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Chemical mechanical planarization. --- Semiconductors --- Materials. --- Chemical mechanical polishing --- Grinding and polishing

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Advances in Chemical Mechanical Planarization (CMP) provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The technology has grown to encompass the removal and planarization of multiple metal and dielectric materials and layers both at the device and the metallization levels, using different tools and parameters, requiring improvements in the control of topography and defects. This important book offers a systematic review of fundamentals and advances in the area. Part One covers CMP of dielectric and metal films, with chapters focusing on the use of particular techniques and processes, and on CMP of particular various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. Part Two addresses consumables and process control for improved CMP, and includes chapters on the preparation and characterization of slurry, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes, and approaches for defection characterization, mitigation, and reduction.--

Electrical Engineering --- Electrical & Computer Engineering --- Engineering & Applied Sciences --- Chemical mechanical planarization. --- Nanoelectronics. --- Microelectronics. --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Electronics --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Nanoscale electronics --- Nanoscale molecular electronics --- Nanotechnology --- Chemical mechanical polishing --- Grinding and polishing

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This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

Engineering. --- Manufacturing industries. --- Machines. --- Tools. --- Electronics. --- Microelectronics. --- Tribology. --- Corrosion and anti-corrosives. --- Coatings. --- Manufacturing, Machines, Tools. --- Tribology, Corrosion and Coatings. --- Electronics and Microelectronics, Instrumentation. --- Chemical mechanical planarization. --- Chemical mechanical polishing --- Grinding and polishing --- Manufactures. --- Chemistry, inorganic. --- Manufacturing, Machines, Tools, Processes. --- Inorganic chemistry --- Chemistry --- Inorganic compounds --- Electrical engineering --- Physical sciences --- Manufactured goods --- Manufactured products --- Products --- Products, Manufactured --- Commercial products --- Manufacturing industries --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Electronics --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Surface coatings --- Materials --- Surfaces (Technology) --- Coating processes --- Thin films --- Anti-corrosive paint --- Atmospheric corrosion --- Metal corrosion --- Metals --- Rust --- Rustless coatings --- Chemical inhibitors --- Chemistry, Technical --- Fouling --- Weathering --- Paint --- Protective coatings --- Waterproofing --- Friction --- Corrosion --- Deterioration --- Surfaces