advanced microscopy techniques to analyze atomic arrangements and polarity. Intended for academics and professionals in semiconductor technology, the work is supported by various Swedish research institutions.

Metal organic chemical vapor deposition. --- Gallium nitride.

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Compound semiconductors --- Crystal growth --- Epitaxy --- Metal organic chemical vapor deposition

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Zinc oxide thin films. --- Metal organic chemical vapor deposition.

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This book describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices. It contains not only a fundamental description of the operation of the technique but also contains lists of data useful for the everyday operation of OMVPE reactors. It also offers specific recipes that can be used to produce a wide range of specific materials, structures, and devices.Key Features*

Compound semiconductors. --- Metallic organic chemical vapor deposition. --- Compound semiconductors --- Metal organic chemical vapor deposition