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ISBN: 1479982733 1479982725 Year: 2015 Publisher: Piscataway, New Jersey : IEEE,
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Covers the fields of terahertz technology and science, millimeter waves and infrared techniques.
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ISBN: 1467384852 1467384860 Year: 2016 Publisher: Piscataway : IEEE,
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Annotation Science, technology, instruments and applications from 30 GHz to 10 microns.
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ISBN: 1728194245 1728194253 Year: 2021 Publisher: Piscataway, NJ : IEEE,
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Year: 1962 Publisher: New York (N.Y.) : Wiley,
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ISBN: 9781856173889 1856173887 9780080507910 0080507913 1281060305 9781281060303 9786611060305 Year: 2002 Publisher: New York : Elsevier Advanced Technology,
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The use of lasers which emit infra-red radiation and sophisticated detectors of IR radiation is increasing dramatically: they are being used for long-distance fibre-optic communications and remote environmental monitoring and sensing. Thus they are of interest to the telecommunications industry and the military in particular. This book has been designed to bring together what is known on these devices, using an international group of contributors.
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Year: 1983 Publisher: Piscataway, New Jersey : IEEE,
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The bismuth microbolometer is a simple, easily made detector suitable for use throughout the far-infrared. A novel photoresist fabrication procedure has made it possible to obtain an electrical NEP of 2.8×10⁻¹¹ W (Hz)^(−1/2) at 100kHz for an airbridge bolometer. By using a polyimide plastic as an insulator, conventional substrate-supported devices with an NEP of 3.2×10⁻¹¹ W(Hz)^(−1/2) have also been made.
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ISBN: 3421025533 Year: 1980 Publisher: Stuttgart Deutsche Verlags-Anstalt
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ISBN: 0892525487 Year: 1985 Publisher: Bellingham SPIE-the International Society for Optical Engineering
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Year: 1983 Publisher: Piscataway, New Jersey : IEEE,
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The bismuth microbolometer is a simple, easily made detector suitable for use throughout the far-infrared. A novel photoresist fabrication procedure has made it possible to obtain an electrical NEP of 2.8×10⁻¹¹ W (Hz)^(−1/2) at 100kHz for an airbridge bolometer. By using a polyimide plastic as an insulator, conventional substrate-supported devices with an NEP of 3.2×10⁻¹¹ W(Hz)^(−1/2) have also been made.
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Year: 1966 Publisher: Paris : Beckman,
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