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Ferroelectric Thin Films : Basic Properties and Device Physics for Memory Applications
Authors: ---
ISBN: 9783540241638 3540241639 9786611390204 1281390208 3540314792 Year: 2005 Publisher: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer,

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Abstract

Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.

Keywords

Thin films. --- Ferroelectricity. --- Couches minces --- Ferroélectricité --- Physics. --- Crystallography. --- Magnetism. --- Electronics. --- Materials. --- Magnetism, Magnetic Materials. --- Electronics and Microelectronics, Instrumentation. --- Metallic Materials. --- Physics and Applied Physics in Engineering. --- Thin films --- Ferroelectricity --- Electricity --- Computer Storage Devices --- Electronics --- Computer Peripherals --- Physics --- Electromagnetic Phenomena --- Natural Science Disciplines --- Physical Phenomena --- Computers --- Phenomena and Processes --- Disciplines and Occupations --- Computer Systems --- Computing Methodologies --- Information Science --- Materials Science --- Electricity & Magnetism --- Chemical & Materials Engineering --- Physical Sciences & Mathematics --- Engineering & Applied Sciences --- Calculators, Programmable --- Computer Hardware --- Computers, Digital --- Hardware, Computer --- Calculator, Programmable --- Computer --- Computer, Digital --- Digital Computer --- Digital Computers --- Programmable Calculator --- Programmable Calculators --- Information Sciences --- Science, Information --- Sciences, Information --- High Performance Computing --- Methodologies, Computing --- Computing Methodology --- Computing, High Performance --- Methodology, Computing --- Performance Computing, High --- Organization, Computer Systems --- Computer Architecture --- Computer Systems Development --- Computer Systems Evaluation --- Computer Systems Organization --- Real-Time Systems --- Architecture, Computer --- Architectures, Computer --- Computer Architectures --- Computer System --- Computer Systems Evaluations --- Development, Computer Systems --- Evaluation, Computer Systems --- Evaluations, Computer Systems --- Real Time Systems --- Real-Time System --- System, Computer --- System, Real-Time --- Systems, Computer --- Systems, Real-Time --- Physical Phenomenon --- Physical Process --- Physical Concepts --- Physical Processes --- Concept, Physical --- Concepts, Physical --- Phenomena, Physical --- Phenomenon, Physical --- Physical Concept --- Process, Physical --- Processes, Physical --- Natural Sciences --- Physical Sciences --- Discipline, Natural Science --- Disciplines, Natural Science --- Natural Science --- Natural Science Discipline --- Physical Science --- Science, Natural --- Science, Physical --- Sciences, Natural --- Sciences, Physical --- Electrical Phenomena --- Electrical Phenomenon --- Electromagnetic Phenomenon --- Electromagnetics --- Electrical Concepts --- Electromagnetic Concepts --- Concept, Electrical --- Concept, Electromagnetic --- Concepts, Electrical --- Concepts, Electromagnetic --- Electrical Concept --- Electromagnetic Concept --- Electromagnetic Phenomenas --- Phenomena, Electrical --- Phenomena, Electromagnetic --- Phenomenon, Electrical --- Phenomenon, Electromagnetic --- Physic --- Electronic --- Computer Memory Systems --- Mass Storage Devices --- Computer Memory System --- Computer Storage Device --- Device, Computer Storage --- Device, Mass Storage --- Devices, Computer Storage --- Devices, Mass Storage --- Mass Storage Device --- Memory System, Computer --- Memory Systems, Computer --- System, Computer Memory --- Systems, Computer Memory --- Leptology --- Ferroelectric effect --- Seignette-electricity --- Natural philosophy --- Philosophy, Natural --- Films, Thin --- Solid film --- Engineering --- Engineering materials --- Industrial materials --- Materials --- Peripheral Devices, Computer --- Peripheral Equipment, Computer --- Computer Peripheral --- Computer Peripheral Device --- Computer Peripheral Devices --- Computer Peripheral Equipment --- Computer Peripheral Equipments --- Device, Computer Peripheral --- Devices, Computer Peripheral --- Equipment, Computer Peripheral --- Equipments, Computer Peripheral --- Peripheral Device, Computer --- Peripheral Equipments, Computer --- Peripheral, Computer --- Peripherals, Computer --- Magnetic materials. --- Engineering. --- Microelectronics. --- Metals. --- Engineering, general. --- Crystallography and Scattering Methods. --- Physical sciences --- Mineralogy --- Electrical engineering --- Mathematical physics --- Magnetics --- Engineering design --- Manufacturing processes --- Construction --- Industrial arts --- Technology --- Polarization (Electricity) --- Solid state electronics --- Solids --- Surfaces (Technology) --- Coatings --- Thick films --- Metallic elements --- Chemical elements --- Ores --- Metallurgy --- Microminiature electronic equipment --- Microminiaturization (Electronics) --- Microtechnology --- Semiconductors --- Miniature electronic equipment


Digital
Ferroelectric Thin Films : Basic Properties and Device Physics for Memory Applications
Authors: ---
ISBN: 9783540314790 Year: 2005 Publisher: Berlin Heidelberg Springer-Verlag GmbH

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Book
Ferroelectric Thin Films : Basic Properties and Device Physics for Memory Applications
Authors: --- ---
ISBN: 9783540314790 Year: 2005 Publisher: Berlin Heidelberg Springer Berlin Heidelberg

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Abstract

Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.


Book
Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications
Authors: --- --- --- ---
ISBN: 9402408398 940240841X Year: 2016 Publisher: Dordrecht : Springer Netherlands : Imprint: Springer,

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This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.


Book
Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications
Authors: --- --- --- ---
ISBN: 9811512124 9811512116 Year: 2020 Publisher: Singapore : Springer Singapore : Imprint: Springer,

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Abstract

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films. .


Book
Ferroelectric-Gate Field Effect Transistor Memories
Authors: --- --- --- --- --- et al.
ISBN: 9789811512124 Year: 2020 Publisher: Singapore Springer Singapore :Imprint: Springer


Digital
Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications
Authors: --- --- --- ---
ISBN: 9789402408416 Year: 2016 Publisher: Dordrecht Springer Netherlands

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Abstract

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.


Digital
Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications
Authors: --- --- --- ---
ISBN: 9789811512124 Year: 2020 Publisher: Singapore Springer Singapore, Imprint: Springer

Loading...
Export citation

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Abstract

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films. .

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