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This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
Metal oxide semiconductors, Complementary --- CMOS (Electronics) --- Complementary metal oxide semiconductors --- Semiconductors, Complementary metal oxide --- Digital electronics --- Logic circuits --- Transistor-transistor logic circuits --- Materials. --- Semiconductors. --- Electronic circuits. --- Nanotechnology. --- Circuits and Systems. --- Nanotechnology and Microengineering. --- Molecular technology --- Nanoscale technology --- High technology --- Electron-tube circuits --- Electric circuits --- Electron tubes --- Electronics --- Crystalline semiconductors --- Semi-conductors --- Semiconducting materials --- Semiconductor devices --- Crystals --- Electrical engineering --- Solid state electronics --- Materials
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This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.
Technology: general issues --- silicon --- yolk−shell structure --- anode --- lithium-ion batteries --- in-plane nanowire --- site-controlled --- epitaxial growth --- germanium --- nanowire-based quantum devices --- HfO2/Si0.7Ge0.3 gate stack --- ozone oxidation --- Si-cap --- interface state density --- passivation --- GOI --- photodetectors --- dark current --- responsivity --- prussian blue nanoparticles --- organotrialkoxysilane --- silica beads --- arsenite --- arsenate --- water decontamination --- vertical gate-all-around (vGAA) --- digital etch --- quasi-atomic-layer etching (q-ALE) --- selective wet etching --- HNO3 concentration --- doping effect --- vertical Gate-all-around (vGAA) --- p+-Ge0.8Si0.2/Ge stack --- dual-selective wet etching --- atomic layer etching (ALE) --- stacked SiGe/Si --- epitaxial grown --- Fin etching --- FinFET --- short-term potentiation (STP) --- long-term potentiation (LTP) --- charge-trap synaptic transistor --- band-to-band tunneling --- pattern recognition --- neural network --- neuromorphic system --- Si-MOS --- quantum dot --- spin qubits --- quantum computing --- GeSn --- CVD --- lasers --- detectors --- transistors --- III-V on Si --- heteroepitaxy --- threading dislocation densities (TDDs) --- anti-phase boundaries (APBs) --- selective epitaxial growth (SEG) --- n/a
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This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.
silicon --- yolk−shell structure --- anode --- lithium-ion batteries --- in-plane nanowire --- site-controlled --- epitaxial growth --- germanium --- nanowire-based quantum devices --- HfO2/Si0.7Ge0.3 gate stack --- ozone oxidation --- Si-cap --- interface state density --- passivation --- GOI --- photodetectors --- dark current --- responsivity --- prussian blue nanoparticles --- organotrialkoxysilane --- silica beads --- arsenite --- arsenate --- water decontamination --- vertical gate-all-around (vGAA) --- digital etch --- quasi-atomic-layer etching (q-ALE) --- selective wet etching --- HNO3 concentration --- doping effect --- vertical Gate-all-around (vGAA) --- p+-Ge0.8Si0.2/Ge stack --- dual-selective wet etching --- atomic layer etching (ALE) --- stacked SiGe/Si --- epitaxial grown --- Fin etching --- FinFET --- short-term potentiation (STP) --- long-term potentiation (LTP) --- charge-trap synaptic transistor --- band-to-band tunneling --- pattern recognition --- neural network --- neuromorphic system --- Si-MOS --- quantum dot --- spin qubits --- quantum computing --- GeSn --- CVD --- lasers --- detectors --- transistors --- III-V on Si --- heteroepitaxy --- threading dislocation densities (TDDs) --- anti-phase boundaries (APBs) --- selective epitaxial growth (SEG) --- n/a
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This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.
Technology: general issues --- silicon --- yolk−shell structure --- anode --- lithium-ion batteries --- in-plane nanowire --- site-controlled --- epitaxial growth --- germanium --- nanowire-based quantum devices --- HfO2/Si0.7Ge0.3 gate stack --- ozone oxidation --- Si-cap --- interface state density --- passivation --- GOI --- photodetectors --- dark current --- responsivity --- prussian blue nanoparticles --- organotrialkoxysilane --- silica beads --- arsenite --- arsenate --- water decontamination --- vertical gate-all-around (vGAA) --- digital etch --- quasi-atomic-layer etching (q-ALE) --- selective wet etching --- HNO3 concentration --- doping effect --- vertical Gate-all-around (vGAA) --- p+-Ge0.8Si0.2/Ge stack --- dual-selective wet etching --- atomic layer etching (ALE) --- stacked SiGe/Si --- epitaxial grown --- Fin etching --- FinFET --- short-term potentiation (STP) --- long-term potentiation (LTP) --- charge-trap synaptic transistor --- band-to-band tunneling --- pattern recognition --- neural network --- neuromorphic system --- Si-MOS --- quantum dot --- spin qubits --- quantum computing --- GeSn --- CVD --- lasers --- detectors --- transistors --- III-V on Si --- heteroepitaxy --- threading dislocation densities (TDDs) --- anti-phase boundaries (APBs) --- selective epitaxial growth (SEG) --- silicon --- yolk−shell structure --- anode --- lithium-ion batteries --- in-plane nanowire --- site-controlled --- epitaxial growth --- germanium --- nanowire-based quantum devices --- HfO2/Si0.7Ge0.3 gate stack --- ozone oxidation --- Si-cap --- interface state density --- passivation --- GOI --- photodetectors --- dark current --- responsivity --- prussian blue nanoparticles --- organotrialkoxysilane --- silica beads --- arsenite --- arsenate --- water decontamination --- vertical gate-all-around (vGAA) --- digital etch --- quasi-atomic-layer etching (q-ALE) --- selective wet etching --- HNO3 concentration --- doping effect --- vertical Gate-all-around (vGAA) --- p+-Ge0.8Si0.2/Ge stack --- dual-selective wet etching --- atomic layer etching (ALE) --- stacked SiGe/Si --- epitaxial grown --- Fin etching --- FinFET --- short-term potentiation (STP) --- long-term potentiation (LTP) --- charge-trap synaptic transistor --- band-to-band tunneling --- pattern recognition --- neural network --- neuromorphic system --- Si-MOS --- quantum dot --- spin qubits --- quantum computing --- GeSn --- CVD --- lasers --- detectors --- transistors --- III-V on Si --- heteroepitaxy --- threading dislocation densities (TDDs) --- anti-phase boundaries (APBs) --- selective epitaxial growth (SEG)
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