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Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
Technology: general issues --- graphene --- polycrystalline silicon --- photodiode --- phototransistor --- pixel --- high dynamic range (HDR) image --- Ni/4H-SiC Schottky barrier diodes (SBDs) --- C/Si ratios --- 1/f noise --- resonant cavity --- photodetectors --- near-infrared --- silicon --- p-Si/i-ZnO/n-AZO --- avalanche photodiode (APD) --- impact ionization coefficients --- GeSn alloys --- silicon photonics --- photonic integrated circuits --- microbolometer --- complementary metal oxide semiconductor (CMOS)-compatible --- uncooled infrared detectors --- thermal detectors --- infrared focal plane array (IRFPA) --- read-out integrated circuit (ROIC) --- photodetector --- semiconductor --- microphotonics --- group IV --- colloidal systems --- single-photon avalanche diode (SPAD) --- gating --- avalanche transients --- 3.3 V/0.35 µm complementary metal-oxide-semiconductor (CMOS) --- n/a
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Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
graphene --- polycrystalline silicon --- photodiode --- phototransistor --- pixel --- high dynamic range (HDR) image --- Ni/4H-SiC Schottky barrier diodes (SBDs) --- C/Si ratios --- 1/f noise --- resonant cavity --- photodetectors --- near-infrared --- silicon --- p-Si/i-ZnO/n-AZO --- avalanche photodiode (APD) --- impact ionization coefficients --- GeSn alloys --- silicon photonics --- photonic integrated circuits --- microbolometer --- complementary metal oxide semiconductor (CMOS)-compatible --- uncooled infrared detectors --- thermal detectors --- infrared focal plane array (IRFPA) --- read-out integrated circuit (ROIC) --- photodetector --- semiconductor --- microphotonics --- group IV --- colloidal systems --- single-photon avalanche diode (SPAD) --- gating --- avalanche transients --- 3.3 V/0.35 µm complementary metal-oxide-semiconductor (CMOS) --- n/a
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Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
Technology: general issues --- graphene --- polycrystalline silicon --- photodiode --- phototransistor --- pixel --- high dynamic range (HDR) image --- Ni/4H-SiC Schottky barrier diodes (SBDs) --- C/Si ratios --- 1/f noise --- resonant cavity --- photodetectors --- near-infrared --- silicon --- p-Si/i-ZnO/n-AZO --- avalanche photodiode (APD) --- impact ionization coefficients --- GeSn alloys --- silicon photonics --- photonic integrated circuits --- microbolometer --- complementary metal oxide semiconductor (CMOS)-compatible --- uncooled infrared detectors --- thermal detectors --- infrared focal plane array (IRFPA) --- read-out integrated circuit (ROIC) --- photodetector --- semiconductor --- microphotonics --- group IV --- colloidal systems --- single-photon avalanche diode (SPAD) --- gating --- avalanche transients --- 3.3 V/0.35 µm complementary metal-oxide-semiconductor (CMOS) --- graphene --- polycrystalline silicon --- photodiode --- phototransistor --- pixel --- high dynamic range (HDR) image --- Ni/4H-SiC Schottky barrier diodes (SBDs) --- C/Si ratios --- 1/f noise --- resonant cavity --- photodetectors --- near-infrared --- silicon --- p-Si/i-ZnO/n-AZO --- avalanche photodiode (APD) --- impact ionization coefficients --- GeSn alloys --- silicon photonics --- photonic integrated circuits --- microbolometer --- complementary metal oxide semiconductor (CMOS)-compatible --- uncooled infrared detectors --- thermal detectors --- infrared focal plane array (IRFPA) --- read-out integrated circuit (ROIC) --- photodetector --- semiconductor --- microphotonics --- group IV --- colloidal systems --- single-photon avalanche diode (SPAD) --- gating --- avalanche transients --- 3.3 V/0.35 µm complementary metal-oxide-semiconductor (CMOS)
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The first nonlinear optical effect was observed in the 19th century by John Kerr. Nonlinear optics, however, started to grow up only after the invention of the laser, when intense light sources became easily available. The seminal studies by Peter Franken and Nicolaas Bloembergen, in the 1960s, paved the way for the development of today’s nonlinear photonics, the field of research that encompasses all the studies, designs, and implementations of nonlinear optical devices that can be used for the generation, communication, and processing of information. This field has attracted significant attention, partly due to the great potential of exploiting the optical nonlinearities of new or advanced materials to induce new phenomena and achieve new functions. According to Clarivate Web of Science, almost 200,000 papers were published that refer to the topic “nonlinear optic*”. Over 36,000 papers were published in the last four years (2015–2018) with the same keyword, and over 17,000 used the keyword “nonlinear photonic*”. The present Special Issue of Micromachines aims at reviewing the current state of the art and presenting perspectives of further development. Fundamental and applicative aspects are considered, with special attention paid to hot topics that may lead to technological and scientific breakthroughs.
Technology: general issues --- GeSn --- quantum dot --- electric field --- intersubband nonlinear optics --- absorption coefficients --- refractive index changes --- pure state --- cascaded spontaneous parametric down-conversion (SPDC) --- numerical simulation --- transparent conductive oxide --- coherent perfect absorption --- epsilon-near-zero media --- light-with-light modulation --- refractive index change --- non-linear photonics --- optical fibers --- thermal poling --- numerical analysis --- extrinsic chirality --- second harmonic generation --- GaAs nanowires --- plasmonic coating --- second-harmonic generation --- waveguide --- AlGaAs --- optical frequency combs --- quadratic nonlinearity --- optical parametric oscillator --- modulation instability --- stimulated raman scattering --- fiber optics --- amplifiers --- lasers --- optical communication systems --- kerr nonlinearity --- whispering gallery mode --- optical resonators --- stimulated brillouin scattering --- optomechanical oscillations --- nonlinear optics --- stimulated Raman scattering --- microphotonics --- nanophotonics --- nonlinear waveguide --- optical microcavity --- photonics crystals --- nanocrystals --- optical resonances --- harmonic generation --- four-wave mixing --- optical switching --- sub-wavelength gratings --- Mie scattering --- Fano resonances --- guided-mode resonance --- terahertz --- nonlinear optical conversion --- complex optical systems --- adaptive imaging --- single-pixel imaging --- surface nonlinear photonics --- n/a
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This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.
Technology: general issues --- silicon --- yolk−shell structure --- anode --- lithium-ion batteries --- in-plane nanowire --- site-controlled --- epitaxial growth --- germanium --- nanowire-based quantum devices --- HfO2/Si0.7Ge0.3 gate stack --- ozone oxidation --- Si-cap --- interface state density --- passivation --- GOI --- photodetectors --- dark current --- responsivity --- prussian blue nanoparticles --- organotrialkoxysilane --- silica beads --- arsenite --- arsenate --- water decontamination --- vertical gate-all-around (vGAA) --- digital etch --- quasi-atomic-layer etching (q-ALE) --- selective wet etching --- HNO3 concentration --- doping effect --- vertical Gate-all-around (vGAA) --- p+-Ge0.8Si0.2/Ge stack --- dual-selective wet etching --- atomic layer etching (ALE) --- stacked SiGe/Si --- epitaxial grown --- Fin etching --- FinFET --- short-term potentiation (STP) --- long-term potentiation (LTP) --- charge-trap synaptic transistor --- band-to-band tunneling --- pattern recognition --- neural network --- neuromorphic system --- Si-MOS --- quantum dot --- spin qubits --- quantum computing --- GeSn --- CVD --- lasers --- detectors --- transistors --- III-V on Si --- heteroepitaxy --- threading dislocation densities (TDDs) --- anti-phase boundaries (APBs) --- selective epitaxial growth (SEG) --- n/a
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This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.
silicon --- yolk−shell structure --- anode --- lithium-ion batteries --- in-plane nanowire --- site-controlled --- epitaxial growth --- germanium --- nanowire-based quantum devices --- HfO2/Si0.7Ge0.3 gate stack --- ozone oxidation --- Si-cap --- interface state density --- passivation --- GOI --- photodetectors --- dark current --- responsivity --- prussian blue nanoparticles --- organotrialkoxysilane --- silica beads --- arsenite --- arsenate --- water decontamination --- vertical gate-all-around (vGAA) --- digital etch --- quasi-atomic-layer etching (q-ALE) --- selective wet etching --- HNO3 concentration --- doping effect --- vertical Gate-all-around (vGAA) --- p+-Ge0.8Si0.2/Ge stack --- dual-selective wet etching --- atomic layer etching (ALE) --- stacked SiGe/Si --- epitaxial grown --- Fin etching --- FinFET --- short-term potentiation (STP) --- long-term potentiation (LTP) --- charge-trap synaptic transistor --- band-to-band tunneling --- pattern recognition --- neural network --- neuromorphic system --- Si-MOS --- quantum dot --- spin qubits --- quantum computing --- GeSn --- CVD --- lasers --- detectors --- transistors --- III-V on Si --- heteroepitaxy --- threading dislocation densities (TDDs) --- anti-phase boundaries (APBs) --- selective epitaxial growth (SEG) --- n/a
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The first nonlinear optical effect was observed in the 19th century by John Kerr. Nonlinear optics, however, started to grow up only after the invention of the laser, when intense light sources became easily available. The seminal studies by Peter Franken and Nicolaas Bloembergen, in the 1960s, paved the way for the development of today’s nonlinear photonics, the field of research that encompasses all the studies, designs, and implementations of nonlinear optical devices that can be used for the generation, communication, and processing of information. This field has attracted significant attention, partly due to the great potential of exploiting the optical nonlinearities of new or advanced materials to induce new phenomena and achieve new functions. According to Clarivate Web of Science, almost 200,000 papers were published that refer to the topic “nonlinear optic*”. Over 36,000 papers were published in the last four years (2015–2018) with the same keyword, and over 17,000 used the keyword “nonlinear photonic*”. The present Special Issue of Micromachines aims at reviewing the current state of the art and presenting perspectives of further development. Fundamental and applicative aspects are considered, with special attention paid to hot topics that may lead to technological and scientific breakthroughs.
GeSn --- quantum dot --- electric field --- intersubband nonlinear optics --- absorption coefficients --- refractive index changes --- pure state --- cascaded spontaneous parametric down-conversion (SPDC) --- numerical simulation --- transparent conductive oxide --- coherent perfect absorption --- epsilon-near-zero media --- light-with-light modulation --- refractive index change --- non-linear photonics --- optical fibers --- thermal poling --- numerical analysis --- extrinsic chirality --- second harmonic generation --- GaAs nanowires --- plasmonic coating --- second-harmonic generation --- waveguide --- AlGaAs --- optical frequency combs --- quadratic nonlinearity --- optical parametric oscillator --- modulation instability --- stimulated raman scattering --- fiber optics --- amplifiers --- lasers --- optical communication systems --- kerr nonlinearity --- whispering gallery mode --- optical resonators --- stimulated brillouin scattering --- optomechanical oscillations --- nonlinear optics --- stimulated Raman scattering --- microphotonics --- nanophotonics --- nonlinear waveguide --- optical microcavity --- photonics crystals --- nanocrystals --- optical resonances --- harmonic generation --- four-wave mixing --- optical switching --- sub-wavelength gratings --- Mie scattering --- Fano resonances --- guided-mode resonance --- terahertz --- nonlinear optical conversion --- complex optical systems --- adaptive imaging --- single-pixel imaging --- surface nonlinear photonics --- n/a
Choose an application
This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.
Technology: general issues --- silicon --- yolk−shell structure --- anode --- lithium-ion batteries --- in-plane nanowire --- site-controlled --- epitaxial growth --- germanium --- nanowire-based quantum devices --- HfO2/Si0.7Ge0.3 gate stack --- ozone oxidation --- Si-cap --- interface state density --- passivation --- GOI --- photodetectors --- dark current --- responsivity --- prussian blue nanoparticles --- organotrialkoxysilane --- silica beads --- arsenite --- arsenate --- water decontamination --- vertical gate-all-around (vGAA) --- digital etch --- quasi-atomic-layer etching (q-ALE) --- selective wet etching --- HNO3 concentration --- doping effect --- vertical Gate-all-around (vGAA) --- p+-Ge0.8Si0.2/Ge stack --- dual-selective wet etching --- atomic layer etching (ALE) --- stacked SiGe/Si --- epitaxial grown --- Fin etching --- FinFET --- short-term potentiation (STP) --- long-term potentiation (LTP) --- charge-trap synaptic transistor --- band-to-band tunneling --- pattern recognition --- neural network --- neuromorphic system --- Si-MOS --- quantum dot --- spin qubits --- quantum computing --- GeSn --- CVD --- lasers --- detectors --- transistors --- III-V on Si --- heteroepitaxy --- threading dislocation densities (TDDs) --- anti-phase boundaries (APBs) --- selective epitaxial growth (SEG) --- silicon --- yolk−shell structure --- anode --- lithium-ion batteries --- in-plane nanowire --- site-controlled --- epitaxial growth --- germanium --- nanowire-based quantum devices --- HfO2/Si0.7Ge0.3 gate stack --- ozone oxidation --- Si-cap --- interface state density --- passivation --- GOI --- photodetectors --- dark current --- responsivity --- prussian blue nanoparticles --- organotrialkoxysilane --- silica beads --- arsenite --- arsenate --- water decontamination --- vertical gate-all-around (vGAA) --- digital etch --- quasi-atomic-layer etching (q-ALE) --- selective wet etching --- HNO3 concentration --- doping effect --- vertical Gate-all-around (vGAA) --- p+-Ge0.8Si0.2/Ge stack --- dual-selective wet etching --- atomic layer etching (ALE) --- stacked SiGe/Si --- epitaxial grown --- Fin etching --- FinFET --- short-term potentiation (STP) --- long-term potentiation (LTP) --- charge-trap synaptic transistor --- band-to-band tunneling --- pattern recognition --- neural network --- neuromorphic system --- Si-MOS --- quantum dot --- spin qubits --- quantum computing --- GeSn --- CVD --- lasers --- detectors --- transistors --- III-V on Si --- heteroepitaxy --- threading dislocation densities (TDDs) --- anti-phase boundaries (APBs) --- selective epitaxial growth (SEG)
Choose an application
The first nonlinear optical effect was observed in the 19th century by John Kerr. Nonlinear optics, however, started to grow up only after the invention of the laser, when intense light sources became easily available. The seminal studies by Peter Franken and Nicolaas Bloembergen, in the 1960s, paved the way for the development of today’s nonlinear photonics, the field of research that encompasses all the studies, designs, and implementations of nonlinear optical devices that can be used for the generation, communication, and processing of information. This field has attracted significant attention, partly due to the great potential of exploiting the optical nonlinearities of new or advanced materials to induce new phenomena and achieve new functions. According to Clarivate Web of Science, almost 200,000 papers were published that refer to the topic “nonlinear optic*”. Over 36,000 papers were published in the last four years (2015–2018) with the same keyword, and over 17,000 used the keyword “nonlinear photonic*”. The present Special Issue of Micromachines aims at reviewing the current state of the art and presenting perspectives of further development. Fundamental and applicative aspects are considered, with special attention paid to hot topics that may lead to technological and scientific breakthroughs.
Technology: general issues --- GeSn --- quantum dot --- electric field --- intersubband nonlinear optics --- absorption coefficients --- refractive index changes --- pure state --- cascaded spontaneous parametric down-conversion (SPDC) --- numerical simulation --- transparent conductive oxide --- coherent perfect absorption --- epsilon-near-zero media --- light-with-light modulation --- refractive index change --- non-linear photonics --- optical fibers --- thermal poling --- numerical analysis --- extrinsic chirality --- second harmonic generation --- GaAs nanowires --- plasmonic coating --- second-harmonic generation --- waveguide --- AlGaAs --- optical frequency combs --- quadratic nonlinearity --- optical parametric oscillator --- modulation instability --- stimulated raman scattering --- fiber optics --- amplifiers --- lasers --- optical communication systems --- kerr nonlinearity --- whispering gallery mode --- optical resonators --- stimulated brillouin scattering --- optomechanical oscillations --- nonlinear optics --- stimulated Raman scattering --- microphotonics --- nanophotonics --- nonlinear waveguide --- optical microcavity --- photonics crystals --- nanocrystals --- optical resonances --- harmonic generation --- four-wave mixing --- optical switching --- sub-wavelength gratings --- Mie scattering --- Fano resonances --- guided-mode resonance --- terahertz --- nonlinear optical conversion --- complex optical systems --- adaptive imaging --- single-pixel imaging --- surface nonlinear photonics --- GeSn --- quantum dot --- electric field --- intersubband nonlinear optics --- absorption coefficients --- refractive index changes --- pure state --- cascaded spontaneous parametric down-conversion (SPDC) --- numerical simulation --- transparent conductive oxide --- coherent perfect absorption --- epsilon-near-zero media --- light-with-light modulation --- refractive index change --- non-linear photonics --- optical fibers --- thermal poling --- numerical analysis --- extrinsic chirality --- second harmonic generation --- GaAs nanowires --- plasmonic coating --- second-harmonic generation --- waveguide --- AlGaAs --- optical frequency combs --- quadratic nonlinearity --- optical parametric oscillator --- modulation instability --- stimulated raman scattering --- fiber optics --- amplifiers --- lasers --- optical communication systems --- kerr nonlinearity --- whispering gallery mode --- optical resonators --- stimulated brillouin scattering --- optomechanical oscillations --- nonlinear optics --- stimulated Raman scattering --- microphotonics --- nanophotonics --- nonlinear waveguide --- optical microcavity --- photonics crystals --- nanocrystals --- optical resonances --- harmonic generation --- four-wave mixing --- optical switching --- sub-wavelength gratings --- Mie scattering --- Fano resonances --- guided-mode resonance --- terahertz --- nonlinear optical conversion --- complex optical systems --- adaptive imaging --- single-pixel imaging --- surface nonlinear photonics
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