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This book focuses on the development of design techniques and methodologies for 60-GHz and E-band power amplifiers and transmitters at device, circuit and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and efficiency of power amplifiers in a compact silicon area. Five state-of-the-art 60-GHz and E-band designs with measured results are demonstrated to prove the effectiveness of the design concepts and hands-on methodologies presented. This book serves as a valuable reference for circuit designers to develop millimeter-wave building blocks for future 5G applications.

Engineering. --- Circuits and Systems. --- Electronic Circuits and Devices. --- Electronics and Microelectronics, Instrumentation. --- Electronics. --- Systems engineering. --- Ingénierie --- Electronique --- Ingénierie des systèmes --- Metal oxide semiconductors, Complementary. --- Millimeter wave communication systems. --- Power amplifiers. --- Electrical & Computer Engineering --- Engineering & Applied Sciences --- Electrical Engineering --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- Communication systems, Millimeter wave --- Telecommunication systems, Millimeter wave --- Electronic circuits. --- Microelectronics. --- Amplifiers (Electronics) --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits --- Microwave communication systems --- Telecommunication systems --- Electrical engineering --- Physical sciences --- Engineering systems --- System engineering --- Engineering --- Industrial engineering --- System analysis --- Design and construction --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Electronics --- Microtechnology --- Semiconductors --- Miniature electronic equipment --- Electron-tube circuits --- Electric circuits --- Electron tubes

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The rapid growth of mobile data and the u se of smart phones are making unprecedented challe nges for wireless service providers to overcomea g lobal bandwidth shortage. Millimeter-wave (mm-Wave ) technology is widely considered as one of the ke y technologies that will continue to serve the con sumer demand for increased wireless data capacity. ¨Meanwhile, the advanced CMOS can now well operate ¨in mm-Wave bands, permitting the integration of a ¨full transceiver in a low-cost, high-yield techno logy. However, the design of a mm-Wave¨ transceiver in advanced CMOS still poses many chal lenges at device, circuit and architecture levels. ¨In addition to generic difficulties, such as high -frequency operation and low active gain, mm-Wave¨ designers must deal with issues like low breakdown¨voltage, high interconnect loss, unwanted mutual¨ coupling, poor device matching, inaccurate PDK hig h-frequency models, strict design rules, long EM-s imulation time, etc. At transmitter side, all thes e critical issues limit the output power and effic iency, prolong the design time and make it difficu lt to guarantee the success of tape-out. This doctoral work focuses on realizing compact¨ CMOS mm-Wave transmitters (TXs) and power amplifie rs (PAs) towards more output power, higher efficie ncy and broader bandwidth. To address design chall enges at mm-Wave, novel design techniques have bee n proposed in this thesis, such as optimal transis tor layout, enhanced amplifier stage and broadband ¨power combiner. Design methodologies will be pres ented to deal with the long EM-simulation time and ¨strict design rules. In addition, detailed design ¨issues, such ascommon-mode stability and magnetic ¨mutual coupling, will also be covered in the thes is. All the proposed design techniques will be app lied to five prior-art designs that are implemente d and measured in the context of this doctoral wor k. These designs include (1) a 60-GHz outphasing T X which is the first application and implementatio n of outphasing techniqueat mm-Wave; (2) a 60-GHz¨ dual-mode Class AB PA which is the first dual-mode ¨PA presented at 60 GHz and achieves a recorded PAE of 30\%; (3) an E-band direct-conversion TX that ¨shows measured 4.5-Gb/s 64-QAM and 14-Gb/s 16-QAM ; (4) a broadband 4-way E-band PA which is the fir st reported silicon-based PA achieving uniform gai n, output power and PAE across complete E-band and ¨(5) a 4-way E-band PA based on neutralized bootst rappedamplifier topology that shows highest report ed power gain per stage.

Theses