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Hot carriers --- Nanostructures --- Semiconductors --- Congresses --- Congresses --- Congresses

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Nonlinear transport phenomena are an increasingly important aspect of modern semiconductor research. Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors deals with complex nonlinear dynamics, pattern formation, and chaotic behaviour in such systems. In doing so it bridges the gap between two well-established fields: the theory of dynamic systems, and nonlinear charge transport in semiconductors. This unified approach is used to consider important electronic transport instabilities. The initial chapters lay a general framework for the theoretical description of nonlinear self-organized spatio-temporal patterns, like current filaments, field domains, fronts, and analysis of their stability. Later chapters consider important model systems in detail: impact ionization induced impurity breakdown, Hall instabilities, superlattices, and low-dimensional structures. State-of-the-art results include chaos control, spatio-temporal chaos, multistability, pattern selection, activator-inhibitor kinetics, and global coupling, linking fundamental issues to electronic device applications. This book will be of great value to semiconductor physicists and nonlinear scientists alike.

Hot carriers. --- Transport theory. --- Nonlinear theories. --- Semiconductors. --- Chaotic behavior in systems.

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Hot carriers --- Transport theory --- Nonlinear theories --- Semiconductors --- Chaotic behavior in systems --- Transport, Théorie du --- Théories non linéaires --- Semiconducteurs --- Chaos

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Integrated circuits --- Metal oxide semiconductors --- Hot carriers --- Very large scale integration --- Defects --- Mathematical models --- Reliability --- -Metal oxide semiconductors --- -Unipolar transistors --- Semiconductors --- Transistors --- Charge coupled devices --- Carriers, Hot --- Hot carrier conduction --- Hot electrons --- Electrons --- Holes (Electron deficiencies) --- -Mathematical models --- -Reliability --- Unipolar transistors --- Chips (Electronics) --- Circuits, Integrated --- Computer chips --- Microchips --- Electronic circuits --- Microelectronics --- Reliability&delete& --- Very large scale integration&delete& --- Defects&delete& --- Integrated circuits - Very large scale integration - Defects - Mathematical models --- Metal oxide semiconductors - Reliability - Mathematical models --- Hot carriers - Reliability - Mathematical models

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This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices.  Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance. • Describes the intricacies of hot carrier degradation in modern semiconductor technologies; • Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier transport, carrier-defect interaction, technological impact, circuit impact, etc.; • Enables detailed understanding of carrier transport, interaction of the carrier ensemble with the defect precursors, and an accurate assessment of how the newly created defects impact the device performance. • Covers modeling issues starting from detailed physics-based TCAD approaches up to efficient SPICE-compatible compact models. “Tibor Grasser and the authors of Hot Carrier Degradation in Semiconductor Devices have made a major contribution to the field of hot-carrier degradation. I am emeritus since 2006 and believe that, after reading these great chapters, I could work again at the cutting edge of hot-carrier transport, from the basic physics to modern device function and from compact modeling to detailed Monte Carlo simulations.  This is a must read for anyone interested in the reliability of semiconductor devices.” Karl Hess Swanlund Professor Emeritus University of Illinois, USA “Very few books can be found with special focus on microelectronics reliability. Written by noted experts in the field, this book offers a revealing look at various aspects of the hot carrier effect and associated device degradations. It provides a valuable reference on hot carrier related physics, experimental measurements, modeling, and practical demonstration on state-of-the-art devices.  Engineering professionals, researchers, and students can use this book to save time and learn from the experts, with a quick overview of an important class of semiconductor devices and focus on device reliability physics.” Steve Chung Chair Professor National Chiao Tung University, Taiwan.

Engineering. --- Circuits and Systems. --- Electronic Circuits and Devices. --- Electronics and Microelectronics, Instrumentation. --- Electronics. --- Systems engineering. --- Ingénierie --- Electronique --- Ingénierie des systèmes --- Electrical & Computer Engineering --- Engineering & Applied Sciences --- Electrical Engineering --- Hot carriers. --- Semiconductors. --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Carriers, Hot --- Hot carrier conduction --- Hot electrons --- Electronic circuits. --- Microelectronics. --- Crystals --- Electrical engineering --- Electronics --- Solid state electronics --- Electrons --- Holes (Electron deficiencies) --- Semiconductors --- Materials --- Physical sciences --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Design and construction --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Microtechnology --- Miniature electronic equipment --- Electron-tube circuits --- Electric circuits --- Electron tubes