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Book
Heavily doped semiconductors
Authors: ---
Year: 1969 Publisher: New York (N.Y.) : Plenum press,

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Book
Design of Shallow p-type Dopants in ZnO (Presentation)
Authors: --- --- --- ---
Year: 2008 Publisher: [Place of publication not identified] : Washington, D.C. : United States. Dept. of Energy : Oak Ridge, Tenn. : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,

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ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.


Book
Design of shallow p-type dopants in ZnO : preprint
Authors: --- --- ---
Year: 2008 Publisher: Golden, Colo. : National Renewable Energy Laboratory,

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Book
Design of Shallow p-type Dopants in ZnO (Presentation)
Authors: --- --- --- ---
Year: 2008 Publisher: [Place of publication not identified] : Washington, D.C. : United States. Dept. of Energy : Oak Ridge, Tenn. : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,

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Abstract

ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.


Book
Design of shallow p-type dopants in ZnO : preprint
Authors: --- --- ---
Year: 2008 Publisher: Golden, Colo. : National Renewable Energy Laboratory,

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Self-doped conducting polymers
Authors: ---
ISBN: 0470029692 9780470029695 Year: 2007 Publisher: Chichester Wiley


Book
Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
Authors: ---
ISBN: 9401784728 9048128765 9786613003447 1283003449 9048128773 Year: 2010 Publisher: Dordrecht : Springer Netherlands : Imprint: Springer,

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This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications. The text first introduces the reader to the historical background and the major theoretical challenges presented when 4f electron systems are embedded in a semiconductor matrix. It details the preparation of samples for experimental study, either by in-situ growth or ion implantation/annealing, and describes their microscopic structural characterisation. Optical spectroscopy is a dominant theme, complicated by site multiplicity, whether in homogeneous hosts or in heterostructures such as quantum dots, and enlivened by the abiding fascination of the energy transfer mechanism between the host material and the lumophore. Finally, the rapid progress towards prospective optoelectronic and spintronic devices is presented along with several examples.

Ion implantation and beam processing
Authors: ---
ISBN: 0127569804 1306583330 1483220648 Year: 1984 Publisher: Sydney Academic press


Book
Ion implantation techniques
Authors: ---
ISBN: 0387118780 9780387118789 Year: 1982 Volume: 10 Publisher: Berlin Springer

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