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Silicon --- Passivation. --- -Passivation. --- -Silicium --- Group 14 elements --- Passivation of integrated circuits --- Passivity (Chemistry) --- Protective coatings --- Passivation --- Electronics and optics of solids --- Integrated circuits --- Electric properties --- Electric properties. --- Nonmetals --- -Passivation of integrated circuits --- Silicium --- Silicon - Electric properties --- Integrated circuits - Passivation --- -Passivation

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Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called ""instabilities"". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is

Integrated circuits -- Passivation. --- Integrated circuits. --- Silicon -- Electric properties. --- Silicon --- Integrated circuits --- Electric properties. --- Passivation.

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Electrochemistry. --- Hydrogenation. --- Nuclear fuels. --- Corrosion --- Electrochemical oxidation --- Passivation --- Reaction kinetics

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Protein adsorption to solids, nanomaterials, and biological surfaces is of central interest in many fields, including biomedicine, bioanalytical chemistry, materials engineering, bio-nanotechnology, and basic biomolecular research. Although protein adsorption may sometimes occur with little consequence on molecular structure, interactions with surfaces frequently cause changes in local or global conformations and dynamics, perturbations to secondary structures or tertiary folds, eventually resulting in dramatically altered protein function. Importantly, surfaces may trigger protein misfolding and self-aggregation, or, conversely, promote protein structure formation. The use of nanoscale surfaces to remodel the conformational landscape and the aggregation pathways of amyloidogenic peptides and proteins has been proposed as a promising strategy against several severe human diseases. The rapid growth of applications and technological innovation which is based on or concerned with protein adsorption necessitates renewed efforts to provide molecular-level insights into adsorption-induced protein structural perturbations. In this Special Issue, we gathered the recent findings of experimental and computational investigations that contributed novel insights into protein adsorption with a focus on the structural and dynamic aspects of proteins.

sarcoplasmic reticulum Ca2+-ATPase --- Cu+-ATPase --- phospholipid flippase --- charge displacement --- concentration jump --- solid supported membrane --- conformational transition --- electrogenicity --- ion translocation --- phospholipid flipping --- protein-nanoparticle interactions --- protein NMR --- amyloidogenic proteins --- nitroxide paramagnetic perturbation --- spin label extrinsic probes --- Tempol --- β2-microglobulin --- protein conformation --- protein-surface association --- lipid membranes --- surface-immobilized protein --- EPR spectroscopy --- alpha-synuclein --- amyloid fibrils --- conformational flexibility --- protein adsorption --- protein aggregation --- nano-bio interface --- nanocomposite --- nanoparticles --- supramolecular assembly --- NMR spectroscopy --- gold nanoparticles --- PEGylation --- adsorption --- passivation --- n/a

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This book is composed of 6 papers. The first paper reports a novel technique for the selective emitter formation by controlling the surface morphology of Si wafers. Selective emitter (SE) technology has attracted renewed attention in the Si solar cell industry to achieve an improved conversion efficiency of passivated-emitter rear-contact (PERC) cells. In the second paper, the temperature dependence of the parameters was compared through the PERC of the industrial-scale solar cells. As a result of their analysis, PERC cells showed different temperature dependence for the fill factor loss as temperatures rose. The third paper reports the effects of carrier selective front contact layer and defect state of hydrogenated amorphous silicon passivation layer/n-type crystalline silicon interface. The results demonstrated the effects of band offset determined by band bending at the interface of the passivation layer and carrier selective front contact layer. In addition, the nc-SiOx: H CSFC layer not only reduces parasitic absorption loss but also has a tunneling effect and field-effect passivation. The fourth paper reports excimer laser annealing of hydrogenated amorphous silicon film for TOPCon solar cell application. This paper analyzes the crystallization of a-Si:H via excimer laser annealing (ELA) and compared this process with conventional thermal annealing. The fifth paper reports the contact mechanism between Ag–Al and Si and the change in contact resistance (Rc) by varying the firing profile. Rc was measured by varying the belt speed and peak temperature of the fast-firing furnace. The sixth paper reports a silicon tandem heterojunction solar cell based on a ZnO/Cu2O subcell and a c-Si bottom subcell using electro-optical numerical modeling. The buffer layer affinity and mobility together with a low conduction band offset for the heterojunction are discussed, as well as spectral properties of the device model.

History of engineering & technology --- fill factor loss analysis --- double-diode model --- PERC --- temperature dependence --- recombination current density --- parasitic resistance --- carrier selective contact --- rear emitter heterojunction --- passivation --- crystallinity --- thermal annealing --- excimer laser annealing --- amorphous hydrogenated silicon film --- metallization --- contact formation --- Ag/Al paste --- p+ emitter --- N-type bifacial solar cells --- silicon tandem heterojunction solar cell --- N-doped Cu2O absorber layer --- Al:ZnO (AZO) --- numerical electro-optical modeling --- scanning electron microscopy (SEM) --- atomic force microscopy (AFM) --- X-ray diffraction (XRD) --- spectroscopic ellipsometry (SE) --- Fourier-transform infrared (FTIR) spectroscopy --- degradation degree --- failure rate --- selective emitter --- surface morphology --- doping process --- solar cell