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Book
Applied Analysis of Ordinary Differential Equations
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ISBN: 3039217275 3039217267 Year: 2019 Publisher: MDPI - Multidisciplinary Digital Publishing Institute

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Abstract

One might say that ordinary differential equations (notably, in Isaac Newton’s analysis of the motion of celestial bodies) had a central role in the development of modern applied mathematics. This book is devoted to research articles which build upon this spirit: combining analysis with the applications of ordinary differential equations (ODEs). ODEs arise across a spectrum of applications in physics, engineering, geophysics, biology, chemistry, economics, etc., because the rules governing the time-variation of relevant fields is often naturally expressed in terms of relationships between rates of change. ODEs also emerge in stochastic models—for example, when considering the evolution of a probability density function—and in large networks of interconnected agents. The increasing ease of numerically simulating large systems of ODEs has resulted in a plethora of publications in this area; nevertheless, the difficulty of parametrizing models means that the computational results by themselves are sometimes questionable. Therefore, analysis cannot be ignored. This book comprises articles that possess both interesting applications and the mathematical analysis driven by such applications.


Book
Green's functions : construction and applications
Authors: ---
ISBN: 128059764X 9786613627476 3110253399 9783110253399 311025302X 9783110253023 9781280597640 661362747X Year: 2012 Publisher: Berlin ; Boston : De Gruyter,

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Green's functions represent one of the classical and widely used issues in the area of differential equations. This monograph is looking at applied elliptic and parabolic type partial differential equations in two variables. The elliptic type includes the Laplace, static Klein-Gordon and biharmonic equation. The parabolic type is represented by the classical heat equation and the Black-Scholes equation which has emerged as a mathematical model in financial mathematics. The book is attractive for practical needs: It contains many easily computable or computer friendly representations of Green's functions, includes all the standard Green's functions and many novel ones, and provides innovative and new approaches that might lead to Green's functions. The book is a useful source for everyone who is studying or working in the fields of science, finance, or engineering that involve practical solution of partial differential equations.


Book
Symmetries in Quantum Mechanics and Statistical Physics
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Year: 2021 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

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This book collects contributions to the Special Issue entitled "Symmetries in Quantum Mechanics and Statistical Physics" of the journal Symmetry. These contributions focus on recent advancements in the study of PT–invariance of non-Hermitian Hamiltonians, the supersymmetric quantum mechanics of relativistic and non-relativisitc systems, duality transformations for power–law potentials and conformal transformations. New aspects on the spreading of wave packets are also discussed.


Book
Symmetries in Quantum Mechanics and Statistical Physics
Author:
Year: 2021 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

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Abstract

This book collects contributions to the Special Issue entitled "Symmetries in Quantum Mechanics and Statistical Physics" of the journal Symmetry. These contributions focus on recent advancements in the study of PT–invariance of non-Hermitian Hamiltonians, the supersymmetric quantum mechanics of relativistic and non-relativisitc systems, duality transformations for power–law potentials and conformal transformations. New aspects on the spreading of wave packets are also discussed.


Book
Symmetries in Quantum Mechanics and Statistical Physics
Author:
Year: 2021 Publisher: Basel, Switzerland MDPI - Multidisciplinary Digital Publishing Institute

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Abstract

This book collects contributions to the Special Issue entitled "Symmetries in Quantum Mechanics and Statistical Physics" of the journal Symmetry. These contributions focus on recent advancements in the study of PT–invariance of non-Hermitian Hamiltonians, the supersymmetric quantum mechanics of relativistic and non-relativisitc systems, duality transformations for power–law potentials and conformal transformations. New aspects on the spreading of wave packets are also discussed.


Book
Nanoelectronic Materials, Devices and Modeling
Authors: ---
ISBN: 3039212265 3039212257 Year: 2019 Publisher: MDPI - Multidisciplinary Digital Publishing Institute

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As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.

Keywords

quantum mechanical --- n/a --- neuromorphic computation --- off-current (Ioff) --- double-gate tunnel field-effect-transistor --- topological insulator --- back current blocking layer (BCBL) --- CMOS power amplifier IC --- information integration --- distributed Bragg --- spike-timing-dependent plasticity --- electron affinity --- enhancement-mode --- current collapse --- gallium nitride (GaN) --- band-to-band tunneling --- vertical field-effect transistor (VFET) --- ionic liquid --- luminescent centres --- thermal coupling --- vision localization --- PC1D --- UAV --- ZnO/Si --- dual-switching transistor --- memristor --- field-effect transistor --- higher order synchronization --- shallow trench isolation (STI) --- memristive device --- on-current (Ion) --- low voltage --- reflection transmision method --- dielectric layer --- source/drain (S/D) --- high efficiency --- nanostructure synthesis --- InAlN/GaN heterostructure --- supercapacitor --- high-electron mobility transistor (HEMTs) --- heterojunction --- p-GaN --- recessed channel array transistor (RCAT) --- gate field effect --- charge injection --- saddle FinFET (S-FinFET) --- L-shaped tunnel field-effect-transistor --- conductivity --- energy storage --- hierarchical --- PECVD --- sample grating --- MISHEMT --- bistability --- threshold voltage (VTH) --- bandgap tuning --- oscillatory neural networks --- UV irradiation --- Mott transition --- third harmonic tuning --- topological magnetoelectric effect --- cross-gain modulation --- 2D material --- solar cells --- silicon on insulator (SOI) --- Green’s function --- optoelectronic devices --- semiconductor optical amplifier --- ZnO films --- graphene --- AlGaN/GaN --- polarization effect --- two-photon process --- conductive atomic force microscopy (cAFM) --- 2DEG density --- vanadium dioxide --- interface traps --- potential drop width (PDW) --- pattern recognition --- drain-induced barrier lowering (DIBL) --- atomic layer deposition (ALD) --- normally off power devices --- gate-induced drain leakage (GIDL) --- insulator–metal transition (IMT) --- zinc oxide --- synaptic device --- subthreshold slope (SS) --- landing --- silicon --- corner-effect --- conditioned reflex --- quantum dot --- gallium nitride --- bismuth ions --- conduction band offset --- variational form --- Green's function --- insulator-metal transition (IMT)


Book
Miniaturized Transistors
Authors: ---
ISBN: 3039210114 3039210106 Year: 2019 Publisher: MDPI - Multidisciplinary Digital Publishing Institute

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What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

Keywords

MOSFET --- n/a --- total ionizing dose (TID) --- low power consumption --- process simulation --- two-dimensional material --- negative-capacitance --- power consumption --- technology computer aided design (TCAD) --- thin-film transistors (TFTs) --- band-to-band tunneling (BTBT) --- nanowires --- inversion channel --- metal oxide semiconductor field effect transistor (MOSFET) --- spike-timing-dependent plasticity (STDP) --- field effect transistor --- segregation --- systematic variations --- Sentaurus TCAD --- indium selenide --- nanosheets --- technology computer-aided design (TCAD) --- high-? dielectric --- subthreshold bias range --- statistical variations --- fin field effect transistor (FinFET) --- compact models --- non-equilibrium Green’s function --- etching simulation --- highly miniaturized transistor structure --- compact model --- silicon nanowire --- surface potential --- Silicon-Germanium source/drain (SiGe S/D) --- nanowire --- plasma-aided molecular beam epitaxy (MBE) --- phonon scattering --- mobility --- silicon-on-insulator --- drain engineered --- device simulation --- variability --- semi-floating gate --- synaptic transistor --- neuromorphic system --- theoretical model --- CMOS --- ferroelectrics --- tunnel field-effect transistor (TFET) --- SiGe --- metal gate granularity --- buried channel --- ON-state --- bulk NMOS devices --- ambipolar --- piezoelectrics --- tunnel field effect transistor (TFET) --- FinFETs --- polarization --- field-effect transistor --- line edge roughness --- random discrete dopants --- radiation hardened by design (RHBD) --- low energy --- flux calculation --- doping incorporation --- low voltage --- topography simulation --- MOS devices --- low-frequency noise --- high-k --- layout --- level set --- process variations --- subthreshold --- metal gate stack --- electrostatic discharge (ESD) --- non-equilibrium Green's function


Book
A Themed Issue Dedicated to Professor John B. Goodenough on the Occasion of His 100th Birthday Anniversary
Authors: --- --- ---
Year: 2022 Publisher: Basel MDPI - Multidisciplinary Digital Publishing Institute

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Abstract

This book of Molecules is dedicated to Professor John B. Goodenough (born July 25, 1922, Jena, Germany), an American physicist, who won the 2019 Nobel Prize for Chemistry for his work on developing lithium-ion batteries.

Keywords

Research & information: general --- Chemistry --- Physical chemistry --- structure --- bonding --- physical properties --- collective or localized electrons --- exchange integral --- p-magnetism --- boron sub-oxide --- interstitial atoms --- DFT --- DOS --- ELF --- charge density plots --- bifunctional catalyst --- hybrid catalyst --- oxygen reduction reaction --- oxygen evolution reaction --- four-electron pathway --- lithium ionic conductor --- perovskite structure --- solid electrolyte --- oxide --- lithium-sulfur batteries --- tungsten oxide nanowire --- interlayer --- thiosulfate mediator --- Keywords: spin exchange --- magnetic orbitals --- ligand p-orbital tails --- M–L–M exchange --- M–L…L–M exchange --- α-CuV2O6 --- LiCuVO4 --- (CuCl)LaNb2O7 --- Cu3(CO3)2(OH)2 --- spin Hamiltonian --- magnetism --- energy-mapping analysis --- four-state method --- Green’s function method --- magnetic ground state --- spin exchange --- magnetic anisotropy --- molecular anion --- MPS3 --- qualitative rules --- batteries --- positive electrode --- vanadium phosphates --- covalent vanadyl bond --- mixed anion --- density functional theory --- quantum Monte Carlo --- fast Li+ ion conductor --- Li-ion battery --- spinel --- solid-state battery --- cathode-electrolyte interface --- indigo carmine --- solid polymer electrolyte --- solid state battery --- LMP® technology --- organic battery --- layered oxide cathodes --- alkali–alkali interactions --- electronic structure --- Li diffusion --- defect engineering --- perovskite electrolyte --- lithium-ion battery --- migration pathway --- anisotropic response --- cathode --- polyanion --- high-voltage --- n/a --- M-L-M exchange --- M-L...L-M exchange --- Green's function method --- alkali-alkali interactions


Book
A Themed Issue Dedicated to Professor John B. Goodenough on the Occasion of His 100th Birthday Anniversary
Authors: --- --- ---
Year: 2022 Publisher: Basel MDPI - Multidisciplinary Digital Publishing Institute

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Abstract

This book of Molecules is dedicated to Professor John B. Goodenough (born July 25, 1922, Jena, Germany), an American physicist, who won the 2019 Nobel Prize for Chemistry for his work on developing lithium-ion batteries.

Keywords

Research & information: general --- Chemistry --- Physical chemistry --- structure --- bonding --- physical properties --- collective or localized electrons --- exchange integral --- p-magnetism --- boron sub-oxide --- interstitial atoms --- DFT --- DOS --- ELF --- charge density plots --- bifunctional catalyst --- hybrid catalyst --- oxygen reduction reaction --- oxygen evolution reaction --- four-electron pathway --- lithium ionic conductor --- perovskite structure --- solid electrolyte --- oxide --- lithium-sulfur batteries --- tungsten oxide nanowire --- interlayer --- thiosulfate mediator --- Keywords: spin exchange --- magnetic orbitals --- ligand p-orbital tails --- M–L–M exchange --- M–L…L–M exchange --- α-CuV2O6 --- LiCuVO4 --- (CuCl)LaNb2O7 --- Cu3(CO3)2(OH)2 --- spin Hamiltonian --- magnetism --- energy-mapping analysis --- four-state method --- Green’s function method --- magnetic ground state --- spin exchange --- magnetic anisotropy --- molecular anion --- MPS3 --- qualitative rules --- batteries --- positive electrode --- vanadium phosphates --- covalent vanadyl bond --- mixed anion --- density functional theory --- quantum Monte Carlo --- fast Li+ ion conductor --- Li-ion battery --- spinel --- solid-state battery --- cathode-electrolyte interface --- indigo carmine --- solid polymer electrolyte --- solid state battery --- LMP® technology --- organic battery --- layered oxide cathodes --- alkali–alkali interactions --- electronic structure --- Li diffusion --- defect engineering --- perovskite electrolyte --- lithium-ion battery --- migration pathway --- anisotropic response --- cathode --- polyanion --- high-voltage --- n/a --- M-L-M exchange --- M-L...L-M exchange --- Green's function method --- alkali-alkali interactions


Book
A Themed Issue Dedicated to Professor John B. Goodenough on the Occasion of His 100th Birthday Anniversary
Authors: --- --- ---
Year: 2022 Publisher: Basel MDPI - Multidisciplinary Digital Publishing Institute

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Bookmark

Abstract

This book of Molecules is dedicated to Professor John B. Goodenough (born July 25, 1922, Jena, Germany), an American physicist, who won the 2019 Nobel Prize for Chemistry for his work on developing lithium-ion batteries.

Keywords

structure --- bonding --- physical properties --- collective or localized electrons --- exchange integral --- p-magnetism --- boron sub-oxide --- interstitial atoms --- DFT --- DOS --- ELF --- charge density plots --- bifunctional catalyst --- hybrid catalyst --- oxygen reduction reaction --- oxygen evolution reaction --- four-electron pathway --- lithium ionic conductor --- perovskite structure --- solid electrolyte --- oxide --- lithium-sulfur batteries --- tungsten oxide nanowire --- interlayer --- thiosulfate mediator --- Keywords: spin exchange --- magnetic orbitals --- ligand p-orbital tails --- M–L–M exchange --- M–L…L–M exchange --- α-CuV2O6 --- LiCuVO4 --- (CuCl)LaNb2O7 --- Cu3(CO3)2(OH)2 --- spin Hamiltonian --- magnetism --- energy-mapping analysis --- four-state method --- Green’s function method --- magnetic ground state --- spin exchange --- magnetic anisotropy --- molecular anion --- MPS3 --- qualitative rules --- batteries --- positive electrode --- vanadium phosphates --- covalent vanadyl bond --- mixed anion --- density functional theory --- quantum Monte Carlo --- fast Li+ ion conductor --- Li-ion battery --- spinel --- solid-state battery --- cathode-electrolyte interface --- indigo carmine --- solid polymer electrolyte --- solid state battery --- LMP® technology --- organic battery --- layered oxide cathodes --- alkali–alkali interactions --- electronic structure --- Li diffusion --- defect engineering --- perovskite electrolyte --- lithium-ion battery --- migration pathway --- anisotropic response --- cathode --- polyanion --- high-voltage --- n/a --- M-L-M exchange --- M-L...L-M exchange --- Green's function method --- alkali-alkali interactions

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