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Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor
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Authors:
Sun, W. D.
---
U.S. Army Research Laboratory.
Year: 1999 Publisher: Adelphi, MD : Army Research Laboratory,
Year: 1999 Publisher: Adelphi, MD : Army Research Laboratory,
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Abstract
Keywords
Field-effect transistors. --- Quantum wells. --- Photoluminescence.
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