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The recent development of various application systems and platforms, such as 5G, B5G, 6G, and IoT, is based on the advancement of CMOS integrated circuit (IC) technology that enables them to implement high-performance chipsets. In addition to development in the traditional fields of analog and digital integrated circuits, the development of CMOS IC design and application in high-power and high-frequency operations, which was previously thought to be possible only with compound semiconductor technology, is a core technology that drives rapid industrial development. This book aims to highlight advances in all aspects of CMOS integrated circuit design and applications without discriminating between different operating frequencies, output powers, and the analog/digital domains. Specific topics in the book include: Next-generation CMOS circuit design and application; CMOS RF/microwave/millimeter-wave/terahertz-wave integrated circuits and systems; CMOS integrated circuits specially used for wireless or wired systems and applications such as converters, sensors, interfaces, frequency synthesizers/generators/rectifiers, and so on; Algorithm and signal-processing methods to improve the performance of CMOS circuits and systems.

Technology: general issues --- History of engineering & technology --- spin memristor --- mask operation --- memristor switch --- memristor crossbar --- image processing --- CMOS --- voltage-controlled oscillator --- switched-biasing --- flicker noise --- phase noise --- current source --- figure-of-merit --- pixel-level ADC --- current-input ADC --- readout circuit --- microbolometer --- high SNR --- wide dynamic range --- current-reuse --- injection-locked frequency divider --- radar sensor --- wideband --- RF receiver --- blocker --- second-order intermodulation (IM2) --- orthogonal frequency division modulation (OFDM) --- MedRadio --- medical implanted communication service (MICS) --- biomedical device --- biosensors --- LC-VCO --- current-shaping --- 90 nm --- current tail --- varactor --- LC tank --- on-wafer --- vibration energy harvester --- power management circuit --- CMOS rectifier --- dynamic threshold cancellation technique --- high power conversion efficiency --- CMOS circuit --- analog system --- signal processing --- learning algorithm --- artificial neural network --- freeware --- open science --- analog microelectronics design --- long channel transistors --- short channel transistors --- integrated circuit design --- CMOS design --- VLSI --- higher education --- educational innovation --- integrated circuit layout --- complex thinking --- CMOS detector --- concurrent-mode --- differential detector IC --- imaging SNR --- integrated folded-dipole antenna --- sub-terahertz imaging --- voltage responsivity

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In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

random dopant --- drift-diffusion --- variability --- device simulation --- nanodevice --- screening --- Coulomb interaction --- III-V --- TASE --- MOSFETs --- Integration --- nanowire field-effect transistors --- silicon nanomaterials --- charge transport --- one-dimensional multi-subband scattering models --- Kubo–Greenwood formalism --- schrödinger-poisson solvers --- DC and AC characteristic fluctuations --- gate-all-around --- nanowire --- work function fluctuation --- aspect ratio of channel cross-section --- timing fluctuation --- noise margin fluctuation --- power fluctuation --- CMOS circuit --- statistical device simulation --- variability effects --- Monte Carlo --- Schrödinger based quantum corrections --- quantum modeling --- nonequilibrium Green’s function --- nanowire transistor --- electron–phonon interaction --- phonon–phonon interaction --- self-consistent Born approximation --- lowest order approximation --- Padé approximants --- Richardson extrapolation --- ZnO --- field effect transistor --- conduction mechanism --- metal gate --- material properties --- fabrication --- modelling --- nanojunction --- constriction --- quantum electron transport --- quantum confinement --- dimensionality reduction --- stochastic Schrödinger equations --- geometric correlations --- silicon nanowires --- nano-transistors --- quantum transport --- hot electrons --- self-cooling --- nano-cooling --- thermoelectricity --- heat equation --- non-equilibrium Green functions --- power dissipation

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

The recent development of various application systems and platforms, such as 5G, B5G, 6G, and IoT, is based on the advancement of CMOS integrated circuit (IC) technology that enables them to implement high-performance chipsets. In addition to development in the traditional fields of analog and digital integrated circuits, the development of CMOS IC design and application in high-power and high-frequency operations, which was previously thought to be possible only with compound semiconductor technology, is a core technology that drives rapid industrial development. This book aims to highlight advances in all aspects of CMOS integrated circuit design and applications without discriminating between different operating frequencies, output powers, and the analog/digital domains. Specific topics in the book include: Next-generation CMOS circuit design and application; CMOS RF/microwave/millimeter-wave/terahertz-wave integrated circuits and systems; CMOS integrated circuits specially used for wireless or wired systems and applications such as converters, sensors, interfaces, frequency synthesizers/generators/rectifiers, and so on; Algorithm and signal-processing methods to improve the performance of CMOS circuits and systems.

Technology: general issues --- History of engineering & technology --- spin memristor --- mask operation --- memristor switch --- memristor crossbar --- image processing --- CMOS --- voltage-controlled oscillator --- switched-biasing --- flicker noise --- phase noise --- current source --- figure-of-merit --- pixel-level ADC --- current-input ADC --- readout circuit --- microbolometer --- high SNR --- wide dynamic range --- current-reuse --- injection-locked frequency divider --- radar sensor --- wideband --- RF receiver --- blocker --- second-order intermodulation (IM2) --- orthogonal frequency division modulation (OFDM) --- MedRadio --- medical implanted communication service (MICS) --- biomedical device --- biosensors --- LC-VCO --- current-shaping --- 90 nm --- current tail --- varactor --- LC tank --- on-wafer --- vibration energy harvester --- power management circuit --- CMOS rectifier --- dynamic threshold cancellation technique --- high power conversion efficiency --- CMOS circuit --- analog system --- signal processing --- learning algorithm --- artificial neural network --- freeware --- open science --- analog microelectronics design --- long channel transistors --- short channel transistors --- integrated circuit design --- CMOS design --- VLSI --- higher education --- educational innovation --- integrated circuit layout --- complex thinking --- CMOS detector --- concurrent-mode --- differential detector IC --- imaging SNR --- integrated folded-dipole antenna --- sub-terahertz imaging --- voltage responsivity