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A study of deep levels in high-purity germanium
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Year: 1987 Publisher: Brussel

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A study of deep levels in high-purity germanium
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Year: 1987 Publisher: Brussel Koninklijke academie voor wetenschappen, letteren en schone kunsten van België

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Extended defects in germanium : fundamental and technological aspects
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ISBN: 3540856110 3642099211 9786611950958 1281950955 3540856145 Year: 2009 Publisher: Berlin ; Heidelberg : Springer-Verlag,

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The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.


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Radiation Effects in Advanced Semiconductor Materials and Devices
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ISBN: 9783642077784 Year: 2002 Publisher: Berlin Springer

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WOLTE 2 : proceedings of the 2nd European workshop on low temperature electronics.
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Year: 1996 Publisher: Les Ulis Ed. de physique

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Proceedings third ELEN workshop
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Year: 1996 Publisher: Leuven IMEC

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WOLTE 2. Proceedings of the Second European Workshop on low-temperature electronics
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ISBN: 2868832768 Year: 1996 Publisher: Orsay : Editions de physique,

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Radiation effects in advanced semiconductor materials and devices
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ISBN: 3540433937 3642077781 3662049740 Year: 2002 Publisher: Berlin ; New York, NY : Springer,

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In the modern semiconductor industry, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on increasing numbers of processing steps that involve an aggressive environment where inadvertant radiation damage can occur. This book is both aimed at post-graduate researchers seeking an overview of the field, and will also be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.

Germanium-based technologies
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ISBN: 9780080449531 0080449530 9786611003470 1281003476 008047490X 9780080474908 9781281003478 6611003479 Year: 2007 Publisher: Amsterdam London Elsevier

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Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics a

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