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Positrons can be used to study metallic defects. Positron annihilation experiments have been carried out to identify the defects in complex oxides. Positrons have also been used to study the Bose–Einstein condensation (BEC). Ps-BEC can be used to measure antigravity using atomic interferometers. This Special Issue hopes to bring awareness of the various aspects of positron interactions to the larger physics communities. We invite authors to submit articles from all areas of physics.

Research & information: general --- photoionization --- photoabsorption --- photodetachment --- positronium negative ion --- Feshbach and shape resonance states --- correlated exponential wave functions --- complex-coordinate rotation method --- positron-impact excitation --- variational polarized orbital method --- Born approximation --- Coulomb-dipole theory --- positron vs. electron impact ionization --- antihydrogen --- radiative attachment --- antihydrogen ion --- analytical --- hydrogen ion --- solar flares --- coronal mass ejections --- shocks --- positrons --- positronium --- positron annihilation --- pion decay --- autoionization states --- doubly excited states --- Feshbach states --- resonances --- shape resonances --- electron-impact ionization --- hydrogen --- positron-impact ionization --- velocity field --- vortices --- Electron-Positron Scatterings --- atoms and molecules --- cross sections and spin polarization --- theoretical approaches --- Stark effects --- Gailitis resonance --- LENR --- muon catalyzed fusion --- free–free transitions --- opacity

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In recent years, microwave sensing and imaging have acquired an ever-growing importance in several applicative fields, such as non-destructive evaluations in industry and civil engineering, subsurface prospection, security, and biomedical imaging. Indeed, microwave techniques allow, in principle, for information to be obtained directly regarding the physical parameters of the inspected targets (dielectric properties, shape, etc.) by using safe electromagnetic radiations and cost-effective systems. Consequently, a great deal of research activity has recently been devoted to the development of efficient/reliable measurement systems, which are effective data processing algorithms that can be used to solve the underlying electromagnetic inverse scattering problem, and efficient forward solvers to model electromagnetic interactions. Within this framework, this Special Issue aims to provide some insights into recent microwave sensing and imaging systems and techniques.

MW magnetic field --- axial ratio --- polarization --- NV center --- two-dimensional radar imaging --- multiple-input multiple-output (MIMO) radar --- Particle Swarm Optimization (PSO) --- imaging plane calibration algorithm (IPCA) --- microwave tomography --- stroke detection --- DBIM --- linearized inverse scattering --- microwave imaging --- orbital angular momentum --- born approximation --- rytov approximation --- brain stroke --- monitoring --- antenna array --- electromagnetic scattering --- buried objects --- through-wall radar --- inverse scattering --- breast --- multipath --- dynamic range --- software defined radio --- leakage --- frequency-dimension scale --- terahertz --- measurements --- differential imaging --- numerical optimization --- block system inversion --- trade-off analysis --- medical MEMS --- wireless power transfer --- microwave --- thermography --- field illustration --- permittivity --- radar imaging --- target detection --- experimental measurements --- imaging --- wave propagation --- beam summation methods

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Positrons can be used to study metallic defects. Positron annihilation experiments have been carried out to identify the defects in complex oxides. Positrons have also been used to study the Bose–Einstein condensation (BEC). Ps-BEC can be used to measure antigravity using atomic interferometers. This Special Issue hopes to bring awareness of the various aspects of positron interactions to the larger physics communities. We invite authors to submit articles from all areas of physics.

Research & information: general --- photoionization --- photoabsorption --- photodetachment --- positronium negative ion --- Feshbach and shape resonance states --- correlated exponential wave functions --- complex-coordinate rotation method --- positron-impact excitation --- variational polarized orbital method --- Born approximation --- Coulomb-dipole theory --- positron vs. electron impact ionization --- antihydrogen --- radiative attachment --- antihydrogen ion --- analytical --- hydrogen ion --- solar flares --- coronal mass ejections --- shocks --- positrons --- positronium --- positron annihilation --- pion decay --- autoionization states --- doubly excited states --- Feshbach states --- resonances --- shape resonances --- electron-impact ionization --- hydrogen --- positron-impact ionization --- velocity field --- vortices --- Electron-Positron Scatterings --- atoms and molecules --- cross sections and spin polarization --- theoretical approaches --- Stark effects --- Gailitis resonance --- LENR --- muon catalyzed fusion --- free–free transitions --- opacity

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In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

History of engineering & technology --- random dopant --- drift-diffusion --- variability --- device simulation --- nanodevice --- screening --- Coulomb interaction --- III-V --- TASE --- MOSFETs --- Integration --- nanowire field-effect transistors --- silicon nanomaterials --- charge transport --- one-dimensional multi-subband scattering models --- Kubo–Greenwood formalism --- schrödinger-poisson solvers --- DC and AC characteristic fluctuations --- gate-all-around --- nanowire --- work function fluctuation --- aspect ratio of channel cross-section --- timing fluctuation --- noise margin fluctuation --- power fluctuation --- CMOS circuit --- statistical device simulation --- variability effects --- Monte Carlo --- Schrödinger based quantum corrections --- quantum modeling --- nonequilibrium Green’s function --- nanowire transistor --- electron–phonon interaction --- phonon–phonon interaction --- self-consistent Born approximation --- lowest order approximation --- Padé approximants --- Richardson extrapolation --- ZnO --- field effect transistor --- conduction mechanism --- metal gate --- material properties --- fabrication --- modelling --- nanojunction --- constriction --- quantum electron transport --- quantum confinement --- dimensionality reduction --- stochastic Schrödinger equations --- geometric correlations --- silicon nanowires --- nano-transistors --- quantum transport --- hot electrons --- self-cooling --- nano-cooling --- thermoelectricity --- heat equation --- non-equilibrium Green functions --- power dissipation

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• Reference Manager
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In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

History of engineering & technology --- random dopant --- drift-diffusion --- variability --- device simulation --- nanodevice --- screening --- Coulomb interaction --- III-V --- TASE --- MOSFETs --- Integration --- nanowire field-effect transistors --- silicon nanomaterials --- charge transport --- one-dimensional multi-subband scattering models --- Kubo–Greenwood formalism --- schrödinger-poisson solvers --- DC and AC characteristic fluctuations --- gate-all-around --- nanowire --- work function fluctuation --- aspect ratio of channel cross-section --- timing fluctuation --- noise margin fluctuation --- power fluctuation --- CMOS circuit --- statistical device simulation --- variability effects --- Monte Carlo --- Schrödinger based quantum corrections --- quantum modeling --- nonequilibrium Green’s function --- nanowire transistor --- electron–phonon interaction --- phonon–phonon interaction --- self-consistent Born approximation --- lowest order approximation --- Padé approximants --- Richardson extrapolation --- ZnO --- field effect transistor --- conduction mechanism --- metal gate --- material properties --- fabrication --- modelling --- nanojunction --- constriction --- quantum electron transport --- quantum confinement --- dimensionality reduction --- stochastic Schrödinger equations --- geometric correlations --- silicon nanowires --- nano-transistors --- quantum transport --- hot electrons --- self-cooling --- nano-cooling --- thermoelectricity --- heat equation --- non-equilibrium Green functions --- power dissipation