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About 120 years ago, James Clerk Maxwell introduced his now legendary hypothetical "demon" as a challenge to the integrity of the second law of thermodynamics. Fascination with the demon persisted throughout the development of statistical and quantum physics, information theory, and computer science--and linkages have been established between Maxwell's demon and each of these disciplines. The demon's seductive quality makes it appealing to physical scientists, engineers, computer scientists, biologists, psychologists, and historians and philosophers of science. Until now its important source material has been scattered throughout diverse journals.This book brings under one cover twenty-five reprints, including seminal works by Maxwell and William Thomson; historical reviews by Martin Klein, Edward Daub, and Peter Heimann; information theoretic contributions by Leo Szilard, Leon Brillouin, Dennis Gabor, and Jerome Rothstein; and innovations by Rolf Landauer and Charles Bennett illustrating linkages with the limits of computation. An introductory chapter summarizes the demon's life, from Maxwell's illustration of the second law's statistical nature to the most recent "exorcism" of the demon based on a need periodically to erase its memory. An annotated chronological bibliography is included.Originally published in 1990.The Princeton Legacy Library uses the latest print-on-demand technology to again make available previously out-of-print books from the distinguished backlist of Princeton University Press. These editions preserve the original texts of these important books while presenting them in durable paperback and hardcover editions. The goal of the Princeton Legacy Library is to vastly increase access to the rich scholarly heritage found in the thousands of books published by Princeton University Press since its founding in 1905.

Thermodynamics. --- Chemistry, Physical and theoretical --- Dynamics --- Mechanics --- Physics --- Heat --- Heat-engines --- Quantum theory --- Maxwell's demon. --- Adiabatic process. --- Automaton. --- Available energy (particle collision). --- Billiard-ball computer. --- Black hole information paradox. --- Black hole thermodynamics. --- Black-body radiation. --- Boltzmann's entropy formula. --- Boyle's law. --- Calculation. --- Carnot's theorem (thermodynamics). --- Catalysis. --- Chaos theory. --- Computation. --- Copying. --- Creation and annihilation operators. --- Digital physics. --- Dissipation. --- Distribution law. --- Domain wall. --- EPR paradox. --- Energy level. --- Entropy of mixing. --- Entropy. --- Exchange interaction. --- Expectation value (quantum mechanics). --- Extrapolation. --- Fair coin. --- Fermi–Dirac statistics. --- Gibbs free energy. --- Gibbs paradox. --- Guessing. --- Halting problem. --- Hamiltonian mechanics. --- Heat engine. --- Heat. --- Helmholtz free energy. --- Ideal gas. --- Idealization. --- Information theory. --- Instant. --- Internal energy. --- Irreversible process. --- James Prescott Joule. --- Johnson–Nyquist noise. --- Kinetic theory of gases. --- Laws of thermodynamics. --- Least squares. --- Loschmidt's paradox. --- Ludwig Boltzmann. --- Maxwell–Boltzmann distribution. --- Mean free path. --- Measurement. --- Mechanical equivalent of heat. --- Microscopic reversibility. --- Molecule. --- Negative temperature. --- Negentropy. --- Newton's law of universal gravitation. --- Nitrous oxide. --- Non-equilibrium thermodynamics. --- Old quantum theory. --- Particle in a box. --- Perpetual motion. --- Photon. --- Probability. --- Quantity. --- Quantum limit. --- Quantum mechanics. --- Rectangular potential barrier. --- Result. --- Reversible computing. --- Reversible process (thermodynamics). --- Richard Feynman. --- Rolf Landauer. --- Rudolf Clausius. --- Scattering. --- Schrödinger equation. --- Second law of thermodynamics. --- Self-information. --- Spontaneous process. --- Standard state. --- Statistical mechanics. --- Superselection. --- Temperature. --- Theory of heat. --- Theory. --- Thermally isolated system. --- Thermodynamic equilibrium. --- Thermodynamic system. --- Thought experiment. --- Turing machine. --- Ultimate fate of the universe. --- Uncertainty principle. --- Unitarity (physics). --- Van der Waals force. --- Wave function collapse. --- Work output.

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In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before.

Research & information: general --- Mathematics & science --- FinFETs --- CMOS --- device processing --- integrated circuits --- silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) --- solid state circuit breaker (SSCB) --- prototype --- circuit design --- GaN --- HEMT --- high gate --- multi-recessed buffer --- power density --- power-added efficiency --- 4H-SiC --- MESFET --- IMRD structure --- power added efficiency --- 1200 V SiC MOSFET --- body diode --- surge reliability --- silvaco simulation --- floating gate transistor --- control gate --- CMOS device --- active noise control --- vacuum channel --- mean free path --- vertical air-channel diode --- vertical transistor --- field emission --- particle trajectory model --- F-N plot --- space-charge-limited currents --- 4H-SiC MESFET --- simulation --- power added efficiency (PAE) --- new device --- three-input transistor --- T-channel --- compact circuit style --- CMOS compatible technology --- avalanche photodiode --- SPICE model --- bandwidth --- high responsivity --- silicon photodiode --- AlGaN/GaN HEMTs --- thermal simulation --- transient channel temperature --- pulse width --- gate structures --- band-to-band tunnelling (BTBT) --- tunnelling field-effect transistor (TFET) --- germanium-around-source gate-all-around TFET (GAS GAA TFET) --- average subthreshold swing --- direct source-to-drain tunneling --- transport effective mass --- confinement effective mass --- multi-subband ensemble Monte Carlo --- non-equilibrium Green's function --- DGSOI --- FinFET --- core-insulator --- gate-all-around --- field effect transistor --- GAA --- nanowire --- one-transistor dynamic random-access memory (1T-DRAM) --- polysilicon --- grain boundary --- electron trapping --- flexible transistors --- polymers --- metal oxides --- nanocomposites --- dielectrics --- active layers --- nanotransistor --- quantum transport --- Landauer-Büttiker formalism --- R-matrix method --- nanoscale --- mosfet --- quantum current --- surface transfer doping --- 2D hole gas (2DHG) --- diamond --- MoO3 --- V2O5 --- MOSFET --- reliability --- random telegraph noise --- oxide defects --- SiO2 --- split-gate trench power MOSFET --- multiple epitaxial layers --- specific on-resistance --- device reliability --- nanoscale transistor --- bias temperature instabilities (BTI) --- defects --- single-defect spectroscopy --- non-radiative multiphonon (NMP) model --- time-dependent defect spectroscopy --- FinFETs --- CMOS --- device processing --- integrated circuits --- silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) --- solid state circuit breaker (SSCB) --- prototype --- circuit design --- GaN --- HEMT --- high gate --- multi-recessed buffer --- power density --- power-added efficiency --- 4H-SiC --- MESFET --- IMRD structure --- power added efficiency --- 1200 V SiC MOSFET --- body diode --- surge reliability --- silvaco simulation --- floating gate transistor --- control gate --- CMOS device --- active noise control --- vacuum channel --- mean free path --- vertical air-channel diode --- vertical transistor --- field emission --- particle trajectory model --- F-N plot --- space-charge-limited currents --- 4H-SiC MESFET --- simulation --- power added efficiency (PAE) --- new device --- three-input transistor --- T-channel --- compact circuit style --- CMOS compatible technology --- avalanche photodiode --- SPICE model --- bandwidth --- high responsivity --- silicon photodiode --- AlGaN/GaN HEMTs --- thermal simulation --- transient channel temperature --- pulse width --- gate structures --- band-to-band tunnelling (BTBT) --- tunnelling field-effect transistor (TFET) --- germanium-around-source gate-all-around TFET (GAS GAA TFET) --- average subthreshold swing --- direct source-to-drain tunneling --- transport effective mass --- confinement effective mass --- multi-subband ensemble Monte Carlo --- non-equilibrium Green's function --- DGSOI --- FinFET --- core-insulator --- gate-all-around --- field effect transistor --- GAA --- nanowire --- one-transistor dynamic random-access memory (1T-DRAM) --- polysilicon --- grain boundary --- electron trapping --- flexible transistors --- polymers --- metal oxides --- nanocomposites --- dielectrics --- active layers --- nanotransistor --- quantum transport --- Landauer-Büttiker formalism --- R-matrix method --- nanoscale --- mosfet --- quantum current --- surface transfer doping --- 2D hole gas (2DHG) --- diamond --- MoO3 --- V2O5 --- MOSFET --- reliability --- random telegraph noise --- oxide defects --- SiO2 --- split-gate trench power MOSFET --- multiple epitaxial layers --- specific on-resistance --- device reliability --- nanoscale transistor --- bias temperature instabilities (BTI) --- defects --- single-defect spectroscopy --- non-radiative multiphonon (NMP) model --- time-dependent defect spectroscopy