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This dissertation by Anders Lundskog explores the controlled growth of hexagonal GaN pyramids and InGaN quantum dots (QDs) using hot-wall metal organic chemical vapor deposition (MOCVD). The research focuses on enhancing the luminous efficiency of LEDs, addressing dislocation issues in planar heteroepitaxial structures. By embedding InGaN QDs in GaN matrices, the study demonstrates the potential for dislocation-free structures, leading to improved optical properties and novel light sources, such as single photon emitters for quantum applications. The work is mainly experimental, employing techniques like SEM, μPL, and STEM. The dissertation also discusses the impact of growth parameters on pyramid morphology and QD emission energy, contributing to advancements in semiconductor materials and LED technology.

Quantum dots. --- Chemical vapor deposition. --- Quantum dots --- Chemical vapor deposition