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The aim of this special collection of peer-reviewed papers is to present recent progress in crystal growth, in the characterization and control of material properties, as well as in other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors such as group-III nitrides and diamond. The latest research results relevant to wafer production processes, device fabrication technologies and device applications are discussed. These included the latest results in the development and commercialization of advanced devices and circuits used for energy saving, high-vol

Silicon carbide --- Carborundum --- Crystolon --- Silundum --- Carbides --- Silicon compounds --- Electric properties

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The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials.

Silicon carbide --- Carborundum --- Crystolon --- Silundum --- Carbides --- Silicon compounds --- Electric properties

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This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th - September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of 'SiC and related materials and their applications'. This volume is divided into five chapters ranging from 'SiC growth' to 'Biosystems' and thus represents a comprehensive coverage of the field. Review from Book News Inc.: Presentations at this sitting of the biennial

Silicon carbide --- Silicon-carbide thin films --- Carborundum --- Crystolon --- Silundum --- Carbides --- Silicon compounds --- Thin films --- Electric properties

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Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the “materials” aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.

Silicon carbide. --- Carborundum --- Crystolon --- Silundum --- Carbides --- Silicon compounds --- Physical Sciences --- Engineering and Technology --- Materials Science --- Semiconductor --- Electronic Circuits

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This book provides a summary of the current state-of-the-art in SiC and GaN and identify future areas of development. The remarkable improvements in material quality and device performance in the last few years show the promise of these technologies for areas that Si cannot operate because of it's smaller bandgap. We feel that this collection of chapters provides an excellent introduction to the field and is an outstanding reference for those performing research on wide bandgap semiconductors. In this book, we bring together numerous experts in the field to review progress in SiC and GaN ele

Gallium arsenide semiconductors. --- Power semiconductors. --- Silicon carbide. --- Wide gap semiconductors. --- Wide band gap semiconductors --- Wide bandgap semiconductors --- Semiconductors --- Power electronics --- Carborundum --- Crystolon --- Silundum --- Carbides --- Silicon compounds