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Periodical
Journal of ovonic research.
ISSN: 18422403 Year: 2005 Publisher: Bucharest-Magurele, Romania : Virtual Institute of Physics


Book
Phase Change Memory : Device Physics, Reliability and Applications
Author:
ISBN: 3319690531 3319690523 Year: 2018 Publisher: Cham : Springer International Publishing : Imprint: Springer,

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Abstract

This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.

Keywords

Materials science. --- Computers. --- Semiconductors. --- Electronic circuits. --- Optical materials. --- Electronic materials. --- Materials Science. --- Optical and Electronic Materials. --- Circuits and Systems. --- Computation by Abstract Devices. --- Electronic Circuits and Devices. --- Physics. --- Phase change memory. --- C-RAM (Chalcogenide RAM) --- Chalcogenide RAM --- Chalcogenide random access memory --- Memory, Ovonic unified --- Memory, Phase change --- Ovonic unified memory --- PCM memory --- PCME (Phase change memory) --- PCRAM (Phase change RAM) --- Phase change RAM --- Phase change random access memory --- PRAM (Phase change RAM) --- Unified memory, Ovonic --- Random access memory --- Semiconductor storage devices --- Natural philosophy --- Philosophy, Natural --- Physical sciences --- Dynamics --- Systems engineering. --- Computer science. --- Informatics --- Science --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Optics --- Materials --- Design and construction --- Automatic computers --- Automatic data processors --- Computer hardware --- Computing machines (Computers) --- Electronic brains --- Electronic calculating-machines --- Electronic computers --- Hardware, Computer --- Computer systems --- Cybernetics --- Machine theory --- Calculators --- Cyberspace --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Electronics --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Solid state electronics --- Electronic materials


Book
Thermophysical Properties and Measuring Technique of Ge-Sb-Te Alloys for Phase Change Memory
Author:
ISBN: 9811522170 9811522162 Year: 2020 Publisher: Singapore : Springer Singapore : Imprint: Springer,

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Abstract

This book focuses on the thermophysical properties of Ge-Sb-Te alloys, which are the most widely used phase change materials, and the technique for measuring them. Describing the measuring procedure and parameter calibration in detail, it provides readers with an accurate method for determining the thermophysical properties of phase change materials and other related materials. Further, it discusses combining thermal and electrical conductivity data to analyze the conduction mechanism, allowing readers to gain an understanding of phase change materials and PCM industry simulation.

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